The invention relates to a method for
laser pulse
sputtering deposition preparation of a
polycrystalline silicon thin film, wherein the method includes the following steps: pre-treating a base plate; putting a film plating material
silicon target and the base plate into a vacuum
system, vacuumizing to 1.0*10<-4> Pa, wherein the base plate temperature is 500-700 DEG C, and the distance between the base plate and the
silicon target is 3-8 cm; then taking an
excimer laser as a
laser source, emitting laser, and with the frequency of 2-5 HZ,
sputtering for 2-4 h; and finally annealing for 2-4 h at the temperature of 600-1000 DEG C, and thus obtaining the
polycrystalline silicon thin film, wherein the base plate is a
copper sheet or
quartz glass. The prepared
polycrystalline silicon thin film has fine grains and
uniform size distribution, has quite good smoothness and compactness, has a better
crystallization degree, moreover, has hardly any
impurity atoms, can produce fine grains on various base plates, and is simple in process, good in
repeatability, low in cost and suitable for industrialized production.