The invention relates to a process chamber (10) for the
vapor phase deposition of a
semiconductor layer on a substrate (2), comprising at least one conductive
carrier system (1, 1', 1'') for transportation of at least one substrate (2) in a transportation direction (9) through the process chamber (10), wherein the
carrier system (1, 1', 1'') comprises a carrier plate (4), on which the at least one substrate (2) is arranged, a device for introducing process gases into the process chamber (10), and a
heating system for resistant heating of the
carrier system (1, 1', 1'') and / or the at least one substrate (2) arranged on the carrier
system (1), wherein the carrier
system (1, 1', 1'') comprises at least two contact elements (3, 3') at diametrical sides of the conductive carrier
system (1, 1', 1'') for contacting the
heating system (11). The
heating system (11) comprises two busbars (6), at least one of which is a segmented busbars (6) having at least two segments (7, 7'), wherein at least one
contact element (3, 3') is in contact with one
busbar (6). Furthermore, the invention relates to a device and method for
vapor phase deposition of a
semiconductor layer with a process chamber and a method for heating substrates in a process chamber.