79results about How to "Good crystallinity" patented technology

The invention provides a high-efficiency large-scale solar water decomposition hydrogen production technique based on photocatalysis - photoelectrocatalysis. The technique comprises the following steps that soluble high-valence electron carriers are converted into low-valence electron carriers by a powdered photocatalyst under illumination of the sun, so that large-area solar storage is realized, besides, oxygen is emitted, and protons are generated; an electrolyte solution storing the electron carriers and the protons is conveyed into a photoelectrocatalysis basin; and a photon-generated carrier is generated at the anode of the photoelectrocatalysis basin by utilizing the sunlight, so that the low-valence electron carriers are oxidized into the high-valence electron carriers, and protons are combined at the cathode of the photoelectrocatalysis basin to generate hydrogen. After the hydrogen is collected, the electrolyte solution is returned to a photocatalysis system for recycling. The whole reaction is driven by sunlight to realize the conversion of solar energy into hydrogen energy.

The invention provides an inorganic metal halide perovskite nanosheet preparation method. Cesium lead halide CsPbX3 perovskite nanosheets are prepared by means of a high-temperature thermal injection method. According to the high-temperature thermal injection method for synthesis, a metal halide precursor in an oil system is in reaction under inertial gas shielding to produce metal halide perovskite nanosheets, and the size of the perovskite nanosheets is controlled by change of reaction temperature and time. The synthesized nanosheets have the advantages of shape uniformity, high light emitting efficiency, high stability, simplicity in synthesis and high development value.

The invention discloses a method to prepare SAPO-34 molecule sieve through liquid phase crystallization: the precursor compounds of aluminum, silicon and phosphorous are prepared into dry gel, then the dry gel powder and a water solution of organic amine template are placed in a stainless steel high pressure vessel, and the SAPO-34 molecule sieve is synthesized through liquid crystallization. The molecule sieve after being treated can be used for a catalyst for transferring methanol into low carbon olefins. The method solves the wall sticking trouble of hydrothermal synthesis, and has the advantages of simple preparation process, good crystallization degree, simple equipments, and a normal high pressure stainless steel reaction boil can be adopted in the crystallization process, which is beneficial to industrialized mass production, and the organic amine template can be recycled.

A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.A GaN (0001) or AlN (0001) single crystal film, or a super-lattice structure of GaN (0001) and AlN (0001) is formed on a Si (110) substrate via a 2H—AlN buffer layer.

A thin film multilayer body is disclosed that includes a single crystal substrate of silicon or gallium arsenide; an intermediate layer of magnesia spinel formed on the single crystal substrate by epitaxial growth; and a conductive layer of a platinum-group element formed on the intermediate layer by epitaxial growth. An oxide layer is to be epitaxially grown on the conductive layer, the oxide layer having a crystalline structure having a simple perovskite lattice.

The invention provides a new preparation method for a crystal form Gefitinib Form 1, which comprises the following steps: dissolving Gefitinib into one type or multiple types of solvents of ethanol, isopropanol and butyl alcohol; cooling; and crystallizing to prepare the crystal form Gefitinib Form 1.

A piezoelectric / electrostrictive porcelain composition contains at least Nb, Ta, and one or more kinds of alkali metal elements, and a ratio (molar ratio) of Nb, Ta, and the alkali metal element is represented by a non-stoichiometric composition ratio. The piezoelectric / electrostrictive porcelain composition is capable of obtaining a piezoelectric / electrostrictive device which is dense and which is superior in crystallinity and which exhibits superior piezoelectric / electrostrictive characteristics even in a case where the composition is fired on lower-temperature conditions as compared with a conventional technology.

In a GaN crystal substrate, a rear surface opposite-to a crystal growth surface can have a warpage w(R) satisfying −50 μm≦w(R)≦50 μm, a surface roughness Ra(R) satisfying Ra(R)≦10 μm, and a surface roughness Ry(R) satisfying Ry(R)≦75 μm. Further, a method of manufacturing a semiconductor device includes the step of preparing the GaN crystal substrate as a substrate and growing at least one group-III nitride crystal layer on a side of the crystal growth surface of the GaN crystal substrate. Thereby, a GaN crystal substrate having a rear surface with a reduced warpage and allowing a semiconductor layer having good crystallinity to be formed on a crystal growth surface thereof, a method of manufacturing the same, and a method of manufacturing a semiconductor device are provided.

