Polishing composite for silicon wafer polishing

A technique for polishing compositions and silicon wafers, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc. It can solve the problems of low removal rate, many metal residues, and many surface defects, and achieve High-quality polishing, fast polishing rate, and less surface defects

Inactive Publication Date: 2009-06-10
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The invention overcomes the problems of many surface defects, low removal rate, many metal residues and dif

Method used

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  • Polishing composite for silicon wafer polishing
  • Polishing composite for silicon wafer polishing
  • Polishing composite for silicon wafer polishing

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0046] Example 1

[0047] Disperse 400 g of colloidal silica with a silica content of 30% in 5464.4 g of deionized water with a stirrer, add 120 g of a 2% aqueous solution containing the polishing interface control agent dihydroxypropyl cellulose ether, and place it in the stirrer. Mix the polishing interface control agent with the colloidal silicon dioxide thoroughly; then add the surfactant DC-193 (dimethyl polysiloxane polyether copolymer) 2.4 g and the chelating agent EDTA (ethylene diamine tetraacetic acid) 1.2 g in sequence Add 12g of basic compound TETA (trivinyltetramine), and finally filter the polishing composition with a filter element with a pore size of 0.5 μm, as shown in Table 1.

Example

[0048] Examples 2~3

[0049] The preparation process is the same as in Example 1, and the amount of the 2% aqueous solution of the polishing interface control agent dihydroxypropyl cellulose ether is 180 g and 240 g, respectively, as shown in Table 1.

Example Embodiment

[0050] Example 4

[0051] The preparation process is the same as in Example 1. 400g of colloidal silica with a silica content of 30% was dispersed in 5270.6g of deionized water with a stirrer, and 2% of dihydroxypropyl cellulose ether containing a polishing interface control agent was added. 300g of the aqueous solution, in a stirrer to fully mix the polishing interface control agent and colloidal silica; then add the surfactant AEO-9 (polyoxyethylene (9) lauryl ether) 3.6g, the chelating agent TTHP (triethyl Tetraamine hexaethylene phosphonic acid) 1.8g; add two basic compounds DETA (trivinyltetraamine) and PIZ (anhydrous piperazine), respectively, 12g and 6g, and finally use a filter element with a pore size of 0.5μm The polishing composition was filtered, as shown in Table 1.

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Abstract

The invention discloses a silicon wafer polishing composition in the field of chemical mechanical polishing (CMP). The polishing composition comprises silica, a polishing interface control agent, a surfactant, a chelating agent, an alkaline compound and water, wherein the particle diameter of the silica in the polishing composition is between 1 and 200 nm; the content of the silica is between 0.05 and 50 weight percent; the polishing interface control agent is polyhydroxy cellulose ether; the content of the polishing interface control agent is between 0.001 and 10 weight percent; the content of the surfactant is between 0.001 and 1 weight percent; the content of the chelating agent is between 0.001 and 1 weight percent; the content of the alkaline compound is between 0.001 and 10 weight percent; the balance being water; and the PH value is between 8.5 and 12. The polishing interface control agent can control a polishing interface between abrasive particles and a polishing object in the chemical mechanical polishing process in order that the surface of the polished silicon wafer is more perfect. The polishing composition is in particular suitable for polishing the silicon wafer and has the advantages of rapid polishing speed, little surface defect and high planeness; and the polished silicon wafer has few metal ion contaminants and is easy to clean.

Description

technical field [0001] The invention relates to a polishing composition for silicon wafer polishing in the field of chemical mechanical polishing (CMP). Background technique [0002] Semiconductor materials, mainly silicon materials, are the most important basic functional materials in the electronic information industry, and occupy a very important position in the national economy and military industry. More than 95% of the world's semiconductor devices are made of silicon materials, and 85% of integrated circuits are also made of silicon materials. At present, IC technology has entered the era of nanoelectronics with a line width of less than 0.1 μm, and the requirements for the surface processing quality of silicon single crystal polished wafers are getting higher and higher. Traditional polishing fluids can no longer meet the requirements of silicon single wafer polishing. In order to ensure higher machining accuracy such as warpage, local surface flatness, and surface ...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/306
Inventor 潘国顺顾忠华高峰雒建斌路新春刘岩
Owner TSINGHUA UNIV
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