The invention discloses the method of wiping off the exterior 
metal of the 
silicon abandoned piece and reclaiming the 
noble metal platinum. The 
semiconductor parts of an apparatus and the 
semiconductor integrate circuit abandoned 
silicon piece are dipped in the 
hydrochloric acid or the dilute 
vitriol to wipe off the 
metal alive than the 
hydrogen, the 
nitric acid is used to melt the cooper or the silver on the 
silicon piece, the combination of thick 
hydrochloric acid and the thick 
nitric acid is used to melt the gold and the 
platinum on the surface of the silicon piece, then the combination of the 
hydrofluoric acid and the 
nitric acid is used to melt the 
metal silicon material on the surface of the silicon piece, the material silicon piece is gained with the cleaning, the 
drying or the setting off. The metal alive than the 
hydrogen is added in the said 
silver nitrate solution to 
gain the silver by the permutation, the 
aqua regia containing the gold and the 
platinum is heated or is added the alkali to get rid of the excessive 
hydrochloric acid and the nitric acid, the 
copper is added in the residual solution to 
gain the gold or the platinum by the permutation. The invention can wipe off the metal 
impurity and the metal silicon material on the surface of the abandoned silicon piece effectively, the disposed silicon piece can be used for the material of the sun energy silicon 
single crystal, the 
solar cell silicon piece can be gained by the more process, the 
noble metal is reclaimed, so it is useful for circle utilize of the resource.