37results about How to "Fast polishing rate" patented technology

The invention discloses a silicon wafer polishing composition in the field of chemical mechanical polishing (CMP). The polishing composition comprises silica, a polishing interface control agent, a surfactant, a chelating agent, an alkaline compound and water, wherein the particle diameter of the silica in the polishing composition is between 1 and 200 nm; the content of the silica is between 0.05 and 50 weight percent; the polishing interface control agent is polyhydroxy cellulose ether; the content of the polishing interface control agent is between 0.001 and 10 weight percent; the content of the surfactant is between 0.001 and 1 weight percent; the content of the chelating agent is between 0.001 and 1 weight percent; the content of the alkaline compound is between 0.001 and 10 weight percent; the balance being water; and the PH value is between 8.5 and 12. The polishing interface control agent can control a polishing interface between abrasive particles and a polishing object in the chemical mechanical polishing process in order that the surface of the polished silicon wafer is more perfect. The polishing composition is in particular suitable for polishing the silicon wafer and has the advantages of rapid polishing speed, little surface defect and high planeness; and the polished silicon wafer has few metal ion contaminants and is easy to clean.

The invention discloses a polishing composition capable of improving silicon wafer polishing accuracy and a preparation method thereof, and belongs to the technical field of chemical and mechanical polishing. The polishing composition consists of the following components in percentage by weight: 0.05-50 percent of functionalized silicon dioxide sol, 0.001-1 percent of oxidant, 0.001-5 percent of chelating agent, 0.001-10 percent of alkaline compound, 0.001-1 percent of surfactant and the balance of de-ionized water, wherein the functionalized silicon dioxide sol is aminated silicon dioxide sol. After a silicon wafer is polished by the polishing component, the surface accuracy of the wafer is higher, the surface corrosion is less, the polishing speed is high, and the flatness is high.

The invention provides a lanthana cerium oxyfluoride rare earth polishing liquid and a preparation method thereof. The lanthana cerium oxyfluoride rare earth polishing liquid contains lanthana cerium oxyfluoride polishing powder, a dispersing agent and a pH value regulating agent, based on water as a carrier; the content of the dispersing agent is 0.5-1wt% of the total mass of the polishing liquid, the amount of the pH value regulating agent is based on the fact that the pH value of the polishing liquid reaches 8.5-10.0 as a reference, the mass solid content of the polishing liquid is 25-45wt%, the mass of cerium accounts for 60-80wt% of total mass of lanthana and cerium, and the mass fraction of fluoride is 3-5wt% of total mass of lanthana cerium oxyfluoride. The lanthana cerium oxyfluoride rare earth polishing liquid has the performance characteristics of high suspending stability, rapid polishing rate, less scratch and high abrasion resistance on silicon oxide glass, and the particle size of corresponding rare earth particle is small; and the pH value regulating agent and the organic dispersing agent are added, thereby delaying the deposition of an abrasive material in the material liquid, improving the polishing rate of the polishing liquid on a glass substrate and reducing the scratch.

The invention aims to disclose a rare earth polishing material and a preparation method thereof. The rare earth polishing material comprises the following components by weight part: 65 to 98 parts of rare earth polishing powder, 1 to 5 parts of dispersant, 5 to 30 parts of suspension, and 0.05 to 0.3 part of pH regulator. Compared with the conventional product, the invention has the advantages as follows: the polishing powder is a crystalline homogeneous solid solution composed of oxyfluoride rare earth and cubic phase rare earth oxide; the suspension property of the prepared rare earth polishing material is good, and the polishing powder product is good in wear resistance, high in polishing speed and easy to control in polishing accuracy; and the product is good in homogeneity, high in production efficiency and low in cost, is free from contamination, and is applicable to surface polishing of precise devices in the electronic information industry, such as integrated circuits, two-dimensional displays and optical glass, so as to achieve the purposes of the invention.

This invention relates to a metal polishing solution, which is composed of: abrasive material 10-50 wt. %, surfactant 0.1-1 wt. %, pH regulator 1-5 wt. %, chelating agent 0.1-1 wt. %, and deionized water as balance. The granularity of the abrasive material is 15-100 nm. The pH value of the metal polishing solution is 8-12. The metal polishing solution is prepared by: filtering and purifying the above components of the metal polishing solution, introducing the components into a container through a mass flowmeter under negative pressure in a class 1000 clean room, and stirring uniformly. The metal polishing solution has such advantages as high polishing speed, high smoothness, small diameters, and little damage to wafer surface, wasy cleaning, no toxicity, no odor, no corrosion, simple process and easy operation.

The invention discloses a sapphire polishing solution. The sapphire polishing solution is prepared from the following raw materials: a composite abrasive, a pH (Potential of Hydrogen) regulator, a dispersant and a surfactant, wherein the composite abrasive is prepared by adopting the following technology: adding an abrasive, silica sol and the dispersant in a wet ball mill, regulating pH value tobe 2.5 to 8.5, and carrying out ball milling, thus obtaining a prefabricated material A; adding water for diluting the prefabricated material A into a dispersing solution of which the mass percent concentration is 2 to 7 percent, adding metal salt under room temperature, rising the temperature to 80 to 100 DEG C, stirring for 0.5 to 1 hour, then dropwise adding silicic acid for promoting growth ofparticle size, regulating the pH value to be 8 to 12, and aging, thus obtaining a prefabricated material B; concentrating the prefabricated material B, thus obtaining the composite abrasive. The sapphire polishing solution disclosed by the invention has high polishing efficiency on sapphire, cannot scratch the sapphire, and is simple and convenient in preparation technology and lower in cost.

The germanium wafer polishing fluid consists of abradant 10.0-50.0 wt%, surfactant 0.1-1.0 wt%, pH value regulator 1.0-5.0 wt%, chelating agent 0.1-1.0 wt% and deionized water for the rest; and has pH 8-12, and grain size of 15-100 nm. It is prepared through filtering all the ingredients, and mixing via stirring under the action of negative pressure in a clean condition. The germanium wafer polishing fluid has the advantages of high polishing speed, high polished flatness, small grain size causing less surface damage of wafer, simple preparation process and easy use.

The invention discloses a preparation method of rear-earth polishing powder. The preparation method comprises the following steps of: (1), mixing rare earth carbonate with water, and adding a mineralizer for ageing to obtain alkaline type rare earth carbonate slurry; (2), adding a hydrofluoric acid solution to the alkaline type rare earth carbonate slurry for stirring for 1 hour to 3 hours and dehydrating to obtain rear-earth carbonate; (3), roasting the rear-earth carbonate to obtain rear-earth oxyfluoride; and (4), crushing and classifying the rear-earth oxyfluoride to obtain rear-earth polishing powder. The preparation method of the rear-earth polishing powder disclosed by the invention can be used for obtaining polishing powder of a special crystal form, so that the dimension size and morphology uniformity of the polishing powder particles are ensured without generating free fluorine ions and fluoride that affect the polishing precision and the polishing speed, and therefore, the crystallization degree is high; moreover, the product polishing powder is good in wear resistance, quick in polishing speed and easily controllable in polishing precision. Besides, the product is good in uniformity, high in production efficiency, low in cost, free of pollution and suitable for surface polishing machining of electronic information industrial precise apparatuses including an integrated circuit, a panel display, optical glass and the like.

The invention provides a preparation method of silica sol with an irregular shape. The silica sol with the irregular shape is silicon dioxide sol particles with irregular shapes, in a state of the aggregation growth of 2-3 particles, and when the silicon dioxide sol particles are in linear shapes or bent shapes, the long axes of each of the particle diameters of the particles subjected to aggregation growth can achieve 30-60 nm. The preparation method comprises the following steps: with spherical silica sol with a concentration of 2-3.5% and a small particle diameter of 10 nm or 15 nm as mother liquor, adding the mother liquor in a reactor; adding a soluble divalent anion salt solution or trivalent cation salt solution in the mother liquor, and uniformly stirring; then adjusting the pH value to 9-10 by inorganic base with a concentration of 5% or 10%; stirring and heating to boil; then dripping active silicic acid in the reaction system, meanwhile, dripping an inorganic base solution to keep the pH value of the reaction system to be in a range from 9 to 10; and after the dripping is concluded, cooling the reaction product to a room temperature. The preparation method provided by the invention has the technical benefits of being simple in process and good in colloidal stability.

The invention provides precision-type mischmetal polishing powder and a preparation method thereof. The precision-type mischmetal polishing powder is a uniform solid solution composed of an oxyfluoride-crystal form rare earth and a cubic-phase rare-earth oxide. Compared with the existing products, the precision-type mischmetal polishing powder has the advantages that 1, through ball-milling crushing and utilization of a homogenization assistant, a rare-earth carbonate precursor comprises uniform crystal grains; a fluorination reaction is uniform and complete; dissociative fluorinions and fluorides influencing a polishing precision and a polishing rate are not produced; and a high crystallization degree is obtained; 2, wear resistance is good; a polishing rate is fast; and a polishing precision can be controlled easily; 3, product uniformity is good; production efficiency is high; pollution is not produced; and a cost is low; and 4, the precision-type mischmetal polishing powder is suitable for surface polishing processing of precision components such as integrated circuits, flat panel displays and optical glass in the electronic information industry and realizes the purpose of the invention.

The invention discloses surface treatment liquid for 3D printed stainless steel parts and a surface treatment device. The surface treatment liquid comprises soda boiling liquid, a pickling solution and a chemical polishing solution. The soda boiling liquid is composed of sodium hydroxide, nitrates and salt containing chloride ions. The pickling solution is composed of hydrochloric acid, sodium chloride, ferric chloride and a corrosion inhibitor. The chemical polishing solution is composed of nano-scale silica abrasives, 36wt% of hydrochloric acid, 85wt% of phosphoric acid, 68wt% of nitric acid, a corrosion inhibitor, a viscosity modifier, a brightener, an OP-10 emulsifier, a complexing agent and deionized water. The surface treatment liquid for the 3D printed stainless steel parts and thesurface treatment device have the characteristics of effectively reducing the surface roughness of the 3D printed stainless steel parts, improving the surface flatness and being good in surface treatment quality and high in surface treatment efficiency.

The invention provides a preparation method of a sapphire substrate polishing solution, which comprises the following steps: employing a membrane filtration device to remove metal ions and other impurities in a silica sol raw material; passing the filtered silica sol with concentration of 48-50% under a vacuum negative pressure state through a 100 nano-level folding filter core and then adding in an enclosed reaction pot; adding a stabilizing agent under the vacuum negative pressure state in the enclosed reaction pot; adding a synergist with pH value of 8.0-8.5 under the vacuum negative pressure state in the enclosed reaction pot; fully stirring the liquid in the enclosed reaction pot under a negative pressure tumbling state for 60 minutes, and uniformly mixing and then loading. The preparation method has the following beneficial effects that the alkalescence sapphire substrate polishing solution has no corrosion effect to the polishing device, after the usage of the polishing solution is finished, and then the polishing solution is processed, the processed polishing solution can be used as a building paint additive, so that the problems of easy coagulation and difficult recovery of a traditional acidic polishing solution can be solved.

The invention discloses a convenient polishing machine for machining bearings. The convenient polishing machine comprises a driving motor, a polishing wheel, a rotating shaft, a machine head device, a machine body, a lifting frame, a workbench, a circuit box, a driving rotating wheel, a driving shaft, an adjuster, a transmission belt, a protective cover, a controller, a control panel and a fixed base. The driving motor is connected with the driving rotating wheel. The driving shaft is fixed to the right side of the driving rotating wheel. The transmission belt is located on the inner side of the protective cover. The rotating shaft is fixed to the left side of the transmission belt. The control panel is located on the outer side of the machine body. The fixed base is connected with the machine body. The polishing wheel of the convenient polishing machine for machining the bearings is made of good materials and has high abrasion resistance. The lifting equipment is arranged, so that the situation that the polishing direction is single during working is well avoided. The size of the convenient polishing machine is small, and the high-quality polishing equipment is arranged, so that the polishing efficiency is greatly improved, the polishing speed is increased, and the production development speed is increased.

The invention provides a silicon polishing composition as well as a preparation method and application thereof, the silicon polishing composition takes nano silicon dioxide colloid as a main polishing component, and piperazine substances and water-soluble organic weak acid containing furan rings are added as auxiliaries. The piperazine substance and the water-soluble organic weak acid containing the furan ring are simultaneously added into the silicon polishing composition to serve as the stability auxiliaries, the grinding material agglomeration can be effectively inhibited, the storage time and the service life of the polishing solution are prolonged, and compared with the prior art, the silicon polishing composition has obvious advantages.

The invention discloses a preparation method and application of silica sol for chemical polishing, and belongs to the technical field of semiconductor chemical polishing materials. According to the invention, silica sol granulation is carried out by adopting a method of combining a traditional silicic acid hydrolysis method and a silica powder hydrolysis method, raw materials are easy to obtain, the preparation process flow can realize mass production, equipment transformation is not needed, and the cost and manual training cost are greatly saved. In the granulation process, silicon powder is introduced as a silicon source, so that the average density of seed particles for granulation is higher, the surface activation energy is favorably increased, and the particles are favorably increased again. The prepared large-particle-size silica sol particles are higher in hardness, show higher surface energy in the terminal application process, and are higher in polishing rate and higher in particle tolerance. The average particle size of the obtained silica sol particles is about 100 nanometers, and the silica sol particles are good in stability, free of agglomeration, high in polishing speed and removal rate and capable of greatly improving the polishing efficiency when applied to chemical polishing.