37results about How to "Fast polishing rate" patented technology

The invention provides a lanthana cerium oxyfluoride rare earth polishing liquid and a preparation method thereof. The lanthana cerium oxyfluoride rare earth polishing liquid contains lanthana cerium oxyfluoride polishing powder, a dispersing agent and a pH value regulating agent, based on water as a carrier; the content of the dispersing agent is 0.5-1wt% of the total mass of the polishing liquid, the amount of the pH value regulating agent is based on the fact that the pH value of the polishing liquid reaches 8.5-10.0 as a reference, the mass solid content of the polishing liquid is 25-45wt%, the mass of cerium accounts for 60-80wt% of total mass of lanthana and cerium, and the mass fraction of fluoride is 3-5wt% of total mass of lanthana cerium oxyfluoride. The lanthana cerium oxyfluoride rare earth polishing liquid has the performance characteristics of high suspending stability, rapid polishing rate, less scratch and high abrasion resistance on silicon oxide glass, and the particle size of corresponding rare earth particle is small; and the pH value regulating agent and the organic dispersing agent are added, thereby delaying the deposition of an abrasive material in the material liquid, improving the polishing rate of the polishing liquid on a glass substrate and reducing the scratch.

The invention provides precision-type mischmetal polishing powder and a preparation method thereof. The precision-type mischmetal polishing powder is a uniform solid solution composed of an oxyfluoride-crystal form rare earth and a cubic-phase rare-earth oxide. Compared with the existing products, the precision-type mischmetal polishing powder has the advantages that 1, through ball-milling crushing and utilization of a homogenization assistant, a rare-earth carbonate precursor comprises uniform crystal grains; a fluorination reaction is uniform and complete; dissociative fluorinions and fluorides influencing a polishing precision and a polishing rate are not produced; and a high crystallization degree is obtained; 2, wear resistance is good; a polishing rate is fast; and a polishing precision can be controlled easily; 3, product uniformity is good; production efficiency is high; pollution is not produced; and a cost is low; and 4, the precision-type mischmetal polishing powder is suitable for surface polishing processing of precision components such as integrated circuits, flat panel displays and optical glass in the electronic information industry and realizes the purpose of the invention.

The invention provides an asphalt polishing disc. By adding fluff components to the asphalt, it can not only drive the relative movement of the polishing material particles, increase the movement trajectory of the polishing material, thereby increasing the polishing rate, but also reduce the surface of the electronic components during the polishing process. It has the function of chip removal; by adding white carbon black to the asphalt, it can play the role of nanoparticles, effectively improve the elastic modulus performance, and can hold other polishing materials. Further, in asphalt, wax Under the synergistic effect of the specific component content of , fluff and white carbon black, the strength and toughness of the asphalt polishing disc after molding are effectively improved, making it difficult to deform, so that the asphalt polishing disc of the present invention has high surface stability and is used for processing electronic components When , it can effectively improve the surface flatness and polishing precision of the optical element, and the polishing speed is fast.

The invention provides a preparation method of silica sol with an irregular shape. The silica sol with the irregular shape is silicon dioxide sol particles with irregular shapes, in a state of the aggregation growth of 2-3 particles, and when the silicon dioxide sol particles are in linear shapes or bent shapes, the long axes of each of the particle diameters of the particles subjected to aggregation growth can achieve 30-60 nm. The preparation method comprises the following steps: with spherical silica sol with a concentration of 2-3.5% and a small particle diameter of 10 nm or 15 nm as mother liquor, adding the mother liquor in a reactor; adding a soluble divalent anion salt solution or trivalent cation salt solution in the mother liquor, and uniformly stirring; then adjusting the pH value to 9-10 by inorganic base with a concentration of 5% or 10%; stirring and heating to boil; then dripping active silicic acid in the reaction system, meanwhile, dripping an inorganic base solution to keep the pH value of the reaction system to be in a range from 9 to 10; and after the dripping is concluded, cooling the reaction product to a room temperature. The preparation method provided by the invention has the technical benefits of being simple in process and good in colloidal stability.

The present invention proposes a kind of preparation method of sapphire substrate polishing liquid, and its method step is as follows: adopt membrane filter equipment to remove metal ion and other impurity in silica sol raw material; % to 50% of the silica sol is added to the closed reaction tank through a 100-nanometer pleated filter element; the stabilizer is added to the closed reaction tank under vacuum negative pressure; The effect agent is added into the closed reaction tank; the liquid in the closed reaction tank is fully stirred for 60 minutes under the negative pressure tumbling state, and the filling is carried out after mixing evenly. The beneficial effects of the present invention are as follows: the alkaline sapphire substrate polishing liquid prepared by the method of the present invention has no corrosive effect on polishing equipment, and after the polishing liquid is used and treated, it can also be used as an additive for architectural coatings, which solves the problem of traditional acidic The polishing liquid is easy to gel, difficult to recycle and many other problems.

The invention discloses a method for detecting microdefects of quasi monocrystalline silicon sheets. The method includes a manually and mechanically polishing step of manually and mechanically polishing aquasi monocrystalline silicon sheet to be etched and flushing the quasi monocrystalline silicon sheet with deionized water; a chemical etch polishing step of chemically etching and polishing the silicon sheet subjected to the mechanical polishing and rinsing the silicon sheet with deionized water; a preferential microdefect etching step of carrying out preferential microdefect etching on the silicon sheet subjected to the chemically etching and polishing, rinsing the silicon sheet with deionized water and drying the silicon sheet in a baking oven; and a microdefect observation process of carrying out minority carrier lifetime and iron-boron opposite scanning for the etched silicon chip, observing the minority carrier lifetime scanning color distribution by a metallographic microscope, accurately positioning the microdefect positions, classifying the defect types, positioning and cutting the silicon chip into pieces, and marking the pieces. The method is rapid, accurate, energy-saving, environmental-friendly, pollution-free and highly practical.