27 results about "Temperature cycling" patented technology

The application discloses an electronic product temperature cycle life test system based on data analysis and relates to the technical field of electronic product testing, solves the technical problem that the prior art cannot extract a harsh scene and integrate it into a temperature cycle scheme for temperature cycle test in combination with the use scene of an electronic product, and specifically relates to a use scene joint analysis unit which performs life test analysis on an electronic product in combination with the use scene of the electronic product, extracts a harsh scene and integrates it into a temperature cycle scheme for temperature cycle test, and tests the electronic product under a simulated use scene; a material failure analysis unit which performs material failure analysis on the electronic product; a material welding failure risk determination unit which determines the material welding failure risk of the electronic product and controls the material connection of the electronic product in a timely manner; and a micro deformation analysis unit which performs micro deformation analysis on the electronic product and ensures the usability of the connection of the overall material.

This invention relates to a thermal unit for temperature management of a dPCR thermal cycler, and also to a thermal unit for a device for simultaneously thermally cycling multiple biological samples, also known as temperature cycling, such a device itself, and a method for simultaneously thermally cycling multiple biological samples using such a device and thermal unit. The thermal unit has at least one heat block (3) and a cooling structure (2), the heat block (3) comprising at least one thermoelectric transducer (31) and a heat transfer plate (33) attached to the thermoelectric transducer (31) for dissipating heat energy from the thermoelectric transducer (31), and the cooling structure (2) comprising a radiator (21), at least one fan (221), and exhaust pipes (24a, 24b).

The application discloses a kind of low temperature extremely cold environment under optical fiber coating detection equipment and method, belong to coating detection technical field, comprising: obtaining temperature cycle times, coating thickness, heating gradient and other detection condition data, and coating adhesion, shrinkage, cracking length and other performance data;Construct detection condition evaluation model output detection condition coefficient;Based on detection condition, coating performance analysis model is established to output performance evaluation coefficient;Combined with the content of silicon dioxide nanoparticles and polyether polyurethane data, material analysis model is output material analysis coefficient;If the coefficient exceeds the preset threshold, then determine that the coating is unqualified and generate target formulation parameters.The application solves the technical problems of coating performance quantification evaluation and formulation precise optimization under extreme environment, significantly improves detection efficiency and reliability.

The embodiments described herein generally relate to processing chambers incorporating a small thermal mass, which enable efficient temperature cycling for supercritical drying processes. The chambers generally include a body, a liner, and an isolation element that enables the liner to exhibit a small thermal mass relative to the body. The chambers are also configured with suitable equipment for generating and / or maintaining a supercritical fluid within a processing volume of the chamber.

The invention discloses a high-reliability chip bonding film, a preparation method thereof and application of the high-reliability chip bonding film in storage packaging, and relates to the technical field of electronic packaging materials. The chip bonding film is prepared from the following components in parts by mass: 30 to 40 parts of spherical silicon dioxide, 10 to 20 parts of phenoxy resin, 10 to 20 parts of acrylic epoxy resin, 10 to 15 parts of polyurethane modified epoxy resin, 3 to 6 parts of active epoxy diluent, 8 to 16 parts of phenolic aldehyde curing agent and 0.8 to 1.2 parts of accelerant, by adjusting the proportion of all the components and the synergistic effect of all the components, the strain capacity and moisture absorption resistance at high temperature are remarkably improved while excellent heat resistance is successfully maintained, so that high interface bonding strength can still be maintained after a harsh temperature cycle test; and the problem of packaging failure caused by brittle rupture and moisture absorption of the material is effectively solved.

This application provides a packaging structure including a packaging substrate and a chip. The packaging substrate includes a packaging surface and a bottom surface disposed opposite each other. The chip is disposed on the packaging surface, and N pads are disposed on the bottom surface. At least two adjacent pads with the same electrical properties are connected by a conductive sheet to form a reinforcing pad. When the above packaging structure is assembled with a circuit board, the solder balls corresponding to the reinforcing pads deform under heat and connect with each other to form large-volume solder balls covering the reinforcing pads. The large-volume solder balls have better fatigue strength. After the packaging structure and circuit board are assembled, during temperature cycling tests or use, the large-volume solder balls can uniformly distribute the stress they bear, making them less prone to fatigue cracks and breakage, effectively improving the board-level reliability of the assembled packaging structure and circuit board. This application also provides an electronic device and its manufacturing method.