The invention relates to a bead-chain-like graphitized carbon nitride nano material and a preparation method thereof and belongs to the technical field of semi-conductor material preparation. The bead-chain-like graphitized carbon nitride nano material adopts a bead-chain-like structure formed by arranging raised bead-like objects on the surfaces of graphitized carbon nitride nano-rods, wherein the diameter of the bead-like objects is 200-800 nm; the space between the bead-like objects is 200-800 nm; the nano-rods connected with the bead-like objects are 80-500 nm in diameter, and 5-13.6 [mu]m in chain length. The preparation method comprises the following steps: dissolving melamine into an alcohol solution to obtain an initial solution; then adding a nitric acid solution, stirring and precipitating to produce carbon nitride precursor solid powder; after that, forging to obtain the bead-chain-like graphitized carbon nitride nano material. The preparation process is simple, and the obtained product has the advantages of smooth surface, uniform size, relatively good dispersity and the like, and can serve as a template for preparing other materials or as carriers of noble metal nano-particles.

The invention provides a gallium nitride nanowire and a preparation method thereof. The preparation method includes: under atmospheric pressure, chemical vapor deposition of elemental gallium, gallium oxide and an ammonia gas containing gas is carried out on a substrate loaded with a catalyst for preparation of the gallium nitride nanowire. The gallium nitride nanowire prepared by the preparation method has a periodic structure, and controllable morphology and sizes. The prepared gallium nitride nanowire having the periodic structure, compared with non periodic structure and straight gallium nitride nanowires prepared by the prior art, has more abundant exposed surfaces and improved photoelectrical properties, and has wide potential application value in the research and application of micro-nano optoelectronic devices. The preparation method is simple and easy to operate, and the use of high vacuum equipment which is a must in methods of the prior art is not needed.

The invention relates to a doping modified lithium-rich layered positive electrode material and a preparation method thereof, in particular to a new novel lithium-rich layered positive electrode through doping modification on a material by anions of F<->, Cl<-> and Br<-> according to a certain proportion, and belongs to the technical field of a lithium ion battery. The synthesis method comprises the following steps of firstly, weighing a lithium salt, a metal nitrate and a non-metal salt according to mole ratios, dissolving the lithium salt, the metal nitrate and the non-metal salt in deionized water, adding citric acid, and adjusting a pH value to be 7-8 with ammonia; secondly, heating, stirring and reacting the obtained mixture to obtain wet gel, drying the wet gel to obtain dry gel, and pre-sintering the dry gel to obtain a precursor; and finally, carrying out high-temperature roasting and grinding to obtain the lithium-rich positive electrode Li[Li<0.2>Ni<0.15>Mn<0.55>Co<0.1>]O<2-x>M<x> (M is F, Cl or Br) (0<=x<0.1), namely the modified layered lithium-rich positive electrode material. The positive electrode material prepared according to the method is small and uniform in particle, smooth in surface and high crystallization property, and thus, the positive electrode material has relatively high discharge specific capacitance and favorable rate performance; and by co-doping, the cycle performance and the initial coulombic efficiency of the positive electrode material can be improved, the irreversible capacitance loss is reduced, and thus, the positive electrode material has great industrial significance.

The invention belongs to the technical field of lithium ion battery materials, and discloses a preparation method of a high-nickel positive electrode material for a lithium ion battery. The preparation method provided by the invention comprises the following steps: (1) preparing salt, alkali and complexing agent solutions; (2) adding the salt, alkali and complexing agent solutions to a reaction kettle in a cocurrent flow for reaction; (3) cleaning and drying to obtain a required precursor; (4) mixing the precursor with a lithium source and sintering at a time; (5) cleaning with a special washing liquid, filtering and rinsing; and (6) coating and returning to sinter to obtain the high-nickel positive electrode material for the lithium ion battery. According to the method provided by the invention, the high-nickel positive electrode material is first cleaned in the special washing liquid, a coating compound is mixed, and then an oxygen is used for sintering to disperse lithium inside thematerial uniformly; with such a method, while residual alkali on a surface of the material can be cleaned, the separation of internal lattice lithium is reduced, and the stability of an internal structure of the material is increased; and thus, the room-temperature and high-temperature cycling stability of the high-nickel material is improved.

The invention discloses a continuous preparation method of black phosphorus, and belongs to the technical field of phosphorus chemical industry. The method disclosed by the invention comprises the following steps: introducing gaseous phosphorus and a mineralizer into a microreactor in which the temperature is 550 to 750 DEG C, after sufficiently mixing the reactants inside the microreactor to react sufficiently, further introducing obtained gaseous products into a black phosphorus grower in which the temperature is 200 to 500 DEG C, growing black phosphorus inside the black phosphorus grower,simultaneously separating the mineralizer from black phosphorus in a gaseous state, and mixing with an initial mineralizer for continuous utilization. According to the preparation method, high-purityblack phosphorus can be prepared, and continuous preparation of black phosphorous can be realized, so that the device is low in cost, simple and easy to operate, the device can be engaged with production equipment of yellow phosphorous and red phosphorous in industrial engineering at present, and the production cost is reduced.

The invention discloses a preparation method of a high-ionic-conductivity composite solid electrolyte, and belongs to the field of ionic conductor electrolytes. The preparation method comprises the following steps: firstly, adding ceramic powder and a dispersing agent into deionized water to obtain slurry through ball-milling and mixing, dispersing the ceramic powder under the steric hindrance action of an organic chain of the dispersing agent adsorbed on the surfaces of ceramic particles, then adding a binder and a cross-linking agent, and continuously ball-milling to prepare water-based ceramic slurry; and before in-situ curing of the slurry, putting the template into the slurry, fully infiltrating, taking out, curing, drying, calcining to remove the template, carrying out high-temperature sintering to obtain a porous ceramic structure, and finally compounding with a polymer to obtain the solid electrolyte. Compared with other technologies, the method has the advantages that the structure of the porous ceramic electrolyte can be flexibly designed according to the selection of the template; meanwhile, the porous ceramic skeleton is compact, the crystallinity is good, the volume ratio is high, and the ionic conductivity of the composite electrolyte is greatly improved; the porous ceramic skeleton is environment-friendly, low in cost and beneficial to large-scale popularizationand application.

The invention relates to a preparation method of a spherical hollow lithium titanate / graphene composite material as a lithium battery negative material, and belongs to the field of lithium battery negative materials. The preparation method comprises the following steps of: preparing the nuclear shell structure of silicon dioxide@titanium dioxide by a template method; then transforming titanium dioxide into lithium titanate through hydrothermal reaction by adopting lithium hydroxide as a lithium source, and removing internal silicon dioxide by virtue of the corrosion of lithium hydroxide to generate spherical hollow structural lithium titanate. Prepared spherical hollow lithium titanate belongs to a spinel type, is more uniform in structure, has good crystallinity, is internally provided with a hollow structure and has a great specific area, thus greatly enlarging the contact area between spherical hollow lithium titanate and electrolyte, being favorable to the extraction and insertion of Li<+> in charging and discharging processes and greatly improving the charging and discharging properties of a battery.

Disclosed is a nickel powder having excellent crystallinity and a high shrink temperature, inhibiting sintering contraction even at high temperatures without affecting the decomposition temperature of the resin binder. Also provided is a production method for the nickel powder. The average particle diameter of the nickel powder is 0.05 - 0.3[Mu]m, crystalline diameter is 60% - 90% of specific surface area diameter, sulphur content is 0.1% - 0.5% by weight, and oxygen content is 0.4% - 1.5% by weight. The powder has a 2 - 15nm thick oxygen-containing surface coating layer with an outermost surface formed from a mixture of a nickel-sulphur compound and a nickel-oxygen compound. Furthermore, in x-ray photoelectron spectroscopy analysis, the outermost layer should preferably have an abundance ratio of 50% - 100% nickel sulphide in the sulphur compound and an abundance ratio of 0% - 50% of nickel hydroxide in the nickel-oxygen compound.

A method of manufacturing a nano-wire using a crystal structure, A crystal grain having a plurality of crystal faces is used as a seed, and a crystal growing material having a lattice constant difference within a predetermined range is deposited on the crystal grain, thereby allowing the nano-wire to grow from at least one of the crystal faces. Therefore, it is possible to give the positional selectivity with a simple process using a principle of crystal growth and to generate a nano-structure such as a nano-wire, etc. having good crystallinity. Further, it is possible to generate a different-kind junction structure having various shapes by adjusting a feature of a crystal used as a seed.

A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 μm and includes a perovskite oxide represented by a general formula (P) given below:(K1−w−x, Aw, Bx)(Nb1−y−z, Cy, Dz)O3 - - - (P),where: 0<w<1.0, 0≦x≦0.2, 0≦y<1.0, 0≦z≦0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

There are provided a method of manufacturing perovskite powder, and perovskite powder and a multilayer ceramic electronic component manufactured thereof. The manufacturing method includes: washing metal oxide hydrate to remove impurities therefrom; adding pure water and an acid or a base to the metal oxide hydrate to prepare a metal oxide sol; mixing the metal oxide sol with a metal salt to form perovskite particle nuclei; and conducting grain growth of the perovskite particle nuclei by hydrothermal treatment to produce perovskite powder. The method of manufacturing perovskite powder and the perovskite powder manufactured by the same have advantages such as excellent crystallinity, reduced generation of fine powder, and favorable dispersion properties.

The invention discloses a method for growing a semiconductor compound ZnS single-crystal nanowire bundle by the surfactant-assisted solvothermal method, which is realized through the following technological process: polyvinylpyrrolidone (PVP) is taken as a surfactant, and the weight thereof is 0.3g. Hydrazine hydrate is taken as a solvent, and the volume thereof is 40ml. Zinc acetate (Zn(CH3COO)2.2H2O) is taken as a zinc source, thiourea ((NH2)2CS) is taken as a sulfur source, and the two are sequentially added in the hydrazine hydrate which dissolves the surfactant according to the molar ratio of 1: 4. Then, a reaction vessel is arranged in a baking oven, the reaction time is 6h-48h, the reaction temperature is 120 DEG C-180 DEG C, and drying is carried out for 6h in a vacuum drying box at the temperature of 60 DEG C after the reaction is finished, thereby collecting products. The ZnS single-crystal nanowire bundle with a wurtzite structure can be obtained under the conditions of the temperature and the time. The method is simple and easy to promote, thereby being applicable to large-scale industrial production.

The invention discloses a preparation method of a nickel-cobalt nickel-cobalt lithium manganate anode material through hydro-thermal synthesis. In the process of adding a lithium source, a nickel-cobalt precursor and the lithium source are synthesized after subjected to a reaction for 20-30 h at 160-250 DEG C through adoption of a hydro-thermal method; the obtained materials are dried, crushed andthen placed in a muffle furnace for sintering for 6-16 h at 700-980 DEG C to obtain the nickel-cobalt lithium manganate anode material. The preparation method has the following advantages that through the hydro-thermal synthesis, low-temperature crystallization of the precursor and the lithium source is achieved, and the phenomena can be avoided that during stirring and blending, the lithium source is wasted, and a part of the lithium source is not blended evenly; the internal crystals of the material prepared through the hydro-thermal synthesis have few defects, influence factors of materialcrystalline due to temperature control are reduced during sintering, the calcination temperature of the material is decreased, the calcination time of the material is shortened, and the cost is saved; the anode material prepared according to the preparation method has higher discharging capacity and more excellent circulation performance.

The invention relates to a preparation method of vanadium titanium carbide, belongs to the field of metal ceramic, and aims to solve the technical problem by providing the preparation method of vanadium titanium carbide. The preparation method of vanadium titanium carbide comprises the following steps: a, preparing materials: mixing evenly ammonium metavanadate, titanium dioxide and carbon powder to obtain a mixed material; b, pressing for forming: pressing for forming the mixed material to obtain a pressure block with density of 1.5-2.5 g / cm<3>; c, a first carbonation: conducting carbonization on the pressing block, and removing ammonium and crystallized water of in the mixed material, insulating and cooling; d, secondary carbonation: brushing off carbon powder on the surface of the pressing block, grinding, sieving, conducting ball milling treatment and pressing for forming to obtain pressing block with density of 1.5-2.5 g / cm<3>; and then insulating in a vacuum atmosphere at 1500-1800 DEG C for 1-3 h, and cooling to obtain the vanadium titanium carbide. The vanadium titanium carbide prepared by the preparation method has good crystallinity, and the preparation method is simple and low in energy consumption.

The invention relates to a preparation method of a nano-hydroxyapatite / chitosan composite material. The preparation method comprises the following steps of: uniformly mixing nano-hydroxyapatite with an acetic acid solution of chitosan, mixing a mixture with liquid paraffin, adding an emulsifying agent span80 (sorbitan oleate); after a system is fully emulsified, adding glutaraldehyde for carrying out crosslinking reaction; and centrifugally separating, washing and vacuum-drying a suspension and then collecting to obtain the nano-hydroxyapatite / chitosan composite material. According to the reversed-phase microemulsion preparation method of the nano-hydroxyapatite / chitosan composite material, provided by the invention, the nano-hydroxyapatite / chitosan composite material has the characteristics of particle width and long diameter within a nano scale range, regular feature and good crystallinity. The preparation method is simple in preparation process and low in cost, is suitable for batch production, and has an important application value in the field of biomedicine.

The invention discloses a Cu7S4@MoS2 heterogeneous nanometer framework material and application thereof in producing hydrogen by catalytically electrolysing water.By means of a method for conducting thermal decomposition on a precursor, Cu7S4 serves as a supporting framework, and a tiny annular Cu7S4@MoS2 heterogeneous nanometer framework structure which is extremely high in activity and stability is obtained through MoS2 etching, wherein the surface of the Cu7S4@MoS2 heterogeneous nanometer framework structure is rich in active edge loca; after the surface ligands of the Cu7S4@MoS2 heterogeneous nanometer framework structure are removed, the Cu7S4@MoS2 heterogeneous nanometer framework structure is mixed with C powder, and the mixture is coated on electrodes to be applied to the process of catalytically electrolysing the water to produce hydrogen.Serving as a non-noble metal catalyst, due to the fact that the Cu7S4@MoS2 heterogeneous nanometer framework material has good crystallinity and is rich in MoS2 active edge loca, deposition potential of hydrogen in water can be reduced, the Cu7S4@MoS2 heterogeneous nanometer framework material can replace platinum to serve as an effective electro-catalysis material for hydrogen evolution, when electric current density reaches 10 mA / cm<2> and 200 mA / cm<2>, the overpotentials are only 133 mV and 206 mV respectively, and the highest activity and stability are shown in reported MoS2 nanometer catalysts.Due to the fact that a solvothermal method can be subjected to reasonable extension, by means of the Cu7S4@MoS2 heterogeneous nanometer framework material and the application thereof in producing hydrogen by catalytically electrolysing the water, a new way is paved for massively developing other non-noble sulfide catalysts.

The invention discloses a method for preparing manganese tungstate nano-sheets by a molten salt method. The method disclosed by the invention comprises the steps of respectively preparing sodium tungstate and manganese chloride into solutions, stirring, and then performing suction filtration and drying; then grinding with lithium nitrate, placing into a crucible, performing heat preservation for 2h-6h at the temperature of 300-400 DEG C, taking out and cooling. The method disclosed by the invention has the advantages of simple process and easiness in industrial production; moreover, the obtained manganese tungstate nano-sheets have the advantages of high purity, novel and unique nano-crystals and the like.

The invention provides a method for preparing ZrB2-Cu composite powder, belongs to the field of ceramic / metal composite material preparation and in particular relates to the method for preparing the ZrB2-Cu composite powder having a good internal metal-ceramic binding property. The method comprises two steps of ZrB2 preprocessing and chemical copper plating; the ZrB2 powder is chemically copper-plated by use of a chemical plating method, and then the Cu-coated ZrB2 powder can be prepared. The composite powder prepared by use of the method is good in dispersity; the copper coating is excellent in crystallinity without impurity phase; the surface of the coating is accumulated randomly by fine metal spherical particles; the coating is compact, uniform, flat and smooth, and has wide application prospect.

The invention discloses a Ni2P4O12 nanoparticle material and a preparation method and application thereof and belongs to the technical field of catalyst preparation. The Ni2P4O12 nanoparticle materialhas a multistage nanostructure, and nanocrystals of 5-10nm are modified on network-shaped interconnected nanoparticles of about 100nm. The structure provides tremendous active sites for oxygen evolution reaction in electrolytic water and is conducive to adsorption of water molecules, and theoretical researches confirm that crystal planes of exposed nanocrystals have quite low adsorption energy onthe water molecules and oxygen intermediate.

The invention relates to a method for preparing an inorganic tin-based perovskite solar cell by physical vapor deposition. The inorganic tin-based perovskite solar cell is successively composed of a flexible polyimide conductive substrate, a tin-based perovskite CsSnI3 layer and an ultrathin metal-based transparent conductive film. The method includes the steps of 1) cleaning the substrate, 2) preparing a hole transport layer CuI by radio frequency magnetron sputtering, 3) preparing the tin-based perovskite CsSnI3 layer by vapor deposition, 4) preparing an electron transport layer ZnO by radiofrequency magnetron sputtering and 5) preparing the ultrathin metal-based transparent conductive film by a continuous magnetron sputtering method to form the inorganic tin-based perovskite solar cell. An absorption layer film prepared by the method has good crystallinity and easy-to-control morphology, the efficiency of the perovskite solar cell is improved, the stability of the perovskite solarcell is enhanced, the sensitivity of the perovskite solar cell to temperature and humidity is reduced, and at the same time, heavy metal pollution is effectively avoided.