Finishing polish liquid in use for silicon wafer

A silicon wafer, fine polishing technology, applied in the field of polishing liquid, can solve the problems of easy precipitation, slow removal rate, poor fluidity of polishing liquid, etc., and achieve the effect of small abrasive particle size, fast polishing rate and good fluidity

Inactive Publication Date: 2007-12-26
天津晶岭电子材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main problems of silicon wafer fine polishing liquid are: when the abrasive particles are small, the removal rate is too slow; when the abrasive particles are large, surface scratches will occur; the residual particles are difficult to clean after polishing; the polishing liquid has poor fluidity and is easy to precipitate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] A fine polishing solution for silicon wafers, its composition: the composite abrasive is composed of water-soluble silica sol and alumina hydrosol, the weight ratio of the two is 4:1, and its particle size range is 15-25nm; the surfactant is Polyoxyethylene fatty alcohol; chelating agent is hexahydroxypropylpropylenediamine; pH regulator is ammonia water and deionized water. The percentage by weight of various ingredients is: 20% of water-soluble silica sol, 5% of alumina hydrosol; 0.5% of polyoxyethylene fatty alcohol; 0.5% of hexahydroxypropylpropylenediamine; 1.5% of ammonia water; quantity. The pH value of the fine polishing liquid is 11.2, and its preparation method is: firstly, filter and purify the various components of the fine polishing liquid respectively, and then, in the environment of a thousand-class clean room, put the various components in a vacuum negative Under the power of high pressure, it is input into the container tank through the mass flow meter...

Embodiment 2

[0015] A fine polishing solution for silicon wafers, its composition: the composite abrasive is composed of water-soluble silica sol and CeO 2 Composed of hydrosol, the weight ratio of the two is 4:1, and the particle size range is 20-30nm; the surfactant is ethylene glycol ester; the chelating agent is EDTA; the pH regulator is tetramethylammonium hydroxide and deionized water . The percentage by weight of various ingredients is: water-soluble silica sol 20%, CeO 2 Hydrosol 5%; Ethylene glycol ester 0.3%; EDTA 0.5%; Tetramethylammonium hydroxide 1%; Deionized water is the balance. The pH value of this essence throwing liquid is 11.3, and its preparation method is identical with embodiment 1. Dilute the above fine polishing liquid and deionized water by 1:10, and experiment on Lanxin X62 815-1 single-sided polishing machine: at 300g / cm 2 , 40±5℃, 3L±0.3L / min, the silicon wafer with crystal orientation was polished, and the removal rate was 0.7μm / min.

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Abstract

This invention discloses a fine polishing solution for silicon wafer. The fine polishing solution is composed of: composite abrasive material 5-30 wt. %, surfactant 0.1-1 wt. %, chelating agent 0.1-1 wt. %, pH regulator 1-6 wt. %, and deionized water as balance. The composite abrasive material is composed of water-soluble silica sol and Al2O3 hydrosol or CeO2 hydrosol at a weight ratio of 4:1. The composite abrasive material has particle sizes of 10-60 nm. The fine polishing solution has such advantages as small particle sizes of the composite abrasive material, no damage to wafer surface after polishing, high polishing speed, high fluidity, and no sodium ion contamination (by using organic alkali as the pH regulator). By utilizing nonionic surfactant, the composite abrasive material and the reaction product can be easily removed from wafer surface.

Description

(1) Technical field [0001] The invention relates to a polishing liquid for semiconductor wafers, in particular to a fine polishing liquid for silicon wafers. (2) Background technology [0002] There are rough polishing and fine polishing in semiconductor wafer polishing process. Coarse polishing is to remove the thickness of the mechanically damaged layer of the polished semiconductor wafer as soon as possible within a unit of time, laying the foundation for fine polishing; the task of fine polishing is to improve the flatness of the crystal surface, and polish as much as possible without damage to achieve a high-smooth surface quality. The polishing liquid is also divided into rough polishing liquid and fine polishing liquid. The abrasive particles in the coarse polishing liquid are relatively large, which is beneficial to the thickness removal rate of the crystal sheet and improves the polishing efficiency; the abrasive particles in the fine polishing liquid are small, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/14H01L21/304
Inventor 仲跻和李家荣周云昌吴亮
Owner 天津晶岭电子材料科技有限公司
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