134results about How to "Few grain boundaries" patented technology

The invention discloses a metal-ion-doped perovskite thin film, a preparation method and an application therefor. The preparation method for the metal-ion-doped perovskite thin film comprises the specific steps of dissolving metal powder into an HX solution to form the HX solution containing metal ions, wherein X is Cl, Br or I; enabling the HX solution containing metal ions to be mixed with an methylamine solution, and drying to prepare metal-ion-doped MAX powder; enabling the metal-ion-doped MAX powder to be mixed with the a lead salt, and dissolving the mixture into dimethylformamide to prepare a perovskite precursor liquid, wherein the lead salt is PbBr<2>, PbI<2> or PbCl<2>; and preparing the metal-ion-doped perovskite thin film from the perovskite precursor liquid through a rotary coating process. The metal-ion-doped perovskite thin film is prepared through a liquid phase one-step method; the cover degree of the prepared perovskite thin film is greatly improved; and the requirement of a perovskite solar cell on the high quality of the perovskite thin film can be fully satisfied.

The invention discloses a preparation method of a three-dimensional dendritic TiO2 array with rapid electronic transmission performance. The preparation method comprises the steps as follows: 1), a one-dimensional nanometer TiO2 rod array with rapid electronic transmission performance is grown on the surface of a conductive substrate deposited with a TiO2 crystal seed layer with a hydrothermal method; 2), the one-dimensional nanometer TiO2 rod array obtained in the step 1) is subjected to surface treatment, and a three-dimensional dendritic structure is grown on a no-seed layer in an epitaxial manner with a water-bath method; and 3), an obtained sample with the three-dimensional dendritic structure is subjected to oxygen plasma cleaning and oxygen atmosphere sintering treatment, so that a three-dimensional dendritic TiO2 array nano-structure is obtained. According to the preparation method, the technological operation is simple, the cost is low, the controllability is high, grain boundaries and defects of the obtained TiO2 array are few, high electrical transmission rate and large specific surface area are provided, the TiO2 array can be used for a photo-anode of an photoelectric device, the device performance is improved greatly, and a good application prospect is provided.

The invention relates to the field of microelectronic packaging material or ceramic material, in particular to a method for continuous low temperature sintering of high thermal coefficient AIN ceramics and a product thereof; the AIN ceramics is prepared from AIN powder and additive by sintering; the AIN powder has an average grain diameter of 1.0-2.0mum and an oxygen content of being equal to or less than 1.0%, the additive is composed of nano AIN powder, sintering auxiliary agent and rare earth metal oxide; wherein the sintering auxiliary agent is selected from CaCO3 and LiCO3, the rare earth metal oxide is selected from Y2O3, Sm2O3, Dy2O3, Nd2O3, Ho2O3 and Er2O3, wherein the content of the sintering auxiliary agent is 1-2wt%, the use amount of the nano AIN powder accounts for 5-10% of the total weight, the content of the rare earth oxide is 1-3wt%. The invention has the beneficial effects that superfine aluminum nitride powder and sintering aid are used to improve sintering property of the aluminium nitride ceramics, lower sintering temperature of the AIN ceramics, so that densification sintering can be carried out with the range of 1450-1600 DEG C and thermal conductivity of the AIN ceramics can reach 170-220W/m.K; in addition, the invention has the advantages of capability of sintering in a continuous hydrogen and nitrogen atmosphere furnace, improved production efficiency, low energy consumption, large output and low cost.

The invention provides a preparation method of lithium yttrium halide and application thereof in a solid electrolyte and a battery. The preparation method of the lithium yttrium halide comprises the following steps: (1) supplying yttrium halide salt and lithium salt to a ball mill tank for mechanical synthesis; (2) annealing a mechanically synthesized product under the protection of inert gas to obtain the lithium yttrium halide with a chemical formula of Li3YAxB6-x, wherein A is Cl<-> and/or Br<->, and B is selected from at least one of I<->, F<->, BF<4->, PF<6->, BOB<->, TFSI<-> and FSI<->;x is more than 0 and less than or equal to 6. The method can be carried out under normal pressure, and the raw materials are low in cost; the prepared Li3YCl6 is high in thermal stability and high incrystallinity, and has relatively high electrical conductivity at normal temperature.

The invention provides a solid electrolyte membrane and a preparation method and a secondary cell and a preparation method thereof, which relate to the technical field of the secondary cell. The preparation method of the solid electrolyte membrane comprises the following steps: laser is used for heating a dry powder layer of a solid electrolyte substance, after the dry powder layer of the solid electrolyte substance is fusion and solidified, the solid electrolyte membrane is obtained. The method can alleviate the technical problem that a binder is added while the solid electrolyte is prepared,the apertures are multiple, and the electrical property of the cell is decreased in the prior art, and a purpose of increasing the electricity performance of the cell can be achieved.

The invention discloses an efficient and stable perovskite solar battery, which is formed by transparent conductive glass, an electron transfer layer, a mesoporous layer, a perovskite layer, a hole transfer layer and a back electrode which are laminated in sequence. During preparation of the perovskite layer, a certain quantity of terephthalic acid (TPA) additives are added to a precursor liquid of a traditional organic and inorganic metal halide perovskite, so that growth kinetics of a perovskite crystal changes, an obtained perovskite crystal boundary is filled up, and thus joined large-sized perovskite crystal particles are formed. According to the perovskite solar battery prepared by the method, compared with an additive-free perovskite solar battery, annihilation of photoproduction excitons at the crystal boundary is reduced, so that the photoelectric conversion efficiency is obviously increased. In addition, the perovskite crystal boundary is reduced, moisture, oxygen and the like are difficult to enter from the crystal boundary to corrode the perovskite layer, thereby enabling the stability of the whole battery to be obviously better.

A fully inorganic perovskite solar cell and a preparation method thereof are provided. The method comprises the steps of: 1. adding CsI into DMSO, dissolving completely, adding isopropanol, precipitating, filtering, and vacuum drying to obtain treated CsI; 2, dissolving PbI2 (DMSO), PbBr2 (DMSO) and treated CsI, according to the molar ratio of the corresponding elements of CsPbI2Br, to prepare a precursor solution; 3, preparing an electron transport layer on the substrate; spin-coating the solution on the surface of the electron transport layer, and performing annealing at the temperature of 30-40 DEG C and 120-200 DEG C for 2-5 min, so that thin film is crystallized to obtain a fully inorganic perovskite light absorbing lay; 4, sequentially preparing a hole transport layer and a gold electrode layer on the surface of the absorption layer to obtain a fully inorganic perovskite solar cell. The perovskite battery has good stability of water and oxygen, good film-forming property, simplemethod and strong repeatability.

The invention provides a quaternary positive electrode material precursor. The quaternary positive electrode material precursor is of a core-shell structure, the material formula of a core is Ni<1-x-y-z>Co<x>Al<y>Mn<z>CO3, the material formula of the core is Ni<1-r-s-t>Co<r>Al<s>Mn<t>(OH)2, wherein (1-x-y-z) is a numeral value between 0.80 and 0.96, x is larger than 0, y is a numeral value between0.01 and 0.10, z is a numeral value between 0.01 and 0.10, (1-r-s-t) is a numeral value between 0.34 and 0.70, r is larger than 0, s is a numeral value between 0.20 and 0.40, and t a numeral value between 0.20 and 0.40. The quaternary positive electrode material is stable in structure, high in safety, long in cycle lifetime and good in thermal stability.

The invention discloses a low-temperature polycrystalline silicon film, a preparation method thereof, a thin film transistor and a display panel. The preparation method of the low-temperature polycrystalline silicon film comprises the steps that multiple non-crystalline silicon layers having different membranous parameters deposit, wherein the membranous parameters include refractive index parameters and/or heat conductivity coefficient parameters; dehydrogenation treatment is conducted on the multiple non-crystalline silicon layers having different membranous parameters; crystallization treatment is conducted on the non-crystalline silicon layers subjected to the dehydrogenation treatment to form the low-temperature polycrystalline silicon film. According to the embodiment, by depositing the multiple non-crystalline silicon layers having different membranous parameters different in non-crystalline silicon refraction index and heat conductivity coefficient, formation of large-sized crystalline grains in the crystallization process is promoted, active layer low-temperature polycrystalline silicon has fewer crystal boundaries, leaked current during connection of the thin film transistor can be decreased, and the electrical performance of the thin film transistor is improved.

The invention discloses a corrosion-resistant ceramic roller. The ceramic roller is mainly prepared from kaolin, refractory clay, alumina, a sintering aid and other raw materials. The invention also discloses a preparation method of the corrosion-resistant ceramic roller. The prepared corrosion-resistant ceramic roller is resistant to rapid cooling and rapid heating and does not crack after beingcycled at 1350 DEG C-room temperature 2 times or more, has normal temperature bending strength being higher than or equal to 80 MPa, high temperature bending strength being higher than or equal to 80MPa at 1350 DEG C, water absorption being lower than or equal to 0.5% and roller mass erosion rate being lower than or equal to 1% , has significant corrosion resistance, and can be widely used in production of ceramic products and magnetic materials.

The invention discloses a film for a Ta-Al-N dispersing obstructing layer used for interconnection of copper, which is characterized in that the weight percentage of the film is 1.5 to 7.8 percent of Al, 8.4 to 11.5 percent of N and the rest is Ta; the film is manufactured by using a multi-target magnetic control sputtering method. The invention also discloses a technique for preparing the film for the Ta-Al-N dispersing obstructing layer, in particular preparation by adopting the magnetic control sputtering method. The obstructing characteristics of the Ta-Al-N film can not lose effect until being annealed for 5 minutes under the temperature of 900 DEG C. compared with the traditional Ta-N or Ta/Ta-N obstructing layer, the Ta-Al-N film of the invention can effectively improve the obstructing property thereof simultaneously when maintaining the excellent adhesive property and low resistance rate of the traditional material of the obstructing layer as a few amount of Al is added; simultaneously as the existence of the few amount of Al, an ultra-thin alumina layer is easy to be formed on the film surface, thus effectively avoiding the obstructing layer from being oxidized.

The invention belongs to the field of solar cells, and particularly discloses a non-halogen lead-doped perovskite thin film and a preparation method and application thereof. The perovskite thin film is prepared by adding lead oxalate into a perovskite precursor solution. According to the preparation method, a trace amount of lead oxalate is added into a perovskite precursor solution, and a perovskite thin film layer in a solar cell is obtained through spin coating by a low-temperature solution treatment method, so that the crystallization process of the perovskite material is slowed down, anda thin film with larger crystal grains and fewer crystal boundaries is obtained. The preparation process is simple, and the production cost is saved. The crystallization condition of the perovskite thin film can be well improved, defects are reduced, carrier recombination is inhibited, and the performance of the device is improved. Meanwhile, an indoor perovskite solar cell obtained by the methodhas a great prospect in the aspect of indoor low-illumination power supply in the future.

The invention provides a linear hierarchy lithium titanate material, as well as preparation and application thereof. The lithium titanate material has a spinel crystal phase, or a monoclinic crystal phase or a composite crystal phase of spinel and monoclinic crystal phases, wherein the lithium titanate material is mainly formed by a linear hierarchy structure which has a draw ratio of more than 10; and the surface of the lithium titanate material with the linear hierarchy structure is formed by nanosheets. According to the linear hierarchy lithium titanate material, the long axis of the linearstructure is favorable to effective mobility of electrons, the flaky hierarchy structure is favorable to the process of quickly embedding in and out lithium ions, sodium ions or potassium ions, a large specific surface area is favorable to the contact area of electrolyte and electrode, the current density is reduced, and the material has relatively good battery quick charge and discharge performance.

The invention provides an organic field effect transistor which uses a compound shown in a formula I as described in the specifications as an organic semiconductor layer, and a manufacturing method thereof and applications thereof. In the formula I, R1 and R2 can be the same or different and selected from at least one of hydrogen, substituted or unsubstituted C1-C50 alkyl, and substituted or unsubstituted C6-C50 aryl, and X is C=C or C-C triple bond. The organic field effect transistor has excellent device stability, the sensing response difference for incident lights of different wavelengths is significant, an extremely sensitive sensing response to an UVA with the light intensity to be only 37muWcm<-2> and the wavelength to be 365 to 420nm, light responsibility (R) exceeds 6000A/W, photosensitivity (P) can maximally reach 6.75*105, and thus the organic field effect transistor can be used for manufacturing an ultraviolet sensor, photosensitivity of the manufactured ultraviolet sensor in UVA is basically not changed along with changes of the light intensity, and great advantages are provided in the aspect of incident light distribution region reverse detection.