151results about How to "Reduce surface defects" patented technology

The invention provides an electromagnetic field composite powder feeding type plasma arc additive manufacturing formability regulation and control method and system, and relates to the technical field of plasma arc additive manufacturing. The flowing direction and speed of liquid metal in a molten pool in the deposition process are regulated and controlled through the target composite electromagnetic field, and the morphology and the internal organization structure of a deposition layer are controlled; in the process of regulating and controlling the liquid metal in the molten pool, process parameters and molten pool dynamic image data in the deposition process are collected in real time, and a pre-trained state recognition model is used for conducting self-adaptive adjustment on the process parameters of a subsequent deposition layer; and after deposition of each layer is completed, a laser scanning system is adopted for measuring the actual geometric size and surface appearance of the deposition layer, deposition manufacturing of the next layer is executed based on the optimized composite electromagnetic field control parameters, the corrected layered slicing data and the process path, and the execution is executed circularly till manufacturing of the whole workpiece is completed.

The invention belongs to the technical field of perovskite solar cells, and particularly discloses a carbazolyl conjugate enhanced self-assembled monomolecular layer and a preparation method and application thereof, and the self-assembled monomolecular layer takes carbazole as a substrate and an aromatic ring as a conjugate linking group. The highly conjugated molecular system can induce molecular orbital overlap, increase dipole moment, promote formation of a compact self-assembled monomolecular film, reduce interface non-radiative recombination and enhance hole extraction and transmission performance. Meanwhile, phosphoric acid is used as an anchoring group, so that firm self-assembly of SAM molecules on the surface of the ITO substrate can be realized. The SAM material is simple in preparation method, high in yield, low in preparation cost and good in stability. When the compound is applied to a trans-perovskite solar cell as a hole transport layer, photoelectric conversion efficiency exceeding 24.6% can be obtained, and the compound is an organic semiconductor material with a very good prospect.

The embodiment of the invention relates to the field of solar cells, provides a solar cell and a preparation method thereof, and at least can solve the problem that the performance of a fragmented cell is poor. The solar cell comprises fragmented cells, at least two fragmented cells are formed by segmenting the same whole solar cell along a first direction, and each fragmented cell comprises a first surface, a second surface and a third surface connected with the first surface and the second surface, the first surface is a partial area of the front surface of the whole solar cell, the second surface is a partial area of the back surface of the whole solar cell, and the third surface is a cross section of the fragmented cell after segmentation processing; the crystalline silicon layer is positioned on the third surface; the silicon oxide layer is positioned on the surface of the crystalline silicon layer; and the metal oxide layer is positioned on the silicon oxide layer.

The invention relates to the technical field of nodular cast iron, in particular to a silicon-molybdenum-chromium-nickel-niobium nodular cast iron material and a preparation method thereof. The material comprises the following chemical components in percentage by mass: 3.0%-3.5% of carbon, 4.3%-4.7% of silicon, 0.1%-0.3% of manganese, less than or equal to 0.05% of phosphorus, less than or equal to 0.02% of sulfur, 0.7%-1.0% of molybdenum, 0.6%-0.8% of chromium, 0.4%-0.7% of nickel, 0.3%-0.6% of niobium, 0.03%-0.06% of magnesium, 0.05%-0.1% of rare earth, 0.006%-0.012% of antimony and the balance of iron. The preparation method comprises the steps of smelting, first-time spheroidizing and inoculation, second-time spheroidizing, second-time inoculation and heat treatment in sequence. According to the obtained nodular cast iron material, the form of graphite and the number of graphite nodules are improved, carbon elements are separated out as many as possible in the form of high-carbon phase-spheroidal graphite, generation of pearlite is reduced, and the mechanical strength and high-temperature resistance of nodular cast iron are improved.

