High-efficiency mixed abrasive chemical mechanical polishing solution for sapphire substrate

A sapphire substrate, chemical-mechanical technology, applied in polishing compositions containing abrasives, etc., can solve problems such as reducing product reliability, health hazards, and increasing costs, and achieves stable pH value, fast polishing rate, and uniform dispersion. Effect

Inactive Publication Date: 2019-11-29
DALIAN UNIV OF TECH
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Strong acids, strong alkalis and toxic reagents pose serious hazards to the environment and the health of operators and do not conform to the modern green processing concept; metal ions in the polishing solution easily remain on the substrate surface, reducing product reliability and increasing Cost of cleaning after chemical mechanical polishing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-efficiency mixed abrasive chemical mechanical polishing solution for sapphire substrate
  • High-efficiency mixed abrasive chemical mechanical polishing solution for sapphire substrate
  • High-efficiency mixed abrasive chemical mechanical polishing solution for sapphire substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The main components and content of the polishing liquid: the abrasive is 25nm and 90nm silicon oxide abrasives with the same solid content mixed according to the weight ratio of 3:1, the content is 10%; the surfactant is polyoxyethylene lauryl ether, the content is 0.5%; The chelating agent is sorbitol, with a content of 0.5%, and the pH regulator is aminomethyl propanol, and the adjusted pH is 10.5.

[0029] The surface roughness Ra value of the polished sapphire substrate is 0.530nm, the rms value is 0.661nm, and the PV value is 5.814nm (see figure 2 ), the material removal rate is 6.78μm / h. .

Embodiment 2

[0031] The main components and content of the polishing liquid: the abrasive is silicon oxide abrasive, the particle size is 25nm, and the content is 10%; the surfactant is polyoxyethylene lauryl ether, the content is 0.5%; the chelating agent is sorbitol, the content is 0.5%, The pH regulator is aminomethyl propanol, and the pH is adjusted to be 10.5.

[0032] The surface roughness Ra value of the polished sapphire substrate is 0.606nm, the rms value is 0.764nm, and the PV value is 7.801nm (see image 3 ), the material removal rate is 3.18μm / h.

Embodiment 3

[0034] The main components and content of the polishing liquid: the abrasive grain is silicon oxide abrasive grain, the particle size is 90nm, and the content is 10%; the surfactant is polyoxyethylene lauryl ether, the content is 0.5%; the chelating agent is sorbitol, the content is 0.5% %, the pH regulator is aminomethylpropanol, and the pH adjustment is 10.5.

[0035] The surface roughness Ra value of the polished sapphire substrate is 0.643nm, the rms value is 0.827nm, and the PV value is 7.198nm (see Figure 4 ), the material removal rate is 4.86μm / h.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of ultra-precision machining of hard and brittle materials, and provides a high-efficiency mixed abrasive chemical mechanical polishing solution for a sapphire substrate. The high-efficiency mixed abrasive chemical mechanical polishing solution comprises a mixed abrasive, a surfactant, a chelating agent, a pH regulator and deionized water. After chemical mechanical polishing, the surface roughness Ra of the sapphire substrate is 0.530 nm and the material removal rate is 6.78 mu m / h in a large detection range of 105*141 mu m<2>. The ultra-high material removal rate of the sapphire substrate and the chemical mechanical polishing of the undamaged sub-nanometer surface roughness are realized.

Description

technical field [0001] The invention belongs to the technical field of ultra-precision processing of hard and brittle materials, and in particular relates to a mixed abrasive chemical mechanical polishing liquid for sapphire substrates. Background technique [0002] Sapphire, commonly known as "corundum", the main component is Al 2 o 3 . Sapphire's excellent light transmission in the 3-5μm band, good impact resistance, strength, stiffness, and good high-temperature stability make it widely used in aviation, military, optical instruments and other fields. Among them, α-phase single-crystal sapphire has become the main substrate material for GaN-based optoelectronic devices, and plays a huge role in the light-emitting diode (LED) industry. With the continuous advancement of technology, the requirements for sapphire products are getting higher and higher, including the thickness of sapphire is thinner, the size of surface defects is smaller, and the number of surface defects...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 张振宇谢文祥陈宇郜培丽苏宏久王树东
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap