17 results about "Tetramethylammonium hydroxide" patented technology

This invention discloses a dyeing method for a PET aluminized film, which exhibits high color fastness and good steam resistance. The dyeing method for a PET aluminized film includes the following steps: Step (1), etching the PET aluminized film using tetramethylammonium hydroxide; Step (2), dyeing the PET aluminized film obtained in step (1) using an acidic medium dye; Step (3), fixing the color of the PET aluminized film obtained in step (2) using a color-fixing agent; Step (4), surface treating the PET aluminized film obtained in step (3) using a coating agent, followed by drying.

The present application relates to wastewater treatment technical field, specifically to a kind of wastewater treatment equipment and process for tetramethylammonium hydroxide production, including the treatment pool with gas main in pool, the top of gas main is equipped with aerator;Aerator includes base pipe, the top of base pipe is equipped with the rectifier plate that is hollow inside and is communicated with base pipe, both board surfaces of rectifier plate are equipped with rectifier hole communicated with the cavity inside rectifier plate;The top of base pipe is also covered with the aeration membrane cover that simultaneously covers rectifier plate entirely, aeration membrane cover and base pipe form aeration chamber communicated with rectifier hole on rectifier plate, the surface of aeration membrane cover is equipped with aeration hole communicated with aeration chamber;Rectifier plate is supported up from inside aeration membrane cover aeration membrane cover, and aeration membrane cover is divided into upper aeration zone and lower aeration zone, when gas is sprayed through aeration hole at lower aeration zone, it will float up, and it will drive aeration membrane cover vibration to carry out the blockage cleaning of aeration hole, and it will move to the upper aeration zone above to carry out aeration compensation.

The application belongs to the technical field of water treatment, and particularly relates to a phosphorus-containing modified magnetic chitosan microsphere, a preparation method thereof and application of the phosphorus-containing modified magnetic chitosan microsphere in treatment of chromium-containing underground water. Compared with the prior art, the phosphorus-containing modified magnetic chitosan microsphere provided by the application takes magnetic nanoparticles as a core, can be quickly separated from a reaction system by relying on external magnetic force of a system, and forms hydrogen bonds through hydroxyl groups of the magnetic nanoparticles and amino groups and hydroxyl groups of a chitosan molecular chain, so that stability and dispersibility of the magnetic nanoparticles are improved. Furthermore, a tetramethylammonium hydroxide solution is used as a crosslinking agent, so that a phosphorus-containing cationic group in the tetramethylammonium hydroxide is grafted on the chitosan molecule, thereby greatly enhancing adsorption performance of the chitosan on anionic heavy metal pollutants such as Cr(VI), and having long-term stability in remediation of Cr(VI)-contaminated underground water.

The present invention relates to a cleaning composition and a cleaning method for a CMP process performed during the manufacturing process of a glass substrate-based Through Glass Via (TGV) structure. The cleaning composition comprises a quaternary ammonium salt, an alkanolamine, a glycol ether, an azole compound, a surfactant, and water. By including tetramethylammonium hydroxide and choline hydroxide as the quaternary ammonium salt in a specific ratio, the cleaning composition effectively removes polishing particles and organic residues remaining after the CMP process even under high alkaline conditions of pH 12 or higher, while suppressing excessive corrosion of the glass substrate and metal wiring, allowing the cleaning solution to penetrate uniformly into the high aspect ratio via, and simultaneously removing residual contaminants and preventing re-adsorption.

This invention relates to a method for preparing yttrium oxide with a large specific surface area. The method includes the following steps: S1, dissolving yttrium salt and adding tetramethylammonium hydroxide to precipitate; S2, washing with distilled water and centrifuging to dehydrate; S3, washing with ethanol and dehydrating; S4, adding diethylene glycol monobutyl ether and mixing evenly to form a paste; S5, calcining the paste formed in step S4 at a low temperature to form a powder; S6, adding anhydrous ethanol to the powder obtained in step S5 and ball milling; S7, drying. This invention uses tetramethylammonium hydroxide for precipitation, whose spatial structure reduces agglomeration. After washing, multiple washes with ethanol remove moisture, and then diethylene glycol monobutyl ether solution is added to form a paste, further reducing agglomeration during calcination. The calcination temperature is only 600-750℃, which is energy-saving and environmentally friendly. During ball milling, anhydrous ethanol is added, eliminating moisture during the process and reducing agglomeration. The yttrium oxide prepared by this method has a specific surface area of ​​100-200 m² / g. 2 / g.

The present disclosure relates to a kind of UZM-8 molecular sieve and its preparation method, catalyst and application containing UZM-8 molecular sieve, the method includes: the raw material mixture containing silicon aluminum source, first template agent, second template agent and water is carried out hydrothermal crystallization reaction and recovers product;Wherein, the first template agent is at least one selected from tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, the second template agent is dimethyl diethyl ammonium hydroxide.Compared with the UZM-8 molecular sieve synthesized by traditional hydrothermal method, the UZM-8 molecular sieve with high crystallinity, high specific surface area and pore volume can be synthesized in the present disclosure, while the synthesis cost of molecular sieve is significantly reduced.

