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Method for growing ZnS single-crystal nanowire bundle

A single-crystal nano, solvothermal technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the high requirements of reaction time, reaction temperature, concentration, complex operation process of soft template method, ZnS nanowires Complex growth and other problems, to achieve the effect of easy promotion, uniform morphology, and simple method

Inactive Publication Date: 2010-04-07
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The operation process of the soft template method is complicated, and the requirements for reaction time, reaction temperature and concentration are high, and it is not easy to control
The chemical vapor deposition method requires a carrier gas in the process of preparing ZnS nanowires, and the temperature and the size of the gas flow have a great influence on the product, so this method is more complicated to control the growth of ZnS nanowires

Method used

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  • Method for growing ZnS single-crystal nanowire bundle
  • Method for growing ZnS single-crystal nanowire bundle
  • Method for growing ZnS single-crystal nanowire bundle

Examples

Experimental program
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Effect test

Embodiment 1

[0021] With polyvinylpyrrolidone (PVP) 0.3g as surfactant, it is added in the reactor that fills 40ml hydrazine hydrate, and puts into magnetic sub-stirring; Then zinc acetate and thiourea are mixed with 1 (0.220g): 4 ( 0.304g) in the mol ratio was added to the reactor successively, and stirred with a magnet. After stirring well, the reaction kettle was put into an oven at 160° C. for 48 hours. After washing, the product was dried in a vacuum oven at 60° C. for 6 h to collect the product. The results of XRD analysis showed that the obtained product was ZnS with wurtzite structure.

Embodiment 2

[0023] With polyvinylpyrrolidone (PVP) 0.3g as surfactant, it is added in the reactor that fills 40ml hydrazine hydrate, and puts into magnetic sub-stirring; Then zinc acetate and thiourea are mixed with 1 (0.220g): 4 ( 0.304g) in the mol ratio was added to the reactor successively, and stirred with a magnet. After stirring sufficiently, the reaction kettle was placed in an oven at 160° C. for 36 hours. After washing, the product was dried in a vacuum oven at 60° C. for 6 h to collect the product. The results of XRD analysis showed that the obtained product was ZnS with wurtzite structure.

Embodiment 3

[0025] With polyvinylpyrrolidone (PVP) 0.3g as surfactant, it is added in the reactor that fills 40ml hydrazine hydrate, and puts into magnetic sub-stirring; Then zinc acetate and thiourea are mixed with 1 (0.220g): 4 ( 0.304g) in the mol ratio was added to the reactor successively, and stirred with a magnet. After stirring well, the reaction kettle was put into an oven at 160° C. for 24 hours. After washing, the product was dried in a vacuum oven at 60° C. for 6 h to collect the product. The XRD analysis results show that the obtained product is ZnS with wurtzite structure, such as figure 1 shown. The shape of the ZnS nanostructure is regular, the average particle size is about 10-20nm, and its transmission electron microscope picture is as follows figure 2 and image 3 , high-resolution transmission electron microscope pictures such as Figure 4 .

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Abstract

The invention discloses a method for growing a semiconductor compound ZnS single-crystal nanowire bundle by the surfactant-assisted solvothermal method, which is realized through the following technological process: polyvinylpyrrolidone (PVP) is taken as a surfactant, and the weight thereof is 0.3g. Hydrazine hydrate is taken as a solvent, and the volume thereof is 40ml. Zinc acetate (Zn(CH3COO)2.2H2O) is taken as a zinc source, thiourea ((NH2)2CS) is taken as a sulfur source, and the two are sequentially added in the hydrazine hydrate which dissolves the surfactant according to the molar ratio of 1: 4. Then, a reaction vessel is arranged in a baking oven, the reaction time is 6h-48h, the reaction temperature is 120 DEG C-180 DEG C, and drying is carried out for 6h in a vacuum drying box at the temperature of 60 DEG C after the reaction is finished, thereby collecting products. The ZnS single-crystal nanowire bundle with a wurtzite structure can be obtained under the conditions of the temperature and the time. The method is simple and easy to promote, thereby being applicable to large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and relates to a method for growing ZnS single crystal nanowires by using a solvothermal method under the action of a surfactant. Background technique [0002] ZnS is a typical direct wide bandgap II-VI compound semiconductor, and its bandgap width is 3.66eV at room temperature. It has superior luminescent properties and is an important luminescent material. When ZnS reaches the nanomaterial scale, it can exhibit obvious quantum size effects. Due to the above important optical properties of ZnS, it is widely used in the manufacture of nonlinear optical devices, light-emitting diodes, field-effect transistors, solar cells, infrared window materials, dyes, catalysts, and sensors. [0003] The performance of a semiconductor material is determined by its structure, so the difference in size, shape, and crystal orientation will lead to changes in the photoelectric properties of the semiconductor ...

Claims

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Application Information

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IPC IPC(8): C01G9/08B82B3/00
Inventor 吴荣简基康边延龙陶乐天封丽刘前霞孙言飞
Owner XINJIANG UNIVERSITY
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