Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof

A polishing composition and a technology for silicon wafers, which are applied to polishing compositions containing abrasives and other directions, can solve the problems of low surface precision and corrosion of silicon wafers, and achieve the effects of high flatness, fast polishing rate and high surface precision

Inactive Publication Date: 2012-04-11
TSINGHUA UNIV +2
View PDF3 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The invention overcomes the problems of low precision and serious corrosion of the silicon wafer surface during the polishing process of the traditional silicon wafer polishing liquid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof
  • Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof
  • Polishing composition capable of improving silicon wafer polishing accuracy and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～7

[0036] The polishing composition was prepared. According to the specific polishing implementation requirements, 6000g of polishing composition was configured for each example for polishing experiments, as shown in Table 1.

[0037] Among them, the preparation method of the aminated silica sol used in Examples 1 to 3 is as follows: the particle size of the silica sol used in the examples is 40nm, the reaction kettle is heated to 95°C, and KH550 aminosilane is added to couple agent, the mass ratio of colloidal silica to aminosilane coupling agent was 200, and stirred at constant temperature for 3 hours to obtain aminated silica sol.

[0038] The preparation method of the aminated silica sol used in Examples 4 to 6 is as follows: the particle size of the silica sol used in the examples is 25nm, the reaction kettle is heated to 25°C, and A-1110 aminosilane is added to couple agent, the mass ratio of colloidal silica to aminosilane coupling agent is 400, and stirred at constant tem...

Embodiment 7

[0039] The preparation method of the aminated silica sol used in Example 7 is as follows: the particle size of the silica sol used in the example is 75nm, the reaction kettle is heated to 45°C, and A-1120 aminosilane coupling agent is added, The mass ratio of colloidal silica to aminosilane coupling agent was 600, and stirred at constant temperature for 3 hours to obtain aminated silica sol.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
surface roughnessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a polishing composition capable of improving silicon wafer polishing accuracy and a preparation method thereof, and belongs to the technical field of chemical and mechanical polishing. The polishing composition consists of the following components in percentage by weight: 0.05-50 percent of functionalized silicon dioxide sol, 0.001-1 percent of oxidant, 0.001-5 percent of chelating agent, 0.001-10 percent of alkaline compound, 0.001-1 percent of surfactant and the balance of de-ionized water, wherein the functionalized silicon dioxide sol is aminated silicon dioxide sol. After a silicon wafer is polished by the polishing component, the surface accuracy of the wafer is higher, the surface corrosion is less, the polishing speed is high, and the flatness is high.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing (CMP), in particular to a polishing composition capable of improving the polishing precision of a silicon wafer and a preparation method thereof. Background technique [0002] Semiconductor materials, mainly silicon materials, are the most important basic functional materials in the electronic information industry, and occupy a very important position in the national economy and military industry. More than 95% of the world's semiconductor devices are made of silicon materials, and 85% of integrated circuits are also made of silicon materials. At present, IC technology has entered the era of nanoelectronics with a line width of less than 0.1 μm, and the requirements for the surface processing quality of silicon single crystal polished wafers are getting higher and higher. Traditional polishing fluids can no longer meet the requirements of silicon single wafer polishing. In o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 潘国顺顾忠华邹春莉高源
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com