The present application relates to an environment-friendly water-based industrial anticorrosive coating and a preparation method thereof, and belongs to the technical field of coating. The coating composition comprises chloroether resin emulsion, corrosion inhibition emulsion, barrier agent, slag composite filler, etc. The corrosion inhibition emulsion is prepared by using hexamethylcyclotrisilazane, glycidyl furfuryl ether and 2-furfurylamine in isopropyl alcohol as raw materials and tetramethylammonium hydroxide as catalyst, and then emulsified with deionized water and composite emulsifier after removing isopropyl alcohol. The barrier agent is prepared by modifying the titanium aluminum carbide sheet layer after acid stripping with 3-aminopropyltriethoxysilane. The slag composite filler is prepared by sintering blast furnace slag powder, zeolite powder and potassium dihydrogen phosphate, etching with citric acid, and then modifying with boron nitride and KH-172 silane coupling agent. The coating uses water as the dispersion medium to reduce VOC emissions, and constructs a protective system in multiple dimensions through chemical active corrosion protection, physical layered barrier, dense film formation and interface covalent bonding, and is suitable for harsh corrosion scenes such as industrial heavy-duty corrosion, ships and marine engineering.

The application relates to the technical field of semiconductor manufacturing, in particular to a silicon etching forming method for embedded packaging grooves; the silicon etching forming method for embedded packaging grooves takes a patterned silicon wafer as a base, takes tetramethylammonium hydroxide as an etching medium, takes a pH-responsive triblock copolymer as a morphology programming molecule, selectively anchors the silicon surface at the edge of a photoresist opening through covalent bonding, controls the molecular conformation by using the etching liquid, realizes in-situ continuous adjustment of the groove sidewall angle, realizes molecular recovery and residual removal through pH switching and RCA cleaning, and completes programmable etching forming of the embedded packaging grooves; the application realizes in-situ continuous adjustment of the groove sidewall angle of 60-90 degrees through covalent anchoring and pH control of the molecular conformation, combines a full-chain closed-loop process, solves the problems of fixed etching sidewall angle, high chemical consumption and difficult control of organic residues, and provides a high-precision and programmable solution for advanced packaging embedded groove etching.

The application belongs to the field of semiconductor substrate manufacturing, and discloses a cleaning process of a gallium antimonide wafer. The process comprises the following steps: placing a polished and waxed wafer in hot concentrated sulfuric acid and then in cold concentrated sulfuric acid for immersion treatment; placing the wafer in S1 cleaning solution for cleaning treatment, wherein the S1 cleaning solution is a tetramethylammonium hydroxide solution; placing the wafer in S2 cleaning solution for cleaning treatment, wherein the S2 cleaning solution is a mixture of hydrofluoric acid, hydrochloric acid and water; placing the wafer in S3 cleaning solution for cleaning treatment, wherein the S3 cleaning solution is a mixture of nitric acid and water; placing the wafer in S4 cleaning solution for cleaning treatment, wherein the S4 cleaning solution is hydrogen peroxide; placing the wafer in S5 cleaning solution for cleaning treatment, wherein the S5 cleaning solution is a mixture of phosphoric acid and water; placing the wafer in S6 cleaning solution for cleaning treatment, wherein the S6 cleaning solution is a mixture of sulfuric acid and water; and drying. The cleaning process can improve the yield of products and reduce production costs.

The present disclosure provides an etching solution, a GaN material etching method and a gallium nitride transistor manufacturing method, and belongs to the technical field of semiconductors. The etching solution comprises a tetramethylammonium hydroxide solution and an oxidizing agent, the concentration of the tetramethylammonium hydroxide solution is 0.1-2.0 mol / L, and the concentration of the oxidizing agent is 0.01-0.5 mol / L. The present disclosure can improve the etching effect of GaN materials.

The application belongs to the technical field of chemical production, and particularly relates to a solid tetramethylammonium hydroxide preparation method and a preparation device. The solid tetramethylammonium hydroxide preparation method comprises the following steps: S1. tetramethylammonium hydroxide aqueous solution and nitrogen are mixed in a spraying device to obtain mixed slurry; S2. the mixed slurry is atomized to form dry powder particles to obtain solid tetramethylammonium hydroxide; the nitrogen is sent to the spraying device after being heated, and the temperature of the heating is 80-90 DEG C. The solid tetramethylammonium hydroxide preparation method provided in the application uses nitrogen heating atomization technology, completely abandons the traditional organic solvent dehydration process, fundamentally eliminates the risk of flammability and explosiveness, and avoids the high energy consumption link of solvent recovery by rectification. The solid tetramethylammonium hydroxide obtained by the method provided in the application has a lower water content than the tetramethylammonium hydroxide pentahydrate crystal, has uniform particle size, and is beneficial to the use effect of a semiconductor photoresist cleaning agent.

