Preparation method of polyimide film with ultralow dielectric constant and low dielectric loss

An ultra-low dielectric constant, polyimide film technology, applied in the preparation of hyperbranched polysiloxane, ultra-low dielectric constant, low dielectric loss polyimide film preparation field, can solve a wide range of limitations Application, poor mechanical properties, high research and development costs, to achieve the effect of good film transparency, low research and development costs, and increased internal free volume

Inactive Publication Date: 2016-05-25
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mechanical properties of this PI material are not good, and the process of synthesizing POSS is relatively

Method used

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  • Preparation method of polyimide film with ultralow dielectric constant and low dielectric loss
  • Preparation method of polyimide film with ultralow dielectric constant and low dielectric loss
  • Preparation method of polyimide film with ultralow dielectric constant and low dielectric loss

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] (1) Synthesis of amino-containing hyperbranched polysiloxane (HBPSi)

[0046] Add 20 g of tetrahydrofuran, 1.4476 g of SiCl in sequence to a container equipped with a magnetic stirrer 4 , 16.8964gPTMS and 1.6559gAPSM start stirring at the same time and cool down the system. When the temperature of the system dropped to 2° C., 3.68 g of distilled water was dropped into the above system within 1 h. After the end, keep the reaction conditions unchanged, continue stirring for 1 h, then raise the temperature to 40° C., and continue the reaction for 5 h. After the reaction was completed, the volatile matter was removed by rotary evaporation, the temperature was controlled at 60° C., and the pressure was 0.1 atmosphere, and the crude product E was obtained. Product E was washed twice with 50 mL of ethanol / toluene mixture (volume ratio of ethanol and toluene: 3:1) at 0°C to obtain product F. Dissolve the product F in 20 mL of chloroform and filter it with a tetrafluoro filte...

Embodiment 2

[0050] (1) Synthesis of amino-containing hyperbranched polysiloxane (HBPSi)

[0051] Add 20 g of chloroform, 1.4628 g of TEOS, 17.31 g of PTES and 1.66 g of APSE in turn into a container equipped with a magnetic stirrer, and simultaneously start stirring and cool down the system. When the temperature of the system dropped to 2° C., 3.52 g of distilled water was dropped into the above system within 1 h. After the end, keep the reaction conditions unchanged, continue stirring for 2 h, then raise the temperature to 45° C., and continue the reaction for 6 h. After the reaction was completed, the volatile matter was removed by rotary evaporation, the temperature was controlled at 60° C., and the pressure was 0.1 atmosphere, and the crude product E was obtained. Product E was washed twice with 50 mL of ethanol / toluene mixture (volume ratio of ethanol and toluene: 3:1) at 0°C to obtain product F. Dissolve the product F in 20 mL of chloroform and filter it with a tetrafluoro filter ...

Embodiment 3

[0055] (1) Synthesis of amino-containing hyperbranched polysiloxane (HBPSi)

[0056] Add 20g of chloroform, 5.7677g of TEOS, 25.8069g of MTMS and 8.4252g of UP-900M in turn into a container equipped with a magnetic stirrer and start stirring at the same time to cool down the system. When the temperature of the system dropped to 0° C., 4.59 g of distilled water was dropped into the above system within 1 h. After the end, keep the reaction conditions unchanged, continue stirring for 2 h, then raise the temperature to 40° C., and continue the reaction for 6 h. After the reaction was completed, the volatile matter was removed by rotary evaporation, the temperature was controlled at 60° C., and the pressure was 0.1 atmosphere, and the crude product E was obtained. Product E was washed twice with 50 mL of ethanol / toluene mixture at 0°C (the volume ratio of ethanol and toluene was 3:2) to obtain product F. Dissolve the product F in 20 mL of chloroform and filter it with a tetrafluo...

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Abstract

The invention relates to a preparation method of a polyimide film with an ultralow dielectric constant and low dielectric loss. HBPSi (Hyperbranched Polysiloxane) is first obtained by adopting a hydrolytic cocondensation method and multistep purification; finally, an HBPSi structure is introduced into a PI (Polyimide) molecular main chain in the form of a chemical bond; the modification on a PI material on a molecular level is realized; the dielectric constant of the PI material is obviously decreased; the inherent advantage of the PI material is maintained better. A PI film is excellent in dielectric property, favorable in heat resistance, outstanding in mechanical strength, low in water absorption, high in surface evenness, mild in reaction condition in a preparation process and lower in research and development costs, and is beneficial to large-scale commercial production. In comparison with a Kapton standard film which is currently used generally, the dielectric constant of an HBPSi-PI film is decreased by 30 percent to 40 percent in an equal test condition; a lowest dielectric constant is even approximate to 2.0; the level of the ultralow dielectric constant is reached; the active demand of the development of a microelectronic industry in the future can be met.

Description

technical field [0001] The invention belongs to a preparation method of a polyimide film, in particular to a preparation method of an ultra-low dielectric constant and low dielectric loss polyimide film, and relates to the preparation of amino-modified hyperbranched polysiloxane (HBPSi) And the preparation method of ultra-low dielectric constant and low dielectric loss polyimide film containing HBPSi structure. Background technique [0002] Microelectronics technology is the core technology of modern science and technology information industry, and it is a new technology developed along with the research and development of integrated circuits, especially VLSI. In recent years, in order to further increase the signal transmission speed of integrated circuits in portable communication devices, microelectronics technology is gradually developing towards higher integration, lower power consumption and higher performance. However, while increasing the integration level of integr...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08G73/10C08G83/00
CPCC08J5/18C08G73/106C08G83/005C08J2379/08
Inventor 张秋禹雷星锋乔明涛田力冬
Owner NORTHWESTERN POLYTECHNICAL UNIV
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