This invention relates to the field of liquid chamber (LC)
electron microscopy, specifically to an in-situ LC
electron microscopy characterization and
screening method for
abrasive particles in
integrated circuit CMP
polishing slurries. Addressing the problems of high
viscosity, high
hardness of
abrasive particles and clusters, complex systems, and easy breakage of LC windows in CMP
polishing slurries, this invention improves the stability of LC packaging and observation through pretreatment,
liquid injection volume control, vacuum stabilization, and window thickness optimization. This method performs in-situ characterization of CMP
polishing slurry abrasive particles in a real
liquid phase environment, obtaining information on abrasive particle size, morphology, agglomeration and dispersion state, dynamic behavior, and composition. It also establishes the correlation between abrasive particle
liquid phase structure parameters and CMP polishing performance, enabling
performance prediction and screening of polishing slurries. Characterization results of two CMP polishing slurries from different sources but with identical nominal parameters show significant differences in the true morphology, size distribution, and agglomeration state of the abrasive particles in the
liquid phase. This demonstrates that the method of this invention can reveal the true liquid
phase state that traditional dry-state characterization and average statistical characterization cannot reflect, providing a basis for polishing
slurry performance evaluation, defect risk analysis, and screening.