The invention relates to the technical field of coating materials, in particular to an anti-corrosion epoxy composite coating and a preparation method thereof. The anti-corrosion epoxy composite coating is prepared from the following raw materials in parts by mass: 40 to 60 parts of epoxy resin, 10 to 20 parts of alkoxy silane, 4 to 6 parts of pigment, 1 to 4 parts of auxiliaries, 2 to 6 parts of solvents, 14 to 18 parts of hexagonal boron nitride type preservatives and 10 to 30 parts of curing agents, and the hexagonal boron nitride type preservatives contain hexagonal boron nitride and polythiophene. According to the anti-corrosion epoxy composite coating, the defect that hexagonal boron nitride particles are prone to agglomeration can be overcome, and the anti-corrosion epoxy composite coating has more excellent anti-corrosion performance.

The invention relates to the technical field of steel pipe safety production, in particular to a seamless steel pipe production detection system and method based on a bent shell screw drill, and the system comprises a production process detection module, a steel pipe quality detection module and a quality detection platform, the production process detection module is used for processing to obtain a seamless steel tube production process abnormal evaluation value; the steel pipe quality detection module is used for processing to obtain a seamless steel pipe surface quality evaluation value and a seamless steel pipe internal quality evaluation value; according to the seamless steel pipe production detection system based on the bent shell screw drill and the production method, the abnormities in the production process of the seamless steel pipe, the number of early warning times and the surface quality and the internal quality of the seamless steel pipe are comprehensively analyzed; quality control can be carried out more effectively, production parameters are adjusted in time, defects are reduced, and therefore the product quality is improved.

The invention belongs to the field of new energy materials and devices, and particularly discloses nitrogen self-doped phenolic resin-based hard carbon microspheres and a preparation method and application thereof.The preparation method comprises the following steps that nitrogen-containing phenol monomers, aldehyde monomers and a basic catalyst are mixed according to a certain sequence, and after prepolymerization is conducted at the low temperature, the nitrogen self-doped phenolic resin-based hard carbon microspheres are obtained; carrying out high-temperature hydrothermal reaction to obtain phenolic resin microspheres; and sequentially carrying out low-temperature carbonization treatment and high-temperature carbonization treatment to obtain the nitrogen self-doped phenolic resin-based hard carbon microspheres. Compared with the existing nitrogen-doped resin hard carbon preparation method, the nitrogen-self-doped phenolic resin hard carbon has the advantages that a nitrogen source is introduced into the phenolic resin hard carbon from the source end of the resin, the production process is simplified, and uniform distribution and atomic-scale doping of the nitrogen element are realized. The material is used for sodium ion batteries, has excellent long cycle stability, good rate capability and high specific capacity, and has industrial application prospects.

The invention provides a modified silicone oil agent with a comb-shaped structure as well as a preparation method and application thereof, the oil agent comprises an amino modified silicone oil emulsion and an epoxy modified silicone oil emulsion, and the mass ratio of the amino modified silicone oil emulsion to the epoxy modified silicone oil emulsion is 1: (0.5-1.5); the amino modified silicone oil emulsion and the epoxy group-containing modified silicone oil emulsion have comb-shaped structures, main chains of the amino modified silicone oil and the epoxy group-containing modified silicone oil are acrylate polymers, and branch chains are amino short silane chains or epoxy group-containing short silane chains; the preparation method of the oiling agent comprises the following steps: respectively preparing amino short-chain silicone oil and epoxy group-containing short-chain silicone oil, and then respectively synthesizing amino modified silicone oil emulsion and epoxy group-containing modified silicone oil emulsion. The acrylate polymer is introduced, the content of organic silicon is reduced, the viscosity of the oiling agent is small, carbon fibers are conveniently oiled, a protective film is formed on the fibers, friction and abrasion between the fibers are prevented, and therefore the surface defects of the carbon fibers are reduced.