This invention belongs to the field of radiation detection and medical device technology, specifically relating to a thermoplastic reflective adhesive, a scintillation ceramic array and its preparation method, and a CT detector. The thermoplastic reflective adhesive of this invention uses a specific thermoplastic resin as the main adhesive layer material, compounded with titanium dioxide-based reflective fillers and alumina, silica, and other absorbing fillers, and can be used to prepare scintillation ceramic arrays. The solution of this invention avoids the problems of long curing time and uneven shrinkage of the adhesive layer caused by high-temperature curing of thermosetting adhesives, significantly improving preparation efficiency. The prepared scintillation ceramic array exhibits excellent flatness and good batch consistency. After high and low temperature cycling tests, the flatness stability is excellent, and the product reliability is significantly improved. Assembling this scintillation ceramic array with a photoelectric converter to form a CT detector can effectively isolate optical crosstalk between pixels, ensure imaging signal fidelity, and meet the high-performance requirements of high-end medical imaging equipment.

To provide an Al connection material that may suppress generation of internal cracks at the time of manufacture and exhibits excellent temperature cycle reliability. An Al connection material containing 3.0% by mass or more and 12.0% by mass or less of Si, in which an average value of a ratio between a short side length c and a long side length d (c / d) of an Al phase in an L cross-section (cross section in a center axis direction including a center axis) of the Al connection material is equal to or larger than 0.25 and equal to or smaller than 0.7, and an average value of a ratio between a short side length e and a long side length f (e / f) of a Si phase in the L cross-section of the Al connection material is equal to or larger than 0.2 and equal to or smaller than 0.7.

This invention belongs to the field of polymer material surface modification and decorative coating technology, specifically relating to a translucent, metal-like plastic part and its preparation process. The translucent, metal-like plastic part includes a plastic substrate and a varnish layer, a metal layer, a UV nano-color paste layer, and a protective paint layer sequentially formed on its surface. The preparation process includes: cleaning the surface of the plastic substrate; applying and curing a varnish layer; forming a metal layer on the surface of the varnish layer via physical vapor deposition; spraying and curing a UV nano-color paste layer; and applying and curing a protective paint layer. This invention, through multi-layer composite structure design and process control, enables the plastic part to possess both a realistic metal-like texture and controllable light transmission. Simultaneously, it exhibits excellent coating adhesion, strong environmental adaptability, and can withstand harsh conditions such as high and low temperature cycling, humidity, and salt spray, meeting the high-end application needs of automotive interiors, electronics, and other fields for a combination of decoration and functionality.

This invention provides an Al bonding material that offers excellent temperature cycling reliability and good initial bond strength. It is an Al bonding material containing 4.0% to 12.0% by mass of Si, with a resistivity Ra of 2.6 × 10⁻⁶. ‑8 Ωm or more 3.6×10 ‑8 When measuring the crystal orientation of the Al phase in the L-section (including the section along the central axis) of the Al-bonded material with an Ωm or less, the angle difference relative to the central axis is 15° or less. <110> Crystal orientation and <111> When the total orientation ratio of the crystal orientation is between 20% and 70%, and the total orientation ratio is less than 25%, the angular difference relative to the central axis is less than 15°. <110> The orientation ratio of the crystal orientation is above 5%.

Provided is an Al joining material that satisfies excellent temperature cycle reliability and good first joint strength. An Al joining material is an Al joining material containing 3.0 mass% or more and 12.0 mass% or less of Si, wherein when crystal orientation of an Al phase in an L cross section of the Al joining material is measured, the sum of the orientation ratio of <111> crystal orientation to <110> crystal orientation with respect to a central axis direction angle difference of 15° or less is 20% or more and 70% or less, and wherein when crystal orientation of a Si phase in the L cross section of the Al joining material is measured, the sum of the orientation ratio of <111> crystal orientation to <110> crystal orientation with respect to a central axis direction angle difference of 15° or less is 20% or more and 70% or less, and wherein when the sum of the orientation ratio is 25% or less, the orientation ratio of <110> crystal orientation with respect to a central axis direction angle difference of 15° or less is 5% or more.

