Method of preparing carbon-carbon composite material surface silicon carbide nano wire

A technology of silicon carbide nanowires and carbon composite materials, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of affecting the mechanical properties of silicon carbide nanomaterials, difficult separation of nanowires and particles, and synthesis process Complicated problems, to achieve the effect of low requirements, low deposition temperature, and simple synthesis process

Inactive Publication Date: 2006-09-20
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, some methods need to be carried out at a very high temperature; some methods have a complex synthesis process and require a multi-step synthesis process; Particles are difficult to separate; in addition, some methods need to add metal catalysts to the reaction chamber. After the preparation, the catalys

Method used

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  • Method of preparing carbon-carbon composite material surface silicon carbide nano wire
  • Method of preparing carbon-carbon composite material surface silicon carbide nano wire
  • Method of preparing carbon-carbon composite material surface silicon carbide nano wire

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Embodiment Construction

[0025] The present invention will be further described now in conjunction with accompanying drawing:

[0026] 500ml CH 3 SiCl 3 Pour into the bubbler, intend to pass through the H 2 Bubbling way will CH 3 SiCl 3 brought into the reaction chamber, CH 3 SiCl 3 The performance indicators are listed in Table 1.

[0027]

Element

color

melting point

(℃)

boiling point

(℃)

ignite

(℃)

heat capacity

(kJ·kg -1 k -1 )

Gas heat capacity

(kJ·kg -1 k -1 )

Latent heat

(kJ·kg -1 )

CH 3 SiCl 3 >98%

White

-77.5

66.1

455

1.27

0.82

196.78

[0028] Set the density to 1.78g / cm 3 The carbon / carbon composite material was cut into 15 × 5 × 5 mm samples with a hacksaw, polished and polished with No. 400, No. 800 and No. 1000 sandpaper respectively, washed with distilled water, and dried in an oven at 100 ° C. Deposit the substrate. ...

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Abstract

This invention relates to a method for manufacturing SiC nanowires on the surface of C/C composite, which comprises the steps of: (1) polishing the C/C composite, washing with distilled water, and drying; (2) binding the treated C/C composite with carbon fibers, and suspending in a vertical chemical vapor deposition furnace; (3) evacuating the furnace, pumping Ar into the furnace to normal pressure, and repeating for three times; (4) applying electricity, heating, and pumping H2 for pretreatment; (5) adjusting the flow rates of Ar, H2 and methyl trichlorosilane when the furnace temperature reaches the predetermined deposition temperature, keeping the temperature for deposition, the turning off the power and cooling naturally to obtain a layer of SiC nanowires on the surface of the material. The method has such advantages as simple process, no additive, low deposition pressure and temperature. The morphology and purity of the synthesized SiC nanowires can be effectively controlled by adjusting the deposition factors.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide nanowires on the surface of carbon / carbon composite materials, which is a method for controlling the morphology and purity of silicon carbide nanowires on the surface of carbon / carbon composite materials, and is used for preparing high-quality silicon carbide nanowires. Wire. Background technique: [0002] Silicon carbide has many excellent properties, such as high strength, high hardness, low density, excellent resistance to oxidation and corrosion, low coefficient of thermal expansion and high thermal conductivity. In addition, silicon carbide is also a broadband semiconductor material with high breakdown electric field, high electron saturation rate and high radiation resistance. Silicon carbide nanowires also showed more excellent performance. Recent research results have shown that the elasticity and strength of SiC nanowires are much greater than micron-scale SiC whiskers and bulk ...

Claims

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Application Information

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IPC IPC(8): C23C16/32C23C16/455
Inventor 李贺军付前刚史小红李克智张守阳
Owner NORTHWESTERN POLYTECHNICAL UNIV
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