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76 results about "Kapton" patented technology

Kapton is a polyimide film developed by DuPont in the late 1960s that remains stable across a wide range of temperatures, from −269 to +400 °C (−452 to 752 °F; 4 to 673 K). Kapton is used in, among other things, flexible printed circuits (flexible electronics) and thermal blankets used on spacecraft, satellites, and various space instruments.

Preparation method of atomic oxygen-resistant polyimide hybrid films containing POSS (polyhedral oligomeric silsesquioxanes) structures

InactiveCN102731809AImprove anti-atomic oxygen performanceMild reaction conditionsSilicon organic compoundsAviationAlcohol
The invention relates to a preparation method of atomic oxygen-resistant polyimide hybrid films containing POSS structures. The preparation method comprises the following steps: reacting phenyl-containing monomers with aminopropyl-containing silane monomers in an alcohol/water cosolvent system under the action of a catalyst, volatilizing the solvent, washing, lyophilizing to obtain diamine POSS, modifying a polyimide material with the diamine POSS to prepare polyamide acid containing the POSS structure, and carrying out thermal imidization to obtain a series of polyimide hybrid films with different contents of the diamine POSS. Reaction conditions for synthesizing the diamine POSS are mild, the cost is low, and the POSS structure is introduced to the main chain of a polyimide molecule in a chemical bond manner, so the polyimide material has an excellent intrinsic atomic oxygen resistance, the hybrid films have excellent comprehensive performances, and the atomic oxygen resistances of the hybrid films are 6 times higher than that of unmodified Kapton polyimide films, thereby the hybrid films of the invention have important meanings to the development of the aviation and space industry.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Preparation method of polyimide film with ultralow dielectric constant and low dielectric loss

InactiveCN105601964AIncrease internal free volumeLower D <sub>k</sub>Heat resistanceDielectric loss
The invention relates to a preparation method of a polyimide film with an ultralow dielectric constant and low dielectric loss. HBPSi (Hyperbranched Polysiloxane) is first obtained by adopting a hydrolytic cocondensation method and multistep purification; finally, an HBPSi structure is introduced into a PI (Polyimide) molecular main chain in the form of a chemical bond; the modification on a PI material on a molecular level is realized; the dielectric constant of the PI material is obviously decreased; the inherent advantage of the PI material is maintained better. A PI film is excellent in dielectric property, favorable in heat resistance, outstanding in mechanical strength, low in water absorption, high in surface evenness, mild in reaction condition in a preparation process and lower in research and development costs, and is beneficial to large-scale commercial production. In comparison with a Kapton standard film which is currently used generally, the dielectric constant of an HBPSi-PI film is decreased by 30 percent to 40 percent in an equal test condition; a lowest dielectric constant is even approximate to 2.0; the level of the ultralow dielectric constant is reached; the active demand of the development of a microelectronic industry in the future can be met.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Method of manufacturing continuous disk winding for high-voltage superconducting transformers

Disclosed herein is a method of manufacturing a continuous disk winding for high-voltage superconducting transformers that has special features of no joint and low loss, which are advantages of a layer winding, while being formed in the shape of a disk winding, which is advantageous in voltage distribution and insulation. The method includes lapping a high-temperature superconducting wire using Kapton films to apply multiple layers of insulation around the high-temperature superconducting wire, fixing one end of the high-temperature superconducting wire to a current inlet terminal of a bobbin, to the lower end of which is attached a fixing plate, which has the current inlet terminal, and winding the high-temperature superconducting wire on the bobbin by the predetermined number of turns, fitting a disk having a slit formed therein onto the bobbin to form high-temperature superconducting wire layers, inserting the high-temperature superconducting wire into a front end of the slit of the fitted disk and moving high-temperature superconducting wire to a rear end of the slit such that the high-temperature superconducting wire can be wound on the next layer by the predetermined number of turns, fitting a plurality of disks, each of which has a slit formed therein, onto the bobbin at predetermined intervals to form a plurality of high-temperature superconducting wire layers, and repeatedly winding the high-temperature superconducting wire for each disk such that the high-temperature superconducting wire is wound from one end of the bobbin to the other end of the bobbin, and, after the winding operation is completed, fixing the other end of the high-temperature superconducting wire to a current inlet terminal of another fixing plate attached to the upper end of the bobbin.
Owner:SUNAM

