The present invention relates to porous WO3 sheet-like array film preparation, which comprises: firstly utilizing a
direct current reaction magnetron
sputtering method, adopting Ar gas as
sputtering gas, adopting O2 gas as reaction gas, and adopting double
metal target co-
sputtering to carry out sputtering so as to obtain an
amorphous oxide film, wherein the one target is a
tungsten target, and the other target is one selected from aluminum,
copper and
zinc; and immersing the prepared
amorphous metal oxide film in a strong acid solution to selectively etch, obtaining a sheet-like porous structure on the substrate, and annealing at a temperature of 450-550 DEG C in air so as to form monoclinic
crystal phase WO3, wherein the morphology is well preserved. According to the present invention, the porous
tungsten oxide electrode obtained through the method has characteristics of specific surface increase, substantial light absorption property improving, and good adhesion between the material and the substrate; and the preparation method of the present invention has the following advantages that: the
mass production can be achieved, the preparation process is simple, the saturated
photocurrent of the prepared WO3
electrode is increased by 3 times compared with the saturated
photocurrent of the unetched dense WO3
electrode, and the obtained sheet-like
tungsten trioxide photoelectrode can further be used for dye-sensitized solar cells,
electrochromic devices and the like.