Photoresist stripper composition

A technology of stripping agent and composition, applied in optics, photomechanical equipment, photosensitive material processing, etc., can solve the problems of manufacturing cost and time increase, and achieve excellent stripping effect

Active Publication Date: 2013-01-23
ENF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, if there is no common stripper for positive and negative photoresists, separate stri

Method used

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  • Photoresist stripper composition

Examples

Experimental program
Comparison scheme
Effect test

Example

[0033] Examples 1 to 9 and Comparative Examples 1 to 21

[0034] The compositions of Examples 1 to 9 and Comparative Examples 1 to 21 were prepared by mixing the components shown in Table 1.

[0035] The mixing is carried out at room temperature for 1 hour or more to fully dissolve the solid corrosion inhibitor, and then filtered through a Teflon filter.

Example Embodiment

[0036] Experimental example

[0037] The peeling ability and corrosion inhibition ability of the compositions obtained in Examples 1 to 9 and Comparative Examples 1 to 21 are evaluated as follows:

[0038] (1) Preparation of positive photoresist samples

[0039] A positive photoresist (THMR-iP 3300, TOK) is coated on a silicon wafer coated with silicon nitride, and then a photoresist pattern is formed through an exposure and development process. The pattern was transferred to the silicon nitride layer under the photoresist by dry etching to obtain a positive photoresist sample.

[0040] (2) Preparation of negative photoresist samples

[0041] Negative photoresist (PMER N-HC600, TOK) is coated on a silicon wafer, and then a photoresist pattern is formed through exposure, development and baking processes. Aluminum and titanium are sequentially spread on the silicon wafer to obtain a polished negative photoresist pattern.

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PUM

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Abstract

A photoresist stripper composition comprising 0.5 to 5 % by weight of alkyl ammonium hydroxide; 60 to 90 % by weight of aprotic polar solvent; 0.1 to 3 % by weight of aromatic polyhydric alcohol; 0.1 to 5 % by weight of linear polyhydric alcohol; and 5 to 30 % by weight of water has an excellent capacity for stripping a positive and a negative photoresists, and dose not corrode a metal wiring under the photoresist.

Description

technical field [0001] The invention relates to a photoresist stripper composition used for removing photoresist during the manufacturing process of semiconductor devices, LED devices or LCD devices. Background technique [0002] Typically, microcircuit semiconductor devices, LED devices or LCD devices are produced via a series of photolithographic methods. The photolithography method includes the steps of: forming a metal layer or an insulating layer on a substrate; spreading a photoresist on the metal layer; selectively exposing the photoresist through a patterned mask to form a desired photoresist pattern; and development processing. In this method, a metal layer or an insulating layer is patterned through dry etching or wet etching by using the photoresist pattern as a mask, and then the photoresist pattern is removed by a lift-off method. [0003] According to the change in the ability to dissolve in a developer when exposed to light, photoresists are divided into two...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/425G03F7/426
Inventor 朴永真韩斗锡李相大申孝燮
Owner ENF TECH
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