Method for continuous low temperature sintering of high thermal coefficient AIN ceramics and product thereof

Abstract

The invention relates to the field of microelectronic packaging material or ceramic material, in particular to a method for continuous low temperature sintering of high thermal coefficient AIN ceramics and a product thereof; the AIN ceramics is prepared from AIN powder and additive by sintering; the AIN powder has an average grain diameter of 1.0-2.0mum and an oxygen content of being equal to or less than 1.0%, the additive is composed of nano AIN powder, sintering auxiliary agent and rare earth metal oxide; wherein the sintering auxiliary agent is selected from CaCO3 and LiCO3, the rare earth metal oxide is selected from Y2O3, Sm2O3, Dy2O3, Nd2O3, Ho2O3 and Er2O3, wherein the content of the sintering auxiliary agent is 1-2wt%, the use amount of the nano AIN powder accounts for 5-10% of the total weight, the content of the rare earth oxide is 1-3wt%. The invention has the beneficial effects that superfine aluminum nitride powder and sintering aid are used to improve sintering property of the aluminium nitride ceramics, lower sintering temperature of the AIN ceramics, so that densification sintering can be carried out with the range of 1450-1600 DEG C and thermal conductivity of the AIN ceramics can reach 170-220W/m.K; in addition, the invention has the advantages of capability of sintering in a continuous hydrogen and nitrogen atmosphere furnace, improved production efficiency, low energy consumption, large output and low cost.

Description

technical field [0001] The invention relates to the field of microelectronic packaging materials or ceramic materials, in particular to a method for continuous low-temperature sintering of AlN ceramics with high thermal conductivity and its products. Background technique [0002] The existing aluminum nitride ceramics have excellent thermal conductivity, non-toxicity, high volume resistivity, thermal expansion performance close to that of silicon, etc. It is an ideal material for electronic substrates and packaging and has attracted widespread attention in the industry. However, aluminum nitride is a covalent bond crystal, and it cannot be sintered densely by itself. It needs to be sintered by adding sintering aids under high temperature and high pressure. Most of the current aluminum nitride products are sintered at 1800~1900°C. Because the sintering cost is too high, the current market price is very high, and it is difficult to popularize and use it. In recent decades, lo...

AI Technical Summary

Problems solved by technology

[0005] Its shortcoming is that its molding process and sintering process are all intermittent production processes, which cannot be operated continuously and are not suitable for mass industrial production.

The disadvantage is that the liquid phase formed by adding a large amount of sintering aid is not easy to be completely eliminated, and there will be grain boundary phases formed in the aluminum nitride sintered body, which hinders the improvement of the thermal conductivity of aluminum nitride ceramics

However, if the amount added is too small, the sintering temperature will rise, and low-temperature sintering will make it difficult to compact, and the purpose of lowering the sintering temperature will not be achieved.