Preparation method of composite cerium-zirconium oxide polishing powder

A composite oxide and polishing powder technology, which is applied in the direction of chemical instruments and methods, and other chemical processes, to achieve the effects of small particle size, significant synergistic polishing, and high wear resistance
CN102337085BActive Publication Date: 2013-06-19上海华明高纳稀土新材料有限公司
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
上海华明高纳稀土新材料有限公司
Publication Date
2013-06-19

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a preparation method of a composite cerium-zirconium oxide polishing powder. The preparation method comprises the following steps: (1) preparing insoluble cerium salts into slurry, carrying out ball milling and smashing until the average particle size D50 of particles in the slurry is distributed within a range from 0.55mu m to 0.75mu m, and the average particle size D90 ofparticles in the slurry is distributed within a range from 1.1mu m to 1.4mu m; (2) adding soluble zirconium salts into a product obtained in the step (1), adding a precipitator, standing and ageing, dehydrating and drying, wherein the precipitator is ammonia water, ammonium bicarbonate or oxalic acid; and (3) roasting for 3-8 hours at the temperature of 850-1000 DEG C, and carrying out jet milling so as to obtain the composite cerium-zirconium oxide polishing powder. According to the invention, the obtained polishing powder has small particle size and narrow size distribution range, has the performance characteristics of rapid polishing rate, less scratches and high abrasive resistance on a glass substrate, and has obvious synergetic polishing effect.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a preparation method of cerium zirconium composite oxide polishing powder. Background technique

[0002] With the continuous development of semiconductor technology and the continuous reduction of the structure of semiconductor elements, chemical mechanical polishing (Chemical Mechanical Polishing, CMP) plays an increasingly important role in providing global planarization in the semiconductor manufacturing process. The polishing liquid is one of the key elements of CMP, and the performance of the polishing liquid directly affects the polishing rate and the quality of the polished surface. The polishing liquid is generally composed of ultra-fine solid polishing powder particles (such as nano- or sub-micron Fe 2 O 3 , CeO 2 , SiO 2 , Al 2 O 3 Particles), surfactants, pH adjusters, etc., among which the polishing powder particles provide abrasive action and are the core material in the chemical mechanical polishing process....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More