Method for preparing carbon-silicon carbide composite material by using chemical gas-phase permeation method
A technology of chemical vapor infiltration and composite materials, which is applied in the field of composite material preparation, can solve the problems of complex preparation process and high cost of three-dimensional needle-punched carbon felt, and achieve the effect of improving interlayer shear strength, compensating for poor mechanical properties and high toughness
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Embodiment 1
[0011] Place the carbon fiber braided body substrate in the deposition chamber and perform the following steps:
[0012] Steps for depositing carbon particles: There are two gas paths in the deposition chamber, one path uses methane as the reaction gas, the flow rate of methane gas is controlled at 200ml / min, the other path uses argon gas as the diluent gas, the flow rate of argon gas is 600ml / min, the deposition pressure in the deposition chamber is 6kPa, the deposition temperature is 900°C, and the deposition time is 3h;
[0013] Deposition of silicon carbide whiskers: change the two gas paths of the deposition chamber, one path uses trichloromethylsilane as the reaction gas, hydrogen as the carrier gas, and place methyltrichlorosilane in an evaporation kettle heated by a water bath. The temperature of the water bath is 35°C, the pressure of the evaporator is controlled at 0.2MPa, the total flow of hydrogen and trichloromethylsilane is controlled at 200ml / min, the hydrogen i...
Embodiment 2
[0015] Place the carbon fiber braided body substrate in the deposition chamber and perform the following steps:
[0016] Steps for depositing carbon particles: There are two gas paths in the deposition chamber, one path uses methane as the reaction gas, the flow rate of methane gas is controlled at 400ml / min, the other path uses argon gas as the diluent gas, the flow rate of argon gas is 800ml / min, the deposition pressure in the deposition chamber is 7kPa, the deposition temperature is 1000°C, and the deposition time is 12h;
[0017] Deposition of silicon carbide whiskers: change the two gas paths of the deposition chamber, one path uses trichloromethylsilane as the reaction gas, hydrogen as the carrier gas, and place methyltrichlorosilane in an evaporation kettle heated by a water bath. The temperature of the water bath is 40°C, the pressure of the evaporator is controlled at 0.3MPa, the total flow of hydrogen and trichloromethylsilane is controlled at 300ml / min, the hydrogen...
Embodiment 3
[0019] Place the carbon fiber braided body substrate in the deposition chamber and perform the following steps:
[0020] Steps for depositing carbon particles: There are two gas paths in the deposition chamber, one path uses methane as the reaction gas, the methane gas flow rate is controlled at 350ml / min, the other path uses argon gas as the diluent gas, the argon gas flow rate is 700ml / min, the deposition pressure in the deposition chamber is 6.7kPa, the deposition temperature is 950°C, and the deposition time is 8h;
[0021] Deposition of silicon carbide whiskers: change the two gas paths of the deposition chamber, one path uses trichloromethylsilane as the reaction gas, hydrogen as the carrier gas, and place methyltrichlorosilane in an evaporation kettle heated by a water bath. The temperature of the water bath is 38°C, the pressure of the evaporator is controlled at 0.3MPa, the total flow of hydrogen and trichloromethylsilane is controlled at 250ml / min, the hydrogen is se...
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