The invention relates to a method of manufacturing a
composite structure comprising a thin film made of single-
crystal silicon carbide, arranged on a carrier substrate made of
polycrystalline silicon carbide, comprising the following steps: 1) providing at least one donor substrate made of single-
crystal silicon carbide, said donor substrate having a front face and a back face, said front face potentially having defects, called primary defects; 2) checking the quality of said at least one donor substrate using a
photoluminescence-like
imaging technique to extract a map of the front face, called a first map, listing the primary defects, said primary defects being identified as micro-hole type, complex star stack defect type or point defect type; 3) transferring a thin film obtained from a
surface layer of said at least one donor substrate onto a carrier substrate made of
polycrystalline silicon carbide to obtain a
composite structure and a remaining donor substrate; 4) checking the free surface of the thin film of the
composite structure by means of a defect checking technique using
ultraviolet laser beam scattering to extract a map of the free surface, called a second map, listing the defects, called secondary defects; 5) rating said composite structure, which comprises comparing said first map and said second map.