The invention discloses a gallium oxide Schottky diode with a passivated two-dimensional semimetal insertion layer and a preparation method thereof, and the gallium oxide Schottky diode comprises a substrate which is made of N-type heavily doped beta-Ga2O3 with different crystal orientations; the epitaxial layer is located on the substrate; wherein the material of the epitaxial layer is N-type unintentionally doped beta-Ga2O3; the two-dimensional semimetal growth insertion layer is located on the epitaxial layer; the protection layer is located on the two-dimensional semimetal growth insertion layer, and the orthographic projection of the protection layer and the orthographic projection of the two-dimensional semimetal growth insertion layer are overlapped in the direction perpendicular to the substrate; the terminal structure is located on the epitaxial layer, the terminal structure is of an annular structure, and the terminal structure is arranged around the two-dimensional semimetal growth insertion layer and the protection layer; the anode covers the protective layer and a part of the terminal structure; and the cathode is positioned on one side, deviating from the epitaxial layer, of the substrate. According to the beta-Ga2O3-based SBD device provided by the invention, the two-dimensional material can adjust the energy band of the Ga2O3 surface by virtue of the inherent Van der Waals surface, and endow the Schottky barrier with extremely strong flexibility.

The invention provides a gallium oxide ultraviolet detector based on a difunctional self-assembly passivation layer and a preparation method thereof, the gallium oxide ultraviolet detector comprises a substrate layer, an oxidant layer and the difunctional self-assembly passivation layer which are arranged from bottom to top, and two sides of the difunctional self-assembly passivation layer are provided with metal electrodes in contact with a gallium oxide layer. Wherein the bifunctional self-assembly passivation layer comprises a first passivation layer and a second passivation layer which are arranged from bottom to top, the passivation material of the first passivation layer is a material for reducing surface defects of the gallium oxide layer, and the passivation material of the second passivation layer is a material for enhancing the ultraviolet photon absorption rate. Passivation materials with different functions are combined to form the dual-function self-assembly passivation layer, and the dual-function self-assembly passivation layer is adopted to perform passivation treatment on the gallium oxide ultraviolet detector, so that the performance of the gallium oxide ultraviolet detector is jointly improved from two aspects of reducing surface defects of gallium oxide and enhancing ultraviolet photon absorption.

The invention relates to a high-strength tungsten alloy ultra-fine wire drawing device, comprising a traction structure and a drawing structure, wherein the traction structure comprises an inner winding piston, an outer electromagnetic coil, a linear guide rail and a clamp; the drawing structure comprises a clamping jaw, an electromagnetic valve and an eye mold; the inner winding piston and the outer electromagnetic coil are both sleeved on the linear guide rail, and the outer electromagnetic coil is sleeved on the outside of the inner winding piston, and the outer electromagnetic coil is fixed on the linear guide rail through a clamp, and the inner winding piston is provided with an inner electromagnetic coil; the eye mold is arranged on one side of the linear guide rail, the clamping jaw is fixedly installed on the inner winding piston, and the clamping jaw is connected to the electromagnetic valve, the tungsten wire is fixedly clamped by the clamping jaw after passing through the eye mold, and the opening and closing of the clamping jaw is controlled by the electromagnetic valve. The purpose of the invention is to provide a high-strength tungsten alloy ultra-fine wire drawing device, aiming at the existing technology of online heating tower wheel type slip differential drawing, and solving the defect caused by the sliding friction between the tower wheel and the metal filament in the tower wheel type slip differential drawing.

The invention relates to a perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite layer, an electron transport layer and a metal electrode which are arranged in sequence, the material of the passivation layer is selected from one or more of mercaptoethylamine, ethylenediamine and propylamine; and the thickness of the passivation layer is 1 nm to 10 nm. Through the introduction of interface passivator molecules, the interface between the hole transport layer and the perovskite layer is improved. The surface wettability of the PTAA thin film is enhanced, so that the perovskite precursor solution can form a uniform and compact perovskite layer on the PTAA / SCAs thin film, the carrier separation and transmission efficiency at an interface is improved, and the stability of a device is enhanced.

The invention discloses a glass fiber reinforced halogen-free flame-retardant high glowing filament PBT (polybutylene terephthalate) modified material and a preparation method thereof, and the glass fiber reinforced halogen-free flame-retardant high glowing filament PBT modified material comprises the following components in parts by weight: 28.5-44.5 parts of PBT resin, 0-10 parts of PET (polyethylene terephthalate) resin, 18-25 parts of a compound of organic hypophosphite and inorganic hypophosphite, 5-14 parts of a glowing filament synergist and 1-5 parts of a modified toughening agent, the invention relates to the technical field of high polymer materials, in particular to a high polymer material which comprises the following components in parts by weight: 0.1-0.5 part of an anti-transesterification agent, 0.2-1 part of an antioxidant, 0.2-1 part of a lubricant and 15-30 parts of glass fibers. The glowing filament has high mechanical properties and good fireproof performance, can meet the market demand that the glowing filament at 750 DEG C is not ignited in the whole process, meets the latest environment-friendly control requirement on the market, and has wide market application prospects.

The invention relates to the technical field of high-wear-resistance alloys, and particularly discloses a preparation method of a high-wear-resistance alloy steel lining plate. The preparation method comprises the following steps that S1, an alloy steel lining plate is placed in a plating solution to be electroplated, and an alloy steel lining plate A with a plating layer A on the surface is obtained; the plating solution comprises the following raw materials: 45-60 g / L of sodium citrate dehydrate, 30-35 g / L of boric acid, 5-8 g / L of ammonium chloride, 80-100 g / L of nickel aminosulfonate, 180-200 g / L of iron aminosulfonate, 0.5-0.8 g / L of lauryl sodium sulfate, 2-5 g / L of modified boron nitride and the balance of deionized water. S2, an alloy steel lining plate A is taken, the surface of the alloy steel lining plate A is plated with a transition metal boride layer through arc ion plating, the transition metal boride layer serves as a plating layer B, and an alloy steel lining plate B is obtained; and S3, the alloy steel lining plate B is taken, boronizing is conducted after annealing, and the high-wear-resistance alloy steel lining plate is obtained.

The invention provides a heterojunction cell, a preparation method thereof and a photovoltaic module, and relates to the technical field of solar cells. The heterojunction cell comprises N-type substrate silicon; the first side surface of the N-type substrate silicon comprises a first silicon oxide layer, a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, an aluminum oxide layer, a first transparent conductive layer and a first grid line electrode which are stacked in sequence; the second side face of the N-type substrate silicon comprises a second silicon oxide layer, a second intrinsic amorphous silicon layer, an N-type amorphous silicon layer, a third silicon oxide layer, a second transparent conductive layer and a second grid line electrode which are sequentially stacked. The first silicon oxide layer and the second silicon oxide layer are respectively combined with the corresponding intrinsic amorphous silicon to form a composite tunneling structure, so that the bottom layer interface recombination can be effectively reduced, and the open-circuit voltage of the heterojunction cell is improved; the aluminum oxide layer and the third silicon oxide layer are introduced as local passivation layers, so that the surface recombination of the heterojunction cell can be effectively reduced under the condition of thinning the silicon wafer, and the photoelectric conversion rate of the heterojunction cell is greatly improved.

The invention is suitable for the technical field of luminescent materials, and provides a multi-structure coordinated regulation efficient stable CsPbI3 nanorod and a preparation method and application thereof.The preparation method comprises the following steps that octadecene, oleic acid and cesium carbonate are heated in the inert gas atmosphere and stirred till a solution is dissolved, and a precursor solution is obtained; the preparation method comprises the following steps: adding lead iodide, nitrate, oleic acid and oleylamine into a container filled with octadecene, exhausting gas, introducing inert gas, heating, and stirring to obtain a clear and transparent solution; heating, and injecting the precursor solution in the step 1 into the clear and transparent solution in the step 2; and carrying out heat preservation at first, then rapidly cooling to room temperature, and then centrifugally dispersing into a non-polar solvent to obtain the CsPbI3 nanorod. The method is simple to operate and low in energy consumption, and the red light CsPbI3 perovskite nanocrystal is stable in sample phase, narrow in half-peak width, high in luminous color purity, few in surface defect, high in quantum efficiency and high in carrier transport capacity, and can be applied to the fields of LEDs, solar cells, photoelectric detectors and the like.

The invention provides a chemical mechanical polishing system and method. The system comprises a flattening module and a cleaning module, wherein the flattening module and the cleaning module are arranged in parallel; the planarization module comprises at least one planarization unit, and the planarization unit is used for grinding the fed wafer; the cleaning module comprises a rolling brush cleaning unit, a surface modification unit and a single-piece cleaning unit which are arranged in sequence; the rolling brush cleaning unit is used for carrying out physical cleaning and chemical cleaning on the ground wafer; the surface modification unit is used for performing plasma bombardment on the surface of the cleaned wafer so as to generate hydrophilic functional groups on the surface of the wafer; and the single wafer cleaning unit is used for cleaning and drying the modified wafer. According to the invention, the hydrophobic surface of the wafer after CMP can be effectively cleaned and dried, the cleaning and drying efficiency is improved, and the surface defects of the wafer are reduced.

The invention provides an automatic bolt cold heading device and technology, and relates to the technical field of bolt machining, the automatic bolt cold heading device comprises a supporting seat, a supporting frame and a conveyor, the top of the supporting seat is in bolted connection with a feeding frame, a sliding groove is formed in the top of the feeding frame, and the top of the feeding frame is in sliding connection with a sliding induction plate; a sliding induction plate is installed at the bottom of the feeding frame, infrared scanning devices are installed on one side of the bottom of the sliding induction plate, feeding openings are formed in the middle of the front face of the feeding frame, and the number and the position of the feeding openings correspond to those of the infrared scanning devices. Manual intervention is greatly reduced, the production efficiency is improved, the labor intensity is reduced, the width detection unit can accurately measure the width of the bolt raw material, the telescopic air cylinder adjusts the clamping force according to the width, it is ensured that the bolt raw material is effectively clamped by the conveying grinding wheel, and the feeding precision is improved.

The invention discloses a non-sheath preparation method and application of a Ti2AlNb-based alloy plate, and belongs to the technical field of titanium alloy plate preparation. The invention relates to a non-sheath preparation method of a Ti2AlNb-based alloy plate, which comprises the following steps: smelting a Ti2AlNb alloy raw material to obtain a Ti2AlNb cast ingot, carrying out near-isothermal cogging forging on the Ti2AlNb cast ingot in a B2 phase region, and then carrying out near-isothermal multidirectional forging in an alpha < 2 + > B2 phase region to obtain a forged cake; and the forging cake is subjected to heat treatment in an alpha < 2 + > O + B2 phase region and an O + B2 phase region in sequence, then non-sheathed hot rolling is conducted in the alpha < 2 + > O + B2 phase region or the alpha < 2 + > B2 phase region, and the Ti2AlNb-based alloy plate is obtained. According to the method, the Ti2AlNb-based alloy plate which is good in surface quality, free of edge cracks, excellent in plate shape and excellent in mechanical property can be prepared under the condition of no wrapping sleeve.

The invention relates to the field of semiconductor material molecular beam epitaxial growth manufacturing, and discloses a method for controlling As background pressure to reduce InAs / GaSb surface defects, which comprises the following steps: S1, substrate preparation and pretreatment: selecting a proper GaSb single crystal substrate, and carrying out selection, cleaning, degassing and deoxidation treatment on the GaSb substrate; s2, carrying out epitaxial growth of a GaSb buffer layer, and carrying out epitaxial growth of the GaSb buffer layer on the processed GaSb substrate; s3, control of As background pressure intensity: in the growth process of the GaSb buffer layer, the As background pressure intensity in the cavity is controlled and stabilized by adjusting the opening degree of an As needle valve; s4, growth of an InAs / GaSb superlattice: growing an InAs and GaSb superlattice structure layer by layer under the condition of well controlled As background pressure intensity. By accurately controlling the As background pressure intensity, the'bright spot 'defect and other surface defects formed on the InAs / GaSb surface can be effectively reduced, and the surface quality of the superlattice material is improved.

The invention discloses a method for controlling the C-shaped warping defect of eighteen-roller single-stand high-strength steel, and belongs to the technical field of solving the C-shaped warping defect of a steel plate. The method comprises the following steps: carrying out hot rolling, acid pickling and eighteen-roller reversible rolling on a descaled plate blank of a casting blank, the roller diameter difference between the upper roller diameter and the lower roller diameter of the middle roller of the eighteen-roller reversible rolling mill ranges from 2 mm to 5.5 mm, and the lower roller diameter is larger than the upper roller diameter. According to the method for controlling the C-shaped warping defect of the eighteen-roller single-stand high-strength steel, the roughness of the working rollers, the roller diameter difference of the middle rollers, the rolling force of the rolling mill and the strip steel tension are strictly controlled, the plate shape and stress problems in the rolling process are effectively controlled, and finally the warping height is controlled to be within the range of + / -(0.35-0.5) mm / m.

The invention provides an oiling agent for carbon fibers as well as a preparation method and application thereof, the oiling agent comprises an amino modified silicone oil emulsion and an epoxy modified silicone oil emulsion, and the mass ratio of the amino modified silicone oil emulsion to the epoxy modified silicone oil emulsion is 1: (0.5-1.5); the amino modified silicone oil and the epoxy group-containing modified silicone oil are comb-shaped in structure, main chains of the amino modified silicone oil and the epoxy group-containing modified silicone oil are acrylate polymers, and branch chains of the amino modified silicone oil and the epoxy group-containing modified silicone oil are amino short silane chains or epoxy group-containing short silane chains; the preparation method of the oiling agent comprises the following steps: firstly, preparing an acrylate prepolymer by a solvent polymerization method, then respectively preparing amino modified silicone oil and epoxy group-containing modified silicone oil, and finally respectively carrying out water emulsification. The acrylate polymer is introduced into the oiling agent provided by the invention, so that the silicon content is reduced, the viscosity of the oiling agent is reduced, carbon fibers are conveniently oiled, a protective film is formed on the fibers, friction and abrasion between the fibers are prevented, and the surface defects of the carbon fibers are reduced.

The invention relates to the technical field of photoelectric devices, in particular to a perovskite thin film and a preparation method thereof, a perovskite precursor solution, a photoelectric device and an electric device. According to the perovskite thin film provided by the invention, the perovskite thin film comprises an ABX3 type perovskite material and a cross-linked polymer, and the cross-linked polymer is a polymer obtained by cross-linking an ether-containing amide monomer. The cross-linked polymer contained in the perovskite thin film provided by the invention can effectively passivate surface defects of the perovskite thin film so as to improve thermal stability and photoelectric properties of the perovskite thin film.

The invention discloses a plate processing technology, and aims to provide a plate arc-shaped surface processing method which is characterized by comprising the following steps: S1, plate pretreatment; s2, plate heating; s3, preparing a bending die; s4, the plates are placed and pressurized; s5, bending processing is carried out; s6, cooling treatment; s7, surface quality detection; s8, size detection; s9, post-processing the plate; and S10, final detection and packaging. Compared with the prior art, the plate arc-shaped surface machining method has the advantages that high-quality arc-shaped surface machining of the plate can be effectively realized; through a series of process steps of systematic pretreatment, heating, bending, cooling and the like on the plate, it is guaranteed that the plate does not deform or crack in the machining process, and the surface quality and the size precision of the bent plate can also be guaranteed; the invention is suitable for the technical field of plate processing.

The invention relates to the technical field of solar cells, and provides a back contact solar cell piece, a cell assembly and a photovoltaic system, a silicon substrate of the back contact solar cell piece is provided with a front surface and a back surface which are opposite, and the back surface comprises a first area, a second area and a spacing area located between the first area and the second area. The first hybrid doping layer is disposed on the front surface of the silicon substrate, and the second hybrid doping layer is disposed on the spacer region. Doping elements in the first mixed doping layer and the second mixed doping layer comprise at least one of third main group elements, at least one of fifth main group elements and an oxygen element, and the doping concentration of the doping elements in the first mixed doping layer and the second mixed doping layer is larger than that of the corresponding doping elements in the silicon substrate. Therefore, the surface defects of the silicon substrate can be reduced, the bulk mass of the silicon substrate is effectively improved, and the performance of the back contact solar cell is improved.

