Metal-ion-doped perovskite thin film, preparation method and application therefor
A technology of metal doping and perovskite, which is applied in the field of solar cells, can solve the problems of poor coverage of perovskite films, increased electron-hole recombination, and large forward and reverse scan hysteresis of batteries, etc., to achieve good electron-hole The effect of transmission capacity, coverage increase, hysteresis optimization
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[0044] The preparation method of metal-doped perovskite thin film among the present invention is: metal Al is dissolved in HI solution, forms the HI solution containing metal Al ion; Then contains the HI solution of metal Al ion and methylamine (CH 3 NH 2 , abbreviated as MA) solution was mixed uniformly at a volume ratio of 1:1 to prepare MAI powder doped with metal Al ions; then the MAI powder doped with metal Al ions was mixed with PbCl 2 Mix and dissolve in dimethylformamide (DMF) at a molar ratio of 3:1 to prepare a 35wt% perovskite precursor solution, and then prepare a perovskite doped with metal Al ions by one-step spin coating in the liquid phase film.
[0045] The preparation method in the present invention is further described in detail below.
[0046] The first step: the preparation of MAI powder doped with metal ions for the synthesis of perovskite precursor solution.
[0047] 1) Weigh a certain amount of metal Al powder and put it into a 20mL vial;
[0048] 2) ...
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