Silicon waste-slice surface metal removal and noblemetal silver-platinum-gold recovery method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 浙江东源电子有限公司
- Publication Date
- 2006-10-25
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to a method for removing metal on the surface of silicon waste sheets and recovering precious metal silver and platