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Preparation method and application of silica sol for chemical polishing

A technology of chemical polishing and silica sol, which is applied in the direction of chemical instruments and methods, inorganic chemistry, polishing compositions containing abrasives, etc., can solve the problems of low polishing removal rate, low hardness of silica sol, poor polishing effect, etc., to achieve Cost savings and labor training costs, high polishing rate, and increased surface activation energy

Pending Publication Date: 2022-05-13
山东金亿达新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the current silica sol preparation process is used in the CMP process of integrated circuit silicon wafers, due to the low hardness of silica sol, high impurity content, and insufficient particle size, it is easy to agglomerate and other problems, resulting in low polishing removal rate and poor polishing effect. bad

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  • Preparation method and application of silica sol for chemical polishing
  • Preparation method and application of silica sol for chemical polishing
  • Preparation method and application of silica sol for chemical polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A preparation method of silica sol for chemical polishing, comprising the following steps:

[0032] (1) Put the silicon powder in a container, add water 3 times the weight of the silicon powder, add alkali with 0.5% weight of the silicon powder, heat up to 60° C. and soak for 100 minutes to obtain a pre-reacted silica sol;

[0033] (2) passing through cation and anion exchange resin columns after diluting the water glass solution to remove metal ions and miscellaneous ions to obtain an active silicic acid solution whose mass concentration is 2-5%;

[0034] (3) Add the pre-reacted silica sol to the active silicic acid solution to increase the particle size, add a modifier at the same time, continue to stir, and adjust the pH to 9-11 at the same time. The reaction time is 1 hour, and the final product silica sol is obtained after concentration.

[0035] The alkali described in step (1) is sodium hydroxide.

[0036] In step (2), the cation and anion exchange resin columns...

Embodiment 2

[0043] A preparation method of silica sol for chemical polishing, comprising the following steps:

[0044] (1) Put the silicon powder in a container, add water 5 times the weight of the silicon powder, add alkali with 1.0% weight of the silicon powder, heat up to 90° C. and soak for 120 minutes to obtain a pre-reacted silica sol;

[0045] (2) after diluting the water glass solution, pass through the cation and anion exchange resin columns to remove metal ions and heteroions to obtain an active silicic acid solution whose mass concentration is 2-5%;

[0046] (3) Add the pre-reacted silica sol to the active silicic acid solution to increase the particle size, add a modifier at the same time, continue to stir, and adjust the pH to 9-11 at the same time. The reaction time is 2 hours, and the final product silica sol is obtained after concentration.

[0047] The alkali described in step (1) is potassium hydroxide.

[0048] In step (2), the cation and anion exchange resin columns a...

Embodiment 3

[0055]A preparation method of silica sol for chemical polishing, comprising the following steps:

[0056] (1) Put the silicon powder in a container, add water 5 times the weight of the silicon powder, add alkali with 1.1% weight of the silicon powder, heat up to 110° C. and soak for 120 minutes to obtain a pre-reacted silica sol;

[0057] (2) after diluting the water glass solution, pass through the cation and anion exchange resin columns to remove metal ions and heteroions to obtain an active silicic acid solution whose mass concentration is 2-5%;

[0058] (3) Add the pre-reacted silica sol to the active silicic acid solution to increase the particle size, add a modifier at the same time, continue to stir, and adjust the pH to 9-11 at the same time. The reaction time is 3 hours, and the final product silica sol is obtained after concentration.

[0059] The alkali described in step (1) is sodium hydroxide.

[0060] In step (2), the cation and anion exchange resin columns are ...

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Abstract

The invention discloses a preparation method and application of silica sol for chemical polishing, and belongs to the technical field of semiconductor chemical polishing materials. According to the invention, silica sol granulation is carried out by adopting a method of combining a traditional silicic acid hydrolysis method and a silica powder hydrolysis method, raw materials are easy to obtain, the preparation process flow can realize mass production, equipment transformation is not needed, and the cost and manual training cost are greatly saved. In the granulation process, silicon powder is introduced as a silicon source, so that the average density of seed particles for granulation is higher, the surface activation energy is favorably increased, and the particles are favorably increased again. The prepared large-particle-size silica sol particles are higher in hardness, show higher surface energy in the terminal application process, and are higher in polishing rate and higher in particle tolerance. The average particle size of the obtained silica sol particles is about 100 nanometers, and the silica sol particles are good in stability, free of agglomeration, high in polishing speed and removal rate and capable of greatly improving the polishing efficiency when applied to chemical polishing.

Description

technical field [0001] The invention belongs to the technical field of semiconductor chemical polishing materials, and in particular relates to a preparation method and application of silica sol for chemical polishing. Background technique [0002] With the development of the semiconductor industry, the requirements for the integration and precision of integrated circuits continue to increase, and the requirements for the surface processing precision of the substrate material silicon wafer are also getting higher and higher. Silicon wafer processing must not only achieve high processing efficiency, but also achieve high surface quality. Therefore, various processing technologies, especially chemical mechanical planarization processes, are facing great challenges. [0003] Chemical mechanical polishing (CMP) is currently the most widely used semiconductor planarization technology. Its processing principle is that the surface of the workpiece reacts chemically with the polishi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/141C01B33/149C01B33/148C09G1/02
CPCC01B33/1412C01B33/149C01B33/1485C09G1/02C01P2004/51C01P2004/04
Inventor 黄培伟康利彬康东岳王俊林刘全富
Owner 山东金亿达新材料有限公司
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