Transistor having notched fin structure and method of making the same

Abstract

A transistor includes a notched fin covered under a shallow trench isolation layer. One or more notch may be used, the size of which may vary along a lateral direction of the fin. In some embodiments, The notch is formed using anisotropic wet etching that is selective according to silicon orientation. Example wet etchants are tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH).

Description

Technical field [0001] The present invention relates generally to integrated circuit devices, and more specifically to structures and methods for forming FinFETs. Background technique [0002] In the rapidly growing semiconductor manufacturing industry, complementary metal oxide semiconductor (CMOS) FinFET devices can be used in many logic and other applications and can be integrated into various types of semiconductor devices. FinFET devices generally include semiconductor fins with a high aspect ratio in which the channel and source / drain regions of the transistor are formed. The gate is formed on and along the side of a part of the semiconductor fin. The increased surface area of ​​the channel and source / drain regions in FinFETs leads to faster, more reliable and better controlled semiconductor transistor devices. [0003] However, the current FinFET technology has challenges. For example, the channel is usually formed from a bulk substrate and is susceptible to the channel p...

AI Technical Summary

Problems solved by technology

This effect accelerates the damage of the FinFET

Images