The invention relates to the technical field of
silicon wafer polishing, in particular to a high-speed and low-defect
silicon medium
polishing liquid which comprises
grinding particles, an alkaline compound, a surface protective agent and water. The content of the
grinding particles is 4-10 wt%, the content of the alkaline compound is 0.05-1.5 wt%, the content of the surface protective agent is 0.1-3 wt%, and the balance is water; the alkali compound is at least one of
tetramethylammonium hydroxide,
piperazine, 1-(2-aminoethyl)
piperazine, 1, 4-bis (3-aminopropyl)
piperazine, 1, 4-bis (2-hydroxyethyl) piperazine, 1, 8-diazabicyclo (5, 4, 0) undec-7-ene, 4-aminopiperidine, monoethanolamine, 3-amino-1-
propanol, n-
propylamine,
isopropylamine, diglycolamine, isopropanolamine,
ethylenediamine,
choline hydroxide and
ammonia water. By adding the
organic base with a special molecular structure and adjusting the
concentration ratio of the
organic base to the surface protecting agent, the high removal rate can be effectively achieved under the high
dilution ratio, and the good surface quality without
polishing marks /
fog, with few particle defects and low roughness is obtained.