157 results about "Stoichiometric composition" patented technology

The invention is directed to a solid ion conductor which has a garnet-like crystal structure and has the stoichiometric composition L7+xAxG3−xZr2O12, whereinL is in each case independently a monovalent cation,A is in each case independently a divalent cation,G is in each case independently a trivalent cation,0≦x≦3 andO can be partly or completely replaced by divalent or trivalent anion.

A semiconductor device including an oxide-nitride-oxide (ONO) structure having a multi-layer charge storing layer and methods of forming the same are provided. Generally, the method involves: (i) forming a first oxide layer of the ONO structure; (ii) forming a multi-layer charge storing layer comprising nitride on a surface of the first oxide layer; and (iii) forming a second oxide layer of the ONO structure on a surface of the multi-layer charge storing layer. Preferably, the charge storing layer comprises at least two silicon oxynitride layers having differing stoichiometric compositions of Oxygen, Nitrogen and / or Silicon. More preferably, the ONO structure is part of a silicon-oxide-nitride-oxide-silicon (SONOS) structure and the semiconductor device is a SONOS memory transistor. Other embodiments are also disclosed.

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) Group III—Nitride nanostructures and uniform Group III—Nitride nanostructure arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanostructure can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed Group III—Nitride nanostructures and / or nanostructure arrays providing a uniform length of about 0.01-20 micrometers (μm) with constant cross-sectional features including an exemplary diameter of about 10 nanometers (nm)-500 micrometers (μm). Furthermore, core-shell nanostructure / MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale photoelectronic devices such as nanostructure LEDs and / or nanostructure lasers to provide tremendously-high efficiencies. Additional growth mode transitions from the pulsed to the non-pulsed growth mode and subsequent transitions from non-pulsed to pulsed growth mode are employed in order to incorporate certain group III—Nitride compounds more efficiently into the nanostructures and form devices of the designed shape, morphology and stochiometric composition. In addition, high-quality group III—Nitride substrate structures can be formed by coalescing the plurality of group III—Nitride nanostructures and / or nanostructure arrays to facilitate the fabrication of visible LEDs and lasers.

Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus. The method includes: forming a first layer including a first element on a substrate by supplying a gas containing the first element; forming a second layer including first and second elements by supplying a gas containing the second element to modify the first layer; and forming a thin film having a predetermined thickness by setting the forming of the first layer and the forming of the second layer to one cycle and repeating the cycle at least once. Pressure, or pressure and a gas supply time in one process of the forming of the first layer and the forming of the second layer are controlled to be higher or longer, or lower or shorter than pressure, or pressure and a time in the one process when the thin film having a stoichiometric composition is formed.

In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W / cm2 and lower than or equal to 0.5 W / cm2 is supplied to an electrode provided in the treatment chamber.

In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition. Said method comprising the step of selecting one or more compounds each comprising at least one element of the group comprising the rare-earth elements (RE), the alkaline-earth elements (AE), silicon (Si) and nitrogen (N) and together comprising the necessary elements to form the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). The method further comprises the step of bringing the compounds at an elevated temperature in reaction for forming the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). In such a method normally a small amount of oxygen, whether intentionally or not-intentionally added, will be incorporated in the rare-earth doped alkaline-earth silicon nitride phosphor (AE2Si5N8:RE). According to the invention the creation of defects by formation of a non-stoichiometric oxygen containing phosphor is at least partly prevented by partly substituting for the ions (AE, Si, N) of the alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) suitable further elements of the periodic system by which vacancies are created, filled or annihilated resulting in the formation of a modified alkaline-earth silicon nitride phosphor (AE2Si5N8:RE) having a stoichiometric composition. In this way a modified phosphor is obtained having excellent and stable optical properties. The invention further relates to a modified phosphor obtainable by the above-mentioned method and a radiation converting device comprising such a phosphor.

To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

The present invention provides a LiCoO2-containing powder comprising LiCoO2 having a stoichiometric composition via heat treatment of a lithium cobalt oxide and a lithium buffer material to make equilibrium of a lithium chemical potential therebetween: a lithium buffer material which acts as a Li acceptor or a Li donor to remove or supplement Li-excess or Li-deficiency, coexisting with a stoichiometric lithium metal oxide; and a method for preparing a LiCoO2-containing powder. Further, provided is an electrode comprising the above-mentioned LiCoO2-containing powder as an active material, and a rechargeable battery comprising the same electrode.The present invention enables production of a LiCoO2 electrode active material which has improved high-temperature storage properties and high-voltage cycling properties, and is robust in composition fluctuation in the production process. Therefore, the present invention provides advantages such as reduction of time and labor required for quality control and process management in the mass-production of the electrode active material, and decreased production costs of LiCoO2.

A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

A semiconductor device including a bilayer charge storing layer and methods of forming the same are provided. Generally, the method includes: (i) forming a first layer of the bilayer charge storing layer; and (ii) forming a second layer formed on a surface of the first layer, the second layer including an oxynitride charge trapping layer. Preferably, the first layer includes a substantially trap free oxynitride layer. More preferably, the oxynitride charge trapping layer includes a significantly higher stoichiometric composition of silicon than that of the first layer. In certain embodiments, the oxynitride charge trapping layer has a concentration of carbon selected to increase the number of traps therein. Other embodiments are also disclosed.

A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1−x)(Zr(1−s)Tis)O3(0<s<1) or lead-zirconate-titanate-based oxide expressed as (Pb(1−x−y)Ay)(Zr(1−t)TisBt)O3(0<s<1, 0<t<1−s) where A is a substitutive metal ion in an A-site in the perovskite crystalline structure and B is a substitutive metal ion in a B-site in the perovskite crystalline structure. The value of x, which indicates a deficiency in Pb content in each composition, is more than 0 but not more than 0.15.

A one-dimensional transverse multiple mode laser is used for a one-dimensional illumination apparatus. A pumping light source, and a laser medium and a wavelength conversion device (nonlinear optical crystal or a nonlinear optical device) which are disposed in a resonator, are provided, and the nonlinear optical crystal or a nonlinear optical device is irradiated with a line beam obtained by exciting the laser medium in an elliptic transverse mode pattern. Then, a one-dimensional light modulation device is irradiated with the wavelength-converted line beam, and scanning with the beam modulated by the modulation device is conducted to produce a two-dimensional image. For example, in a green illumination optical system, in the case where the nonlinear optical device for obtaining visible rays through second harmonic generation from IR rays oscillated by a solid state laser medium has a periodical poling structure, stoichiometric composition periodical poling lithium tantalate having been subjected to vapor transport equilibration is used, whereby reliability is enhanced and a reduction in cost can be achieved through mass production.

Methods for fabricating memory devices having a multi-dot floating gate ensuring a desirable crystallization of a semiconductor film without ruining the flatness of the surface of the polycrystallized silicon layer and a tunnel oxide film, allowing desirable semiconductor dots to be produced, and allowing production of the memory devices having a multi-dot floating gate with ease and at low costs even when a substrate is made of glass or plastic. Such a method for fabricating memory devices includes steps for forming on a substrate a semiconductor film and treating said semiconductor film by a first laser annealing so as to have a polycrystalline structure; forming on the semiconductor film a semiconductor dot forming film having a non-stoichiometric composition with an excessive content of a semiconductor element; and dispersing semiconductor dots within the semiconductor dot forming film by a second laser annealing thereby to produce semiconductor dots; in which a pulse energy density of the laser used for the first laser annealing is larger than a pulse energy density of the laser used for the second laser annealing.

In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

A recording layer included in an optical information recording medium of the present invention includes: a mixture of a low oxide Te-O-M (M denotes at least one element selected from the group consisting of a metallic element, a metalloid element, and a semiconductor element) or a low oxide A-O (A denotes at least one element selected from the group consisting of Sb, Sn, In, Zn, Mo and W; and a material X (X denotes at least one compound selected from the group consisting of a fluoride, a carbide, a nitride and an oxide). Herein the low oxide refers to an oxide whose composition ratio of oxygen element is smaller than a composition ratio of oxygen element according to a stoichiometric composition.

A lead-free piezoelectric ceramic composition wherein a suitable amount of Cu is contained in a perovskite compound of a non-stoichiometric composition represented by a formula (KxA1-x)y(Nb1-zBz)O3, wherein “A” represents at least one of Na and Bi, while “B” represents at least one of Ta and Ti, and wherein 0<x≦1, 0<y<1, and 0≦z≦1, so that by-products such as KaCubNbcOd and KaCubTacOd are produced as a result of reaction of (Nb1-zBz) with Cu in the process of calcination of a starting material, and the by-products restrict melting and abnormal grain growth of (KxNa1-x)(Nb1-zTaz) O3 during firing of a calcined body, thereby improving sinterability of the fired body, while restricting volatilization of alkali components and melting of KNbO3, thereby increasing the density and improving the piezoelectric properties of the fired body. The ceramic composition is prepared by firing a starting composition including the perovskite composition as a primary component, and a secondary component in the form of at least one of compounds KaCubNbcOd, KeCufTagOh and KiCujTikOl.

One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; and a second insulating film partly in contact with the oxide semiconductor film, between the oxide semiconductor film and the gate electrode. Further, the first insulating film including an element of Group 13 and oxygen includes a region where an amount of oxygen is greater than that in a stoichiometric composition ratio.

A variable resistive element that performs a forming action at small current and a stable switching operation at low voltage and small current, and a low-power consumption large-capacity non-volatile semiconductor memory device including the element are realized. The element includes a variable resistor between first and second electrodes. The variable resistor includes at least two layers, which are a resistance change layer and high-oxygen layer, made of metal oxide or metal oxynitride. The high-oxygen layer is inserted between the first electrode having a work function smaller than the second electrode and the resistance change layer. The oxygen concentration of the metal oxide of the high-oxygen layer is adjusted such that the ratio of the oxygen composition ratio to the metal element to stoichiometric composition becomes larger than the ratio of the oxygen composition ratio to the metal element of the metal oxide forming the resistance change layer to stoichiometric composition.

In a method for manufacturing a transistor including an oxide semiconductor layer, a gate electrode is formed and then an aluminum oxide film, a silicon oxide film, and the oxide semiconductor film are successively formed in an in-line apparatus without being exposed to the air and are subjected to heating and oxygen adding treatment in the in-line apparatus. Then, the transistor is covered with another aluminum oxide film and is subjected to heat treatment, so that the oxide semiconductor film from which impurities including hydrogen atoms are removed and including a region containing oxygen at an amount exceeding that in the stoichiometric composition ratio. The transistor including the oxide semiconductor film is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT test) can be reduced.

A method for manufacturing an optical disc master using an existing exposure system, and a method for manufacturing an optical disc having higher recording capacity. The method for manufacturing an optical disc, using a master to produce the optical disc having an irregular pattern thereon, the master being produced by the steps of forming a resist layer composed of a resist material including an incomplete oxide of a transition metal such as W or Mo on a substrate, the oxygen content of the incomplete oxide being smaller than the oxygen content of the stoichiometric composition corresponding to a valence of the transition metal; selectively exposing the resist layer with laser according to a recording signal pattern; and developing the resist layer to form the predetermined irregular pattern.