Interconnection of lead frame to die utilizing flip chip process

Embodiments in accordance with the present invention relate to techniques which avoid the problems of deformation in the shape of a solder connection in a flip chip package, resulting from solder reflow. In one embodiment, a solder-repellent surface is created adjacent to the solder to constrain the reflow and thereby maintain the vertical profile of the solder. Examples of such a solder-repellent surface include an oxide (such as Brown Oxide) of the lead frame, or a tape (such as Kapton) which is used as a dam bar to control / constrain the solder flow on the leads prior to the encapsulation step. In another embodiment, the solder connection may be formed from at least two components. The first component may reflow at high temperatures to provide the necessary adhesion between solder ball and the die, with the second component reflowing at a lower temperature to provide the necessary adhesion between the solder ball and the leads. An example of such multi-component connections include a first high temperature reflow solder ball paired with a second low temperature reflow solder. Another example includes a solder ball with a hard core (such as Cu, stainless steel, or a plastic material stable at high temperatures) coated with a lower temperature reflow material.
Owner:GEM SERVICES

Model construction method for researching thermodynamic properties of repeated polyimide system by adopting system coarse graining molecular dynamics

The invention discloses a model construction method for researching thermodynamic properties of a repeated polyimide system by adopting system coarse graining molecular dynamics. The method comprisesthe following steps: a) carrying out all-atomic dynamics simulation on a melt system consisting of dianhydride and diamine used for synthesizing polyimide to obtain the equilibrium conformation and density of the melt system; b) adopting a reasonable system coarse graining model mapping scheme, and analyzing to obtain a bonding conformation distribution function and a radial distribution functionRDF of all-atomic dynamics simulation; c) carrying out Boltzmann transformation on the bonded conformation distribution function and the radial distribution function RDF of the all-atomic dynamics simulation obtained in the step b), so as to carry out coarse graining model molecular dynamics simulation; and d) obtaining a coarse graining potential function of the polyimide molecules. According tothe method disclosed by the invention, a Kapton film formed by polymerizing benzene type tetracarboxylic dianhydride and 4, 4 '-diaminodiphenyl ether is taken as an example, and through the steps, thermodynamic properties (density, glass transition temperature and the like) matched with an experiment are obtained.
Owner:INST OF CHEM CHINESE ACAD OF SCI +1

Method and apparatus for probing at arbitrary locations within an inaccessible array of leads the solder balls or pins actually connecting a VLSI IC package to a substrate or socket

A probe for an array of interconnecting leads between a PCA and an IC has one or more contacts extending laterally from or plated upon one or more arms formed of a flexible printed circuit, and connected by traces along the arm(s) to a header that itself affords connection to measurement equipment. The flexible printed circuit is thin enough to loosely slide between the top of the PCA or PCB and the bottom of the IC. The arm or arms is / are narrow enough to slide between the adjacent leads forming the array, while the normally flat contacts will successively interfere with, to engage and electrically contact, consecutive layers of leads as the probe is progressively inserted. An arm is not so stiff that it cannot yield by a slight compressive warping as the contacts encounter leads. Indexing may be ‘by feel’ or by visible indicia along a top surface of the probe or by a reticle device that moves over the top of the IC, which then has a pattern of indicia corresponding to lead location. Forming the shape of a Kapton substrate may also include use of a CVL operating in the range of 250 nm to 290 nm for the creation of extended copper contacts by the removal of underlying Kapton. Plating processes may also be used in the fabrication of (non-extended) wrap-around contacts at the edges of the Kapton.
Owner:AGILENT TECH INC
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