This invention provides a method for synthesizing high-purity
tungsten complexes, relating to the field of
chemical synthesis technology. Under a
nitrogen atmosphere,
tungsten hexachloride and an
alkane solvent are added to a reaction vessel, the temperature is lowered to 0°C, tert-
butylamine is added dropwise, the mixture is brought back to
room temperature with stirring, filtered, and washed to obtain a filtrate. Trimethylchlorosilane is added dropwise to the filtrate, the reaction is heated, and after returning to
room temperature,
pyridine is added dropwise. The reaction yields (…). t The intermediate BuN)2WCl2(py)2 is synthesized by adding
toluene and dialkylamine. After reaction, the mixture is filtered, washed, the
solvent is evaporated, and then distilled to obtain a high-purity
tungsten complex. By optimizing the
reaction conditions and
raw material ratio, the synthesis method of this invention significantly improves the yield of the high-purity tungsten complex. Compared with the prior art, it effectively reduces the waste of raw materials, improves production efficiency, and successfully achieves a product
metal purity of 5N, meeting the stringent requirements of the
semiconductor field for product
metal purity and helping to improve the performance and quality of subsequent application products.