Method of preparing carbon-carbon composite material surface silicon carbide nano wire

Abstract

This invention relates to a method for manufacturing SiC nanowires on the surface of C / C composite, which comprises the steps of: (1) polishing the C / C composite, washing with distilled water, and drying; (2) binding the treated C / C composite with carbon fibers, and suspending in a vertical chemical vapor deposition furnace; (3) evacuating the furnace, pumping Ar into the furnace to normal pressure, and repeating for three times; (4) applying electricity, heating, and pumping H2 for pretreatment; (5) adjusting the flow rates of Ar, H2 and methyl trichlorosilane when the furnace temperature reaches the predetermined deposition temperature, keeping the temperature for deposition, the turning off the power and cooling naturally to obtain a layer of SiC nanowires on the surface of the material. The method has such advantages as simple process, no additive, low deposition pressure and temperature. The morphology and purity of the synthesized SiC nanowires can be effectively controlled by adjusting the deposition factors.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide nanowires on the surface of carbon / carbon composite materials, which is a method for controlling the morphology and purity of silicon carbide nanowires on the surface of carbon / carbon composite materials, and is used for preparing high-quality silicon carbide nanowires. Wire. Background technique: [0002] Silicon carbide has many excellent properties, such as high strength, high hardness, low density, excellent resistance to oxidation and corrosion, low coefficient of thermal expansion and high thermal conductivity. In addition, silicon carbide is also a broadband semiconductor material with high breakdown electric field, high electron saturation rate and high radiation resistance. Silicon carbide nanowires also showed more excellent performance. Recent research results have shown that the elasticity and strength of SiC nanowires are much greater than micron-scale SiC whiskers and bulk ...

AI Technical Summary

Problems solved by technology

For example, some methods need to be carried out at a very high temperature; some methods have a complex synthesis process and require a multi-step synthesis process; Particles are difficult to separate; in addition, some methods need to add metal catalysts to the reaction chamber. After the preparation, the catalyst droplets exist at the end of the nanowires, which greatly affects the mechanical properties of silicon carbide nanomaterials.

So far, there has not been any report on the preparation of high-quality silicon carbide nanowires on the surface of carbon / carbon composites by atmospheric pressure chemical vapor deposition.

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