This application relates to the field of
semiconductor packaging technology, and particularly to modified
copper paste, its preparation method, and its application. The modified
copper paste comprises a
copper coordination compound, submicron-sized copper
powder, micron-sized copper
powder, resin, resin curing agent, and
solvent. The copper coordination compound exhibits high dispersibility, and during the subsequent
sintering process, nano-sized copper particles are generated in situ throughout the copper paste, leveraging the nanoscale effect to effectively reduce the required
sintering temperature and pressure. Through the multi-scale
particle size distribution of micron-sized, submicron-sized, and nano-sized copper
powder, effective filling between particles is achieved during
sintering, forming a gradient
particle size distribution and achieving the densest packing. This not only significantly improves the density of the solder layer and the
interfacial bonding strength, enhancing connection strength and reliability, but also optimizes the conductive path. As a
semiconductor bonding material, this modified copper paste exhibits high
bonding strength, lifespan, and
conductivity after sintering, significantly improving the quality of power packaging.