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Polishing composition and polishing method

A composition and compound technology, applied in the directions of polishing compositions containing abrasives, surface etching compositions, chemical instruments and methods, etc.

Inactive Publication Date: 2005-09-21
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the polishing compositions of the prior art do not fully satisfy these requirements, so there is still room for improvement.

Method used

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Examples

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Embodiment Construction

[0010] Embodiments of the present invention will be described below.

[0011] Silicon wafers used as semiconductor substrates are manufactured by sequentially applying polishing, etching and edge polishing to wafers cut from silicon single crystal ingots. Generally, in order to process the surface of the silicon wafer into a mirror surface, the silicon wafer is subjected to a chemical mechanical polishing (CMP) process which combines chemical polishing and mechanical polishing.

[0012] In order to improve the polishing efficiency and the surface quality of the polished silicon wafer, the polishing of the silicon wafer usually includes a pre-polishing step of pre-polishing the surface of the silicon wafer and a processing polishing step of processing and polishing the pre-polished silicon wafer surface. In the pre-polishing step, high polishing efficiency is mainly required. In the processing and polishing step, the surface quality of the polished silicon wafer is mainly requ...

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PUM

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Abstract

A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, potassium hydroxide, sodium hydroxide, ammonia, tetramethylammonium hydroxide, piperazine anhydride, or piperazine hexahydrate. The anionic surfactant is at least one selected from a sulfonic acid surfactant, a carboxylic acid surfactant, and a sulfuric acid ester surfactant. The polishing composition can be suitably used in applications for polishing a silicon wafer.

Description

technical field [0001] The invention relates to a polishing composition used for polishing silicon wafers for semiconductor devices and a polishing method using the polishing composition. Background technique [0002] There have been known polishing compositions used for polishing silicon wafers for semiconductor devices. Japanese Patent Application Laid-Open No. 4-291723 discloses a polishing composition containing basic colloidal silica and an anionic surfactant. This prior art polishing composition is used to process the surface of a silicon wafer into a mirror surface. Alkaline colloidal silica can mechanically polish silicon wafers, while anionic surfactants can improve the haze of silicon wafers. [0003] With the high performance and high integration density of semiconductor devices in recent years, the requirements for polishing compositions used for polishing silicon wafers include: [0004] (1) The surface roughness of the silicon wafer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00B44C1/22C09G1/02C09K3/14C09K13/00H01L21/302H01L21/304H01L21/306
CPCC09K3/1463C09G1/02H01L21/02024A63F13/90A63F2009/2457A63F2250/22A63F2009/2451
Inventor 三轮俊博
Owner FUJIMI INCORPORATED
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