237results about How to "Efficient stripping" patented technology

Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and / or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.

The invention discloses a method for preparing graphene by taking biomass as a raw material. The method comprises the following steps: dipping the biomass in an organic solvent for 1-5 hours, centrifuging, drying, calcining for 1-24 hours at the temperature of 600-1600 DEG C in the presence of inert gas, and cooling, thus obtaining graphene. The method for preparing the graphene by taking the biomass as the raw material has the advantages that cheap and easily available biomass is taken as the raw material, the problem of aftertreatment of dried-up herbaceous plants is effectively solved, and an effective path is provided for high value-added utilization of the herbaceous plants; a preparation technology in each step is controllable and is high in repeatability, the prepared graphene is obvious in exfoliation, and the minimum lamellar thickness is 3nm only; and the method is simple and environmentally friendly, low in capital investment and suitable for large-scale industrial production.

A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.

The invention relates to a preparation method of graphene uniform dispersion, belonging to the technical field of new nano materials. The preparation method comprises the following steps of: (1) preparing aqueous surfactant solution with the concentration of 0.2-20g / L; (2) mixing raw graphite powder with the aqueous surfactant solution according to the concentration of 1-100g / L, forming suspension and adding the suspension into a high-pressure reactor with strirring; (3) adjusting the rotating speed of the high-pressure reactor to be 50-300rpm and the temperature in the reactor to be 100-300 DEG C, carrying out heat preservation treatment on the raw graphite powder for 5-24 hours and then taking out paste; (4) carrying out 1000-2000rpm centrifugation on the paste for 15-45 minutes, and obtaining supernatant solution which is the dispersion with one-layer and multilayer graphene. The preparation method has the advantages that the aqueous surfactant solution used in the preparation process can be recycled without exhaust emission; the used materials are non-corrosive, non-toxic, non-flammable and non-explosive products; the process can not cause large damage to the protogenic conjugated structure of the graphene; and the low cost can be realized, and the graphene dispersion with excellent dispersity and stability can be prepared.

A method for manufacturing a semiconductor device and a cleaning device for stripping resist provide semiconductor device with superior element characteristic in a sufficient yield, in such away that, after dry etching of the lithography process, wet cleaning removes resists, and particles or metal impurities are made to sufficiently remove without damaging fine pattern. The method for manufacturing the semiconductor device comprises: forming a resist pattern on a film provided for the semiconductor substrate, forming a fine pattern of conductive film while performing dry etching using the resist pattern as a mask, stripping the resist pattern by single-wafer system treatment upon supplying resist stripping liquid to fine pattern forming surface of the semiconductor substrate, and carrying out rinse treatment of the semiconductor substrate.

A wide pick-up for a baler includes a crop feed rotor and auger arrangement located at an elevated position rearward of a tined pick-up reel arrangement. Positioned for receiving crop delivered by the reel arrangement, and extending beneath the crop feed rotor and auger arrangement is a crop guide plate arrangement including a central movable crop guide plate portion mounted to be moved vertically between a raised feed position, wherein it is relatively close to a circular path traced by the outer peripheries of the crop feed rotor and the converging augers, and a lowered, crop unplugging position, wherein it is spaced to create a gap between the crop guide plate portion and the crop feed rotor and auger arrangement. Right and left, primary crop stripper plates are respectively mounted to right and left front end regions of the moveable crop feed plate portion, with the primary stripper plates each having an edge located close to the associated auger for preventing crop from being wrapped about the augers when the movable crop guide plate portion is in its normal raised operating position. Right and left secondary crop stripper plates are respectively mounted to right and left fixed walls extending upwardly about the augers from right and left fixed guide plate portions, these secondary stripper plates remaining in place to strip crop from the augers when the central movable crop guide plate portion is lowered.

A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and / or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al- and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.

Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and / or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.

An acidizing formulation for use in the stimulation of hydrocarbon production is stable when packaged and stored as a single fluid for periods exceeding one year. The formulation contains a miscibility solvent which substantially prevents any phase separation between the constituents and lack of dispersion of the additives in the fluid.

This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.

A terminal fitting (10) includes a main body (20) to be coupled to a mating conductor, and a crimp contact section (30) rearward from the main body (20). The crimp contact section (30) is crimped on an end of a core wire (42) in a covered electrical cable (40) so as to surround the end. The core wire (42) includes a plurality of metallic strands (41) and is covered with a sheath (43) to form the covered electrical cable (40). Serrations (34) are provided on a contact surface of the crimp contact section (30) for surrounding the core wire (42). Each serration (34) is a polygonal shaped recess with which the core wire (42) engages upon crimping. Both diagonal corner portions (34C) of each serration (34) are rounded. Thus, the whole periphery of an opening edge around the recess penetrates an oxide layer on a core wire.

A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrof luoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and / or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al- and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.