This invention relates to the field of circuit board technology, specifically to a method for evaluating the reliability of IC carrier boards. The method involves fabricating the IC carrier board material to be tested into a single test substrate, dividing the substrate into multiple test areas, and setting copper-free isolation and groove weakening structures between each area. This allows for manual disassembly and reliability testing. The tests include HAST, TCT temperature cycling, tinning, peel strength, and impedance testing, covering key indicators such as interlayer insulation, line-to-line insulation, via insulation, conduction chain reliability, and high-speed signal transmission. By cross-referencing data from different test pieces on the same substrate, the overall reliability of the material under different aperture, via spacing, and layer count conditions can be accurately evaluated. This method is applicable to IC carrier board materials with 1-8 layer structures, 50-200μm apertures, and 100-500μm via spacing, enabling multi-functional testing on a single substrate.

An Al bonding wire or Al bonding strip is provided that exhibits excellent high-speed temperature cycling reliability in high-speed temperature cycling tests required for next-generation SiC power semiconductors with high upper temperature limits. The Al bonding line or Al bonding band contains 3.0% by mass or more and 20.0% by mass or less Si. A closed curve representing the outer periphery of a section perpendicular to the central axis of the Al bonding line or Al bonding band is designated as S0. A closed curve of similar shape, which is 2 / 3 times that of S0, is designated as S1. A closed curve of similar shape, which is 1 / 3 times that of S0, is designated as S2. S0, S1, and S2 are configured such that their centroids coincide with the centroid of the section perpendicular to the central axis of the Al bonding line or Al bonding band. The region enclosed by S0 and S1 is designated as the surface portion, and the region enclosed by S2 is designated as the core portion. When the volume fraction of voids in the core with an equivalent sphere diameter of 1 μm or more and less than 10 μm, as determined by X-ray CT analysis, is designated as Rd, and the volume fraction of voids in the surface portion with an equivalent sphere diameter of 1 μm or more and less than 10 μm is designated as Rf, the ratio (Rf / Rd) is 0.005 or more and 0.50 or less.

This invention relates to the field of display screen technology, specifically to a production and testing system for a full-color composite glass substrate display screen. First, it simulates full-spectrum natural light at different times within a controlled comprehensive environmental simulation chamber, collecting optical response data. Then, it analyzes brightness and contrast characteristics, temperature drift response under temperature cycling, and establishes a light-temperature coupling model to identify sensitive areas. For high-risk areas, it conducts splicing visual continuity testing, and screens severely defective areas for accelerated aging tests. Finally, it determines the failure risk through a sealing reliability assessment model and classifies environmental tolerance into three levels based on optical performance degradation data and risk level. This system integrates multi-physics field collaborative simulation, high-precision data acquisition, and intelligent algorithm analysis to achieve comprehensive testing of the display screen's optical performance, thermal stability, splicing consistency, and sealing reliability, providing precise quality judgment criteria for different application scenarios.

An Al bonding line or Al bonding strip is provided to meet the requirements of next-generation SiC power semiconductors, exhibiting excellent temperature cycling reliability even in long-cycle temperature cycling tests. The Al bonding line or Al bonding strip contains 3.0% to 20.0% by mass of Si. When measuring the crystal orientation of the Al phase in the L-section (including the section along the central axis) of the Al bonding line or Al bonding strip, the orientation ratio of <110> crystal orientations with an angle difference of 15° or less relative to the direction perpendicular to the central axis (ND direction) is 10% to 40%, and the orientation ratio of <100> crystal orientations with an angle difference of 15° or less relative to the direction parallel to the central axis (RD direction) is 15% to 50%.

The utility model discloses a kind of temperature cycling temperature control system and its low-temperature cold source unit, cold source valve box is equipped with the first regenerative outlet and first cold quantity import respectively with refrigerator input end and output end connection, regenerator, first outlet switch valve V13 and first import switch valve V14 are equipped in cold source valve box, first vacuum pump is used to vacuumize cold source valve box, first regenerative outlet is connected in proper order high temperature passage of regenerator, circulating pump, first buffer tank, low temperature passage of regenerator and first import switch valve V14. Through the above optimization design, main pipeline is arranged in cold source valve box, and the inside of valve box is evacuated to form vacuum environment, reduce the convection heat transfer of residual gas molecules in pipeline, reduce the heat leakage of low-temperature working medium, ensure the back gas low-temperature temperature of nitrogen, to maximize the realization of cold quantity recovery and energy saving utilization, simultaneously, buffer tank is set in the inlet end of circulating pump, guarantee the pressure stability of pipeline system, reduce the fluctuation of pipeline system pressure.