The invention provides a medium-voltage device and a forming method thereof, and the method comprises the steps: forming a first gate oxide layer through employing an ISSG technology, and enabling the first gate oxide layer to cover a substrate; and then a second gate oxide layer is formed by adopting an ALD process, the second gate oxide layer covers the first gate oxide layer and the shallow trench isolation structure, and the first gate oxide layer and the second gate oxide layer jointly form a gate oxide layer. According to the invention, the surface defects of the substrate can be repaired while the first gate oxide layer is formed by adopting the ISSG process; the sum of the thickness of the first gate oxide layer formed by the ISSG process and the thickness of the second gate oxide layer formed by the ALD process can reach the target thickness of the gate oxide layer, and the defect that the target thickness of the gate oxide layer cannot be achieved through one-step growth in the ISSG process is overcome. And the second gate oxide layer formed by adopting the ALD process is relatively good in uniformity and compactness and low in thermal budget, the thickness of the second gate oxide layer is relatively accurately controlled, and the reliability of the medium-voltage device is improved.

This invention discloses a manufacturing process for composite 7-series aluminum alloy sheets. The composite 7-series aluminum alloy sheets are formed by laminating and rolling multiple layers of 7-series aluminum alloy sheets and multiple layers of 1-series aluminum alloy connecting plates. The 7-series aluminum alloy sheets are composed of the following components by weight percentage: Si: ≤0.22%, Cr: ≤0.23%, Fe: ≤0.35%, Cu: 2.0-3.5%, Mg: 3.5-4.5%, Zn: 6.5-10.0%, Ti: 0.015-0.2%, Zr: 0.05-0.15%, rare earth cerium alloy: 0.015-0.05%, total impurities ≤0.1%, and the remainder being aluminum. This invention uses a lamination method to roll multiple layers of 7-series aluminum alloy sheets and multiple layers of 1-series aluminum alloy connecting plates, which effectively improves plasticity, toughness, and strength. Compared with existing single 7-series materials, it has higher material strength, better impact resistance and weldability, can adapt to corrosion resistance in complex environments, and extends service life.

The invention is applicable to the technical field of luminescent materials, and provides a long-wavelength ultra-wideband sulfide near-infrared luminescent material and a preparation method and application thereof, the general chemical formula of the luminescent material is Ca < 1-x > CrxS, and x is more than or equal to 0 and less than or equal to 0.125%; the preparation method comprises the following steps that raw materials are weighed according to the chemical general formula Ca < 1-x > CrxS and the molar ratio of Ca to Cr in the raw materials being 1-x: x, x is larger than or equal to 0 and smaller than or equal to 0.125%, and the raw materials are compounds containing Ca and Cr elements; the preparation method comprises the following steps: weighing raw materials, adding a dispersing agent into the weighed raw materials, fully grinding to obtain uniform white powder, pre-sintering the ground white powder at 700-800 DEG C for 2-3 hours, introducing vulcanizing gas, and sintering in a vulcanizing environment at 800-900 DEG C for 2-3 hours to obtain the long-wavelength ultra-wideband sulfide near-infrared luminescent material. The luminescent material provided by the invention is excellent in performance, can effectively meet the requirements of near-infrared LED devices, and is widely applied to the fields of modern food quality analysis, biological imaging, biomedicine and the like.

The invention particularly relates to a high-capacity amorphous carbon-based negative electrode material and a preparation method and application thereof.The preparation method comprises the steps that a large number of oxygen-containing functional groups are introduced into a crushed carbon source precursor through deep oxidation, the carbon layer spacing is enlarged, and then the disordered blocky amorphous carbon negative electrode material is obtained through high-temperature carbonization; heteroatoms introduced by the strong oxidant are converted into CH4, CO2 and other gases to leave the surface of the carbon source, so that the surface defects of the carbon source are reduced, the first coulombic efficiency is high, and the method is simple in process and can be applied to large-scale industrial production; a strong oxidant is selected to deeply oxidize a precursor, inert groups on the edge of a polygonal carbon ring can be oxidized into oxygen-containing active groups while a large number of oxygen-containing functional groups are introduced, the defects that common amorphous carbon is low in initial coulombic efficiency, low in specific capacity and poor in rate capability are further overcome, and the requirements of a lithium / sodium ion battery for a negative electrode material are met.