The utility model provides a
system for
chemical vapor deposition of
silicon carbide, which comprises a
gas supply module for providing required gas for deposition reaction; the reaction module comprises a
chemical vapor deposition chamber and is used for executing a deposition reaction process of
silicon carbide; the
tail gas treatment module is responsible for treating
tail gas generated in the reaction process; the
gas supply module comprises a gas output part, a liquid output part and a
vaporization device, the gas output part and the liquid output part are both connected with the input end of the
vaporization device, and the output end of the
vaporization device is connected with the reaction module; the output end of the reaction module is connected with the
tail gas treatment module, and a first filtering device is connected between the reaction module and the tail gas treatment module. The vaporization device is adopted to replace a traditional
mixing tank, so that the vaporization efficiency of methyl
trichlorosilane (MTS) is remarkably improved, the utilization efficiency of the
raw material MTS is greatly improved, and meanwhile, the use amount of
hydrogen is effectively reduced. Not only is the production cost reduced, but also the control of
process conditions becomes more accurate, and the purity of the
silicon carbide product is improved.