This invention provides an Al bonding line or Al bonding strip that exhibits good temperature cycling reliability and good first-joint strength, as required in next-generation SiC power semiconductor devices, even during high-temperature temperature cycling tests. The Al bonding line or Al bonding strip contains 3.0% by mass or more and 20.0% by mass of Si. When the Si concentration (atomic %) in the depth direction from the surface of the Al bonding line or Al bonding strip is measured by X-ray photoelectron spectroscopy (XPS), the ratio of the average Si concentration Ca in region a (depth of 5 nm to 50 nm from the surface) to the average Si concentration Cb in region b (depth of 800 nm to 1200 nm from the surface) is 0.03 or more and 0.5 or less.

This utility model discloses a BGA device adhesive dispensing protection device to prevent solder joint contamination, belonging to the field of electronic assembly technology. It solves the problem in existing technologies where epoxy adhesive easily flows and contaminates BGA solder joints during the corner dispensing and reinforcement process. The device includes four L-shaped peripheral limiting structures positioned around the four corners of the BGA device. Each peripheral limiting structure has protrusions at both ends that are detachably connected to side baffles. This utility model uses detachably connected peripheral limiting structures and side baffles to form L-shaped grooves for accommodating adhesive, effectively protecting the BGA device solder joints and preventing adhesive from flowing into the bottom of the BGA device and contaminating the solder joints. This avoids thermal fatigue failure of BGA device solder joints under temperature cycling conditions due to the mismatch of thermal expansion coefficients of different materials.

This invention provides a pressure sensor media isolation packaging structure and packaging method. It involves setting a pressure chip and a substrate for supporting the pressure chip. The pressure chip and the substrate are fixedly connected by solder balls, forming a receiving space between them. The substrate has injection holes through which protective adhesive is injected into the receiving space until it covers the solder balls. Specifically, this reduces the difficulty of the dispensing process, minimizes the stress caused by excessive adhesive climbing on the sidewalls, and enhances the product reliability during high and low temperature cycling.

An Al bonding wire or Al bonding strip is provided, which exhibits excellent high-speed temperature cycling reliability, even in the long-cycle high-speed temperature cycling tests required for next-generation SiC power semiconductors. This Al bonding wire or Al bonding strip contains 3.0% by mass to 20.0% by mass of Si, and when measuring the crystal orientation of the Al phase in the L-section (i.e., the section including the central axis) of the Al bonding wire or Al bonding strip, the angle difference relative to the direction parallel to the central axis (RD-direction) is 15° or less. <100> The orientation ratio of the crystal orientation is 15% to 50%. When the number of Si phases with an equivalent circle diameter of 0.5μm to 0.8μm in the L section is set as Ns and the number of Si phases with an equivalent circle diameter of 0.5μm or more in the L section is set as Nc, the ratio of Ns to Nc [Ns / Nc×100(%)] is 30% to 95%.

This application discloses a multi-field coupled monitoring system and method for the self-healing process of cracks in barrier materials, relating to the field of seepage-proof barrier materials. A hydraulic device is located at the bottom of the pressure chamber's inner cavity, and a reaction frame is located at the top of the pressure chamber. A temperature control coil is installed on the inner wall of the pressure chamber, connected to an external high-low temperature circulating bath via a temperature control circulation pipeline to regulate the sample temperature and conduct freeze-thaw cycle tests. The pressure chamber is connected via pipeline to an external storage tank containing seepage solution, which is pumped into the sample by a constant flow injection pump. Pressure sensors and flow meters monitor the seepage parameters inside the sample. Several ultrasonic transducers are distributed on the outer wall of the pressure chamber to monitor changes in the internal crack structure of the sample. Fiber optic sensors are pre-embedded on both sides of the crack to monitor strain changes near the crack. This scheme can conduct experiments under multi-field coupled conditions such as loading, seepage, and temperature cycling, achieving comprehensive monitoring of the crack seepage-reaction-structural evolution process.

