Metal-ion-doped perovskite thin film, preparation method and application therefor
A technology of metal doping and perovskite, which is applied in the field of solar cells, can solve the problems of poor coverage of perovskite films, increased electron-hole recombination, and large forward and reverse scan hysteresis of batteries, etc., to achieve good electron-hole The effect of transmission capacity, coverage increase, hysteresis optimization
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[0043] Example 1
[0044] The preparation method of the metal-doped perovskite film in the present invention is: dissolving metal Al in a HI solution to form a HI solution containing metal Al ions; then combining the HI solution containing metal Al ions with methylamine (CH 3 NH 2 , Abbreviated as MA) The solution is mixed uniformly in a volume ratio of 1:1 to prepare MAI powder doped with metal Al ions; then the MAI powder doped with metal Al ions is mixed with PbCl 2 Mix and dissolve in dimethylformamide (DMF) at a molar ratio of 3:1 to prepare a 35wt% perovskite precursor solution, and then prepare a perovskite doped with metal Al ions by a liquid phase one-step spin coating method film.
[0045] The preparation method in the present invention is described in further detail below.
[0046] The first step: the preparation of MAI powder doped with metal ions for synthesizing the perovskite precursor.
[0047] 1) Weigh a certain amount of metal Al powder and put it into a 20mL vial;
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