A photoresist stripper composition comprising 0.5 to 5 % by weight of alkyl ammonium hydroxide; 60 to 90 % by weight of aprotic polar solvent; 0.1 to 3 % by weight of aromatic polyhydric alcohol; 0.1 to 5 % by weight of linear polyhydric alcohol; and 5 to 30 % by weight of water has an excellent capacity for stripping a positive and a negative photoresists, and dose not corrode a metal wiring under the photoresist.

The present invention discloses a passion fruit juice and a preparation method thereof. The preparation method includes the following steps: selecting and washing passion fruits, air-drying, conducting a first freezing, steaming fruits, conducting a second freezing, peeling, thawing, pulping and filtering, and seasoning and filling. By conducting a combined technology of air-drying, freezing, fruit steaming and freezing, an efficient method for removing the skins of passion fruits is achieved, and by using the middle skins, inner skins, pulp and juice of passion fruits, the fruit juice which is sour, sweet, tasty, and rich in nutrition is obtained; and the production method is simple, economical and environmentally friendly, suitable for large-scale industrialized production, and relatively low in production costs.

The invention belongs to the field of welding materials and particularly relates to a high-performance stainless steel surfacing nickel-based special welding wire and a preparation method thereof. Thewelding wire comprises chemical elements including, by mass, not greater than 0.04% of C, 0.1-0.5% of Mn, not greater than 0.001% of P, not greater than 0.001% of S, 0.05-0.1% of Si, 20-25% of Cr, 8-12% of Mo, 2-6% of Nb, 0.2-0.5% of Ti, not greater than 0.001% of Cu, 0.1-0.3% of Al, not greater than 1% of Fe, 0.03-0.08% of Co, 0.05-0.1% of the rare earth element RE, 30-80 ppm of N and the balance Ni and inevitable impurity elements. The preparation method comprises the steps of (1) vacuum electric-furnace smelting; (2) VOD external refining; (3) horizontal continuous casting; (4) tandem rolling; and (5) tandem drawing. The welding wire provided by the invention has the good properties of active gas resistance and reducing acid medium corrosion resistance, the electric arc stability and slag stripping performance are excellent during welding, and welding metal with high strength, good tenacity, flaw resistance, high temperature cracking resistance and corrosion resistance is obtained;and the preparation technology is simple, the raw material and manufacturing cost is low, environmental friendliness is achieved, no pollution is generated, and the welding wire and the preparation method are suitable for industrial volume production and remarkable in economic benefit.

An acidizing formulation for use in the stimulation of hydrocarbon production is stable when packaged and stored as a single fluid for periods exceeding one year. The formulation contains a miscibility solvent which substantially prevents any phase separation between the constituents and lack of dispersion of the additives in the fluid.

Provided is a process and apparatus characterized by a gas distribution plate in which a gas supply manifold directs gas bubbles from the bottom of a process tank upward and between wafers contained in a cassette and supported therewithin. This improved method and apparatus is used for effectively stripping photoresist from the larger semiconductor wafers having dense top conductive patterns with protuberant sidewalls. The method provides a scrubbing action that is parallel to the device array being formed on the wafer's surface. Broadly stated, the method of a chemical action on large substrates supported adjacent respective edge portions thereof in a carrier includes submerging the carrier and substrates supported thereby in a process tank containing a liquid chemical, and a gas distribution plate disposed on the bottom of the tank for directing gas bubbles upward and parallel to the surfaces of each substrate contained in the carrier to ensure that a uniform chemical action occurs.

Disclosed is a remover liquid composition which is excellent in ability of removing a resin layer such as a color filter, a photoresist and an overcoat, while having anti-corrosion effects on metal-containing members such as metal wirings. This remover liquid composition contains an alkanol amine, an aromatic alcohol and an anti-corrosive agent.

The invention relates to a method for separating and purifying bean-kinase in opposition-micelle process, in particular to a new method for extraction and purification of bean-kinase of bean-kinase coarse extraction liquid prepared from fermenting the solid or liquid directly in mother liquid, including the steps of extraction and back extraction; and the related extraction steps contains: proportionally mixing the bean-kinase coarse extraction as aqueous phase with opposition-micelle solution, extracting in 10 to 35 Deg. C, and letting bean-kinase into opposition-micelle solution; back extraction in back extraction liquid, centrifuging in 20 to 45 Deg. C, separating and the purified bean-kinase water solution prepared. It can solve the present problem that craft of purifying bean-kinase is complicated and cycle is long. The recovery ratio of enzyme is more than 80 percent, and the purifying factor more than 3, and at the same time has an effect of concentration decolouration. The cycle is short and facilitating to continuous operation and enlarging by separating and purifying bean-kinase with opposition-micelle process.

The invention discloses an amorphous tetratin triphosphate / phosphorus / few-layer graphene negative material for lithium ion batteries and a preparation method and an application thereof. The negative material is formed by coating amorphous tetratin triphosphate and phosphorus with a few layers of graphene carbon. The preparation method includes the following steps: mixing and ball-milling tin powder and phosphorus powder to obtain tin triphosphate; and mixing the obtained tin triphosphate with expanded graphite and carrying out ball-milling to obtain the amorphous tetratin triphosphate / phosphorus / few-layer graphene negative material. The negative material prepared in the invention is matched with a lithium iron phosphate positive material, and a lithium ion battery assembled by using the negative material and the lithium ferrous phosphate positive material has the advantages of high capacity and stable cycle and has application potential. The preparation method of the invention has theadvantages of simple process, good repeatability, less time consumption and environment friendliness, and is conducive to actual industrial production.

The invention provides a method and apparatus for separating adhesive tapes. The adsorption surface of a peeling roller is used to adsorb a dual-surface adhesive tape on the periphery of a wafer. The peeling roller is rotated, at the same time, the peeling roller is abutted on the wafer, then the peeling roller and wafer are horizontally moved relative to the ground, the dual-surface adhesive tape is peeled off from the wafer, and a start end for peeling is formed. Then the rotation of the peeling roller is stopped. The peeling roller and a handling member are used to hold the start end for peeling, and the dual-surface adhesive tape is peeled off from the wafer. After the dual-surface adhesive tape is completely peeled off, the dual-surface adhesive tape is released from the handling member and is dumped into a belt recovering part.

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

The invention belongs to the technical field of preparation of graphene and particularly relates to a high-efficiency catalysis macroscopic quantity preparation method for graphene oxide or a compound thereof reduced and peeled based on microwaves. Aiming at solving the problems in a process of reducing the graphene oxide by the microwaves that the reaction time is long (30min or more under a 700W air atmosphere and about 15min under a W air atmosphere) and the peeling effect is not ideal, the method adopts flake graphite powder (with the size of 80-120 meshes) which is cheap and easy to obtain, and trace flake graphite powder is added into a microwave reduction system of the graphene oxide or the compound thereof; a partial ultrahigh-energy environment is realized by utilizing plasmas generated under a microwave environment, and the graphene oxide or the compound thereof is reduced and peeled instantly; and meanwhile, the method has a good quasi-single-layer peeling effect. The method has the advantages that the preparation is simple, raw materials are cheap and easy to obtain, no pollution is caused, and the efficiency is high, so that the method has large-scale industrial production values.

The invention relates to a carbon material dispersing agent, a preparation method thereof and a water-borne dispersion body of a stable carbon material containing the dispersing agent. Specifically, the dispersing agent is suitable for dispersion of the carbon material with a graphene structure and contains an amphipathic hyperbranched polymer, wherein the polymer is provided with a framework structure containing amidogen and a monocycle or polycycle, condensed ring or heterocyclic amidogen covalently bonded with the framework structure and non-covalently associated with the graphene structure. The preparation method of the carbon material dispersing agent comprises the steps that (i) a glycidyl compound reacts with polyfunctional amine so as to prepare a hyperbranched polymer with secondary amidogen at the tail end, wherein the amino hydrogen of the polyfunctional amine is excessive compared with the glycidyl mole of the glycidyl compound; (ii) the monocycle or polycycle, condensed ring or heterocyclic amidogen non-covalently associated with the graphene structure is introduced into the hyperbranched polymer through reaction with the secondary amidogen, and accordingly the dispersing agent containing the amphipathic hyperbranched polymer is prepared.

The invention discloses a double-pyrazole extracting agent derived from o-phenanthroline with the following structural general formula, and a preparation method and application of the double-pyrazoleextracting agent. In the formula, R is any one selected from n-octyl, n-butyl, isobutyl, ethyl, pyridyl and phenyl. The double-pyrazole extracting agent derived from the o-phenanthroline provided by the invention has a unique rigid structure and an alkyl chain for improving the solubility, and simultaneously only four elements of C, H, O and N are contained, so that the extraction kinetics of a separation extraction system can be greatly increased, the extraction capacity of an organic phase can be increased, secondary pollutants cannot be produced, and thus the environmental protection is facilitated. The extraction agent can be used to separate Ans (actinide elements) / Lns (lanthanide elements), and can not only form a separation extraction system of the Ans / Lns, but also can be used to form a separation reverse extraction system of the Ans / Lns.

The invention discloses a tool for distribution line live work in a power system, in particular a stripping tool for an overhead wire insulating layer. The stripping tool comprises a pair of long and narrow clamp bodies; the front section of each clamp body is provided with a clamp head, and the rear section of the clamp body is provided with a clamp handle; the pair of clamp bodies are intersected and hinged with each other at the hinging points in the middle parts; the rear section of each clamp handle is provided with an insulating handle; a longitudinal blade of which the cutting edge is parallel to the length direction of the corresponding clamp body is arranged on one sectional clamp handle behind the hinging point; a transverse rear V-shaped groove is formed on the other sectional clamp handle opposite to the longitudinal blade; a transverse blade of which the cutting edge is vertical to the length direction of the corresponding clamp body is arranged on one sectional clamp head in front of the hinging point; and a transverse front V-shaped groove is formed on the other sectional clamp handle opposite to the transverse blade. The tool greatly improves the work efficiency, reduces the physical consumption of a worker as well as the potential hazard, enhances the live work frequency and effectively enhances the power supply reliability.