Metal-ion-doped perovskite thin film, preparation method and application therefor

A technology of metal doping and perovskite, which is applied in the field of solar cells, can solve the problems of poor coverage of perovskite films, increased electron-hole recombination, and large forward and reverse scan hysteresis of batteries, etc., to achieve good electron-hole The effect of transmission capacity, coverage increase, hysteresis optimization

Active Publication Date: 2016-06-22
HEBEI UNIVERSITY
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  • Abstract
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Problems solved by technology

However, the CH prepared by the liquid-phase one-step method 3 NH 3 PB 3 The poor coverage of the perovskite film leads to direct contact between the hole transport layer (HTM) and the dense layer, resulting in incr

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  • Metal-ion-doped perovskite thin film, preparation method and application therefor
  • Metal-ion-doped perovskite thin film, preparation method and application therefor
  • Metal-ion-doped perovskite thin film, preparation method and application therefor

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[0043] Example 1

[0044] The preparation method of the metal-doped perovskite film in the present invention is: dissolving metal Al in a HI solution to form a HI solution containing metal Al ions; then combining the HI solution containing metal Al ions with methylamine (CH 3 NH 2 , Abbreviated as MA) The solution is mixed uniformly in a volume ratio of 1:1 to prepare MAI powder doped with metal Al ions; then the MAI powder doped with metal Al ions is mixed with PbCl 2 Mix and dissolve in dimethylformamide (DMF) at a molar ratio of 3:1 to prepare a 35wt% perovskite precursor solution, and then prepare a perovskite doped with metal Al ions by a liquid phase one-step spin coating method film.

[0045] The preparation method in the present invention is described in further detail below.

[0046] The first step: the preparation of MAI powder doped with metal ions for synthesizing the perovskite precursor.

[0047] 1) Weigh a certain amount of metal Al powder and put it into a 20mL vial;

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Abstract

The invention discloses a metal-ion-doped perovskite thin film, a preparation method and an application therefor. The preparation method for the metal-ion-doped perovskite thin film comprises the specific steps of dissolving metal powder into an HX solution to form the HX solution containing metal ions, wherein X is Cl, Br or I; enabling the HX solution containing metal ions to be mixed with an methylamine solution, and drying to prepare metal-ion-doped MAX powder; enabling the metal-ion-doped MAX powder to be mixed with the a lead salt, and dissolving the mixture into dimethylformamide to prepare a perovskite precursor liquid, wherein the lead salt is PbBr<2>, PbI<2> or PbCl<2>; and preparing the metal-ion-doped perovskite thin film from the perovskite precursor liquid through a rotary coating process. The metal-ion-doped perovskite thin film is prepared through a liquid phase one-step method; the cover degree of the prepared perovskite thin film is greatly improved; and the requirement of a perovskite solar cell on the high quality of the perovskite thin film can be fully satisfied.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a metal-doped perovskite film, its preparation method and application. Background technique [0002] Solar cells can directly convert solar energy into electrical energy. Since solar energy is an inexhaustible clean energy source, solar cells are an important countermeasure for human beings to cope with the energy crisis and seek sustainable development. Currently, crystalline silicon solar cells account for 89% of the photovoltaic market share. However, expensive raw materials and cumbersome cell processes limit the long-term development of crystalline silicon solar cells. In the past decade, thin-film solar cells include silicon-based thin-film, Cu(In,Ga)Se 2-x S x And CdTe batteries have also begun to achieve large-scale industrialization. As an outstanding representative of the third generation of solar cells, perovskite solar cells are a new type of all-solid-state o...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/00Y02E10/549
Inventor 麦耀华范建东张星刘冲沈艳娇李红亮陈荣荣
Owner HEBEI UNIVERSITY
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