A connector for use in an ultra-high vacuum system is disclosed herein. The connector has a metal conduit section with a first hardness, a metal fitting with a second hardness greater than the first hardness, and a metallic reaction-inhibiting barrier positioned between the conduit section and the fitting to sealingly attach the fitting to the conduit section. In some embodiments, application of a mechanical stressor such as stretching or treatment with a mechanical oxide disruptor removes oxide from and prevents oxide re-formation on the faying surface of the conduit section. In alternate embodiments, oxide is removed from the faying surface of the conduit section and oxide re-formation is subsequently prevented by applying an oxide inhibitor. The reaction-inhibiting barrier substantially inhibits metallic and chemical interaction between the conduit section and the fitting under ultra-high vacuum, temperature cycling, mechanical stress, and reactive chemical conditions, as are present during manufacturing.

The application provides a method for improving the repetition accuracy of a piezoelectric deflection mirror, at least one temperature cycle is performed on the piezoelectric deflection mirror, and the parameter change amount of a parameterized mapping relationship model in adjacent two cycles is used as a criterion to determine whether it is less than or equal to a preset threshold value, so that the stress is fully released and the model parameters are stable; the model describes the mathematical relationship between the deflection angle and the drive code value, and the parameters change with the temperature. The drive code value, the strain gauge acquisition code value and the actual deflection angle at different temperature points are collected, the drive code value-deflection angle relationship curve and the acquisition code value-deflection angle relationship curve are fitted to establish a static temperature mapping. At least one temperature point, the data is collected multiple times at a predetermined time interval, the curve fitting of each parameter in the model with time is performed, the parameter change prediction curve is obtained, and the time-varying law of aging and performance attenuation is revealed. The model parameters are dynamically updated in combination with the above curve, and the errors caused by the temperature change and the time cumulative parameter change are compensated.

This application discloses a method and apparatus for verifying the fatigue life of a superconducting magnet. The method includes: acquiring the total stress amplitude of the superconducting magnet, which is composed of the thermal stress amplitude caused by temperature cyclic loading and the stress amplitude caused by mechanical cyclic loading; and then performing a fatigue life verification operation on the superconducting magnet based on the acquired total stress amplitude. This method integrates the stress amplitudes corresponding to temperature cyclic loading and mechanical cyclic loading to form a total stress amplitude reflecting the actual stress state of the superconducting magnet. Based on this, fatigue life verification can fully consider the combined influence of two key loads on the fatigue damage of the superconducting magnet, avoiding the one-sided results caused by verification based solely on a single load stress. Its technical effect is to make the fatigue life verification more closely match the actual stress scenario of the superconducting magnet, effectively improving the accuracy and reliability of the verification results, and providing more scientific technical support for the fatigue life assessment of superconducting magnets.

This invention discloses a sintering control process for improving the lead and cadmium leaching rate of ceramic glazes, relating to the field of daily-use ceramic manufacturing technology. The process includes: determining the characteristic dielectric frequency of the glaze to be fired at its critical melting temperature, where the characteristic dielectric frequency corresponds to the frequency of synergistic polarization between lead or cadmium ions and glass network forging ions; heating the product to the critical melting temperature and holding it at that temperature, applying an intermittent pulsed electric field with a frequency equal to the characteristic dielectric frequency; after stopping the electric field, subjecting the glaze melt to temperature cycling treatment, applying periodic temperature fluctuations at a reference temperature; and after the last half-cycle of cooling, rapidly cooling through the glass transition temperature zone, followed by slow cooling to room temperature. This invention, through the synergistic control of characteristic frequency electric field writing, temperature cycling screening, and gradient rapid freezing, significantly reduces the lead and cadmium leaching rate of the glaze surface without changing the glaze formulation, increasing the maximum firing temperature, or extending the production cycle.

This invention relates to an insulator temperature cycling test device, belonging to the field of power equipment testing technology. It includes a main body with a controller installed on its side wall for adjusting temperature and test cycles. A top cover is installed on the top of the main body, and a transfer mechanism is located inside the top cover. Below the transfer mechanism is a basket for placing insulators. This insulator temperature cycling test device can achieve self-adaptive support based on the insulator's own weight, enabling tool-free rapid clamping and positioning of the insulator, effectively preventing shaking or collision of the insulator during testing and transfer. Simultaneously, it can push the medium to fill the gaps in the insulator skirts and expel residual air, ensuring sufficient contact and uniform heat conduction between the insulator and the medium. Furthermore, during tank switching, it quickly flushes out residual medium of different temperatures within the skirts, avoiding uneven thermal stress that could cause insulator breakage and improving the accuracy of test data.