Non-halogen lead-doped perovskite thin film and preparation method and application thereof

A perovskite and perovskite precursor technology, applied in the field of solar cells, can solve problems such as hindering carrier transport recombination, affecting battery performance, and obvious grain boundaries, so as to slow down the nucleation and growth rate and improve device efficiency , the effect of grain boundary reduction

Active Publication Date: 2020-02-07
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the rapid crystallization process during the annealing process of this method will lead to the formation of crystal nuclei too quickly, so that the final grains are small and the grain boundaries are too obvious, which in turn leads to the formation of a large number of defect states in the perovskite layer and at the surface, hindering Transport of carriers and cause inevitable recombination, which affects battery performance
In addition, too many grain boundaries easily provide space for water and oxygen activities, leading to the decomposition of perovskite materials.

Method used

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  • Non-halogen lead-doped perovskite thin film and preparation method and application thereof
  • Non-halogen lead-doped perovskite thin film and preparation method and application thereof
  • Non-halogen lead-doped perovskite thin film and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0031] (1) Clean the FTO ultrasonically twice with detergent, ethanol and acetone, each time for 15 min. Then put it into an oven to dry to remove residual moisture and organic solvent;

[0032] (2) Methylammonium iodide (MAI) and lead chloride (PbCl 2 ) was dissolved in a mixed solvent of γ-butyrolactone (GBL) and dimethyl sulfoxide (DMSO) with a volume ratio of 7:3 at a molar ratio of 3:1, and stirred for 3 h to obtain a 30wt% perovskite precursor solution. In addition, prepare 20 mg / mL lead oxalate (PbC 2 o 4 ) of hydrochloric acid solution, shake until completely dissolved;

[0033] (3) Mix the perovskite precursor solution and the lead oxalate solution at a volume ratio of 20:1 to obtain a mixed solution. Then mix the mixed solution with the perovskite precursor solution according to the volume ratio of 20:3, and finally obtain the perovskite precursor solution with lead oxalate as an additive;

[0034] (4) Pour an ice-water mixture of titanium dioxide on the FTO su...

Embodiment 2

[0039] (1) Clean the FTO ultrasonically twice with detergent, ethanol and acetone, each time for 15 min. Then put it into an oven to dry to remove residual moisture and organic solvent;

[0040] (2) Combine MAI with PbCl 2 Dissolve in the mixed solvent of GBL and DMSO with a volume ratio of 7:3 at a molar ratio of 3:1, and stir for 3 hours to obtain a 30wt% perovskite precursor solution. Alternatively, prepare 20 mg / mL lead oxalate (PbC 2 o 4 ) of hydrochloric acid solution, shake until completely dissolved;

[0041] (3) Mix the perovskite precursor solution and the lead oxalate solution at a volume ratio of 20:1 to obtain a mixed solution. Then the mixed solution is mixed with the perovskite precursor solution according to the volume ratio of 20:5, and finally the perovskite precursor solution with lead oxalate as an additive is obtained;

[0042] (4) Pour an ice-water mixture of titanium dioxide on the FTO substrate, put it in a 75°C oven for 1 hour, then blow dry the s...

Embodiment 3

[0047] (1) Clean the FTO ultrasonically twice with detergent, ethanol and acetone, each time for 15 min. Then put it into an oven to dry to remove residual moisture and organic solvent;

[0048] (2) Combine MAI with PbCl 2 It was dissolved in a mixed solvent of GBL and DMSO with a volume ratio of 7:3 at a molar ratio of 3:1, and stirred for 3 h to obtain a 30wt% perovskite precursor solution. Alternatively, prepare 20 mg / mL lead oxalate (PbC 2 o 4 ) of hydrochloric acid solution, shake until completely dissolved;

[0049] (3) Mix the perovskite precursor solution and the lead oxalate solution at a volume ratio of 20:1 to obtain a mixed solution. Then the mixed solution is mixed with the perovskite precursor solution according to the volume ratio of 20:5, and finally the perovskite precursor solution with lead oxalate as an additive is obtained;

[0050] (4) Pour an ice-water mixture of titanium dioxide on the FTO substrate, put it in a 75°C oven for 1 hour, then blow dry ...

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Abstract

The invention belongs to the field of solar cells, and particularly discloses a non-halogen lead-doped perovskite thin film and a preparation method and application thereof. The perovskite thin film is prepared by adding lead oxalate into a perovskite precursor solution. According to the preparation method, a trace amount of lead oxalate is added into a perovskite precursor solution, and a perovskite thin film layer in a solar cell is obtained through spin coating by a low-temperature solution treatment method, so that the crystallization process of the perovskite material is slowed down, anda thin film with larger crystal grains and fewer crystal boundaries is obtained. The preparation process is simple, and the production cost is saved. The crystallization condition of the perovskite thin film can be well improved, defects are reduced, carrier recombination is inhibited, and the performance of the device is improved. Meanwhile, an indoor perovskite solar cell obtained by the methodhas a great prospect in the aspect of indoor low-illumination power supply in the future.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a perovskite solar cell, an indoor perovskite solar cell and a preparation method thereof, in particular to a method for regulating perovskite crystallization by using non-halogen lead. Background technique [0002] In the past decade, perovskite materials have received great attention as a research hotspot in the field of energy, while the efficiency of perovskite solar cells has rapidly increased from 3.8% in 2009 to 25.2% in 2019. These rapid developments are all due to the double carrier transport performance, high light absorption, long carrier life and solution processability of perovskite materials, and the device manufacturing cost is low, which has great advantages in future commercialization. [0003] At present, the commonly used methods for preparing perovskite solar cells include spin coating, chemical vapor deposition, inkjet printing, and thermal evaporation. Although ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K71/40H10K30/151H10K2102/00Y02E10/549
Inventor 王照奎廖良生董翀
Owner SUZHOU UNIV
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