This invention discloses an environmentally friendly and efficient 4H-SiC polishing slurry and its preparation method, belonging to the technical field of polishing compositions. The 4H-SiC polishing slurry of this invention comprises the following components: 1.5 wt.%~6 wt.% abrasive, 0.2 wt.%~0.4 wt.% photocatalyst, 2 wt.%~4 wt.% H2O2, an organic base pH adjuster to adjust the pH value of the 4H-SiC polishing slurry to 8~11, and the balance being water; wherein the organic base pH adjuster includes at least one of tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline hydroxide. The composition design of this invention is simple and easy to prepare. It has a high material removal rate for 4H-SiC, significantly reduces surface roughness after polishing, and is environmentally friendly and pollution-free, possessing the advantages of being environmentally friendly and efficient, and has broad application prospects in high-precision polishing of 4H-SiC.

A method of developing a negative photoresist is provided. The method includes forming a negative photoresist on a patterned layer of a substrate, wherein the negative photoresist is prepared from a material including a solvent, a dissolution inhibitor, a polyethylene glycol, a basic quencher, and a polymer including hydroxyl groups; exposing the negative photoresist to a radiation source to provide the negative photoresist with an exposed portion and a non-exposed portion; and developing the negative photoresist using a solution including tetramethylammonium hydroxide to cause the exposed portion of the negative photoresist to remain and the non-exposed portion to be removed.

This invention discloses a room-temperature curing lithium potassium silicate-based inorganic anti-corrosion coating, its preparation method, and its application, belonging to the field of anti-corrosion coating technology. The room-temperature curing lithium potassium silicate-based inorganic anti-corrosion coating disclosed in this invention, by mass percentage, comprises the following raw materials: 35-45% lithium silicate aqueous solution, 1-10% potassium silicate aqueous solution, 10-15% titanium dioxide, 8-12% calcined kaolin, 15-22% ultrafine heavy calcium carbonate, 3-8% chromium oxide green, 0.2-0.5% dispersant, 0.2-0.5% wetting agent, 0.2-0.5% defoamer, 0.1-0.5% tetramethylammonium hydroxide, 0.05-0.3% aminosilane coupling agent, and the balance deionized water; the pH value of the inorganic anti-corrosion coating is 9-11. This invention solves the technical problem of insufficient thermal stability after mixing existing compound systems with powders.

The application discloses a kind of light low-temperature foaming mine filling material and preparation and application thereof, by A, B component is formed according to mass ratio 1:1.A component includes fly ash, desulfurization gypsum, poly-N-isopropyl acrylamide (PNIPAM), basalt fiber, expanded perlite, foaming agent, auxiliary agent and water;B component includes sodium sulfate, water glass, tetramethylammonium hydroxide and water.By double-particle-size fly ash compounding and "water glass-sodium sulfate-tetramethylammonium hydroxide" ternary excitation system synergy, realize low-temperature rapid foaming curing, 1-day compressive strength ≥3.51MPa, 7 days ≥5.66MPa, dry density 0.40-0.50g / cm 3 , frost resistance coefficient ≥0.94, initial setting 36-41min, final setting 99-106min.The material has light weight, early strength, low cost, environmental protection, effectively solves the problem of traditional material low-temperature failure and strength deficiency, suitable for coal mine goaf low-temperature grouting filling.

The present application relates to wastewater treatment technical field, specifically to a kind of wastewater treatment equipment and process for tetramethylammonium hydroxide production, including the treatment pool with gas main in pool, the top of gas main is equipped with aerator;Aerator includes base pipe, the top of base pipe is equipped with the rectifier plate that is hollow inside and is communicated with base pipe, both board surfaces of rectifier plate are equipped with rectifier hole communicated with the cavity inside rectifier plate;The top of base pipe is also covered with the aeration membrane cover that simultaneously covers rectifier plate entirely, aeration membrane cover and base pipe form aeration chamber communicated with rectifier hole on rectifier plate, the surface of aeration membrane cover is equipped with aeration hole communicated with aeration chamber;Rectifier plate is supported up from inside aeration membrane cover aeration membrane cover, and aeration membrane cover is divided into upper aeration zone and lower aeration zone, when gas is sprayed through aeration hole at lower aeration zone, it will float up, and it will drive aeration membrane cover vibration to carry out the blockage cleaning of aeration hole, and it will move to the upper aeration zone above to carry out aeration compensation.

The utility model discloses a kind of treatment device of tetramethylammonium hydroxide-containing wastewater, including with the first pH adjusting tank of tetramethylammonium hydroxide-containing wastewater pipeline connection, the first pH adjusting tank outlet is connected with the second pH adjusting tank through feeding pipeline, the second pH adjusting tank outlet is connected with resin adsorption column import end through liquid feeding pipeline, the resin adsorption column outlet end is connected with reverse osmosis membrane equipment import through purification pipeline, the concentrated water outlet of reverse osmosis membrane equipment is connected with the feed tank of tetramethylammonium hydroxide production area through tetramethylammonium salt aqueous solution pipeline, the membrane production water of reverse osmosis membrane equipment is connected with biochemical treatment area equipment through pipeline;The utility model makes that tetramethylammonium hydroxide in wastewater is effectively purified and recycled.