The application discloses a battery
chip back
electrode passivation method and relates to the technical field of battery chips, which comprises the following steps: placing a battery
chip in a reaction cavity, controlling the temperature and
back pressure of the reaction cavity, pulse-injecting a steric slow-release precursor solution prepared by the coordination reaction of trimethylaluminum and tert-
butylamine, performing
chemical adsorption, introducing double-frequency
resonance cascade working gas after purging, starting a high-frequency
radio frequency power supply to perform
processing, forming an initial-state sub-
monolayer, keeping the high-frequency
radio frequency power supply on, superimposing a low-frequency
radio frequency power supply, controlling the low-frequency power by linear ramping, converting the initial-state sub-
monolayer into a dense
barrier layer by physical bombardment, shutting down the low-frequency radio frequency power supply, reducing the high-frequency radio frequency power supply to a low-power state, keeping the double-frequency
resonance cascade working gas purging, and performing by-product
desorption overflow
processing. The application takes into account low-damage protection of a sensitive interface and
high density of a film layer in a single vacuum process, effectively removes film layer impurities, and improves the
corrosion resistance and long-term reliability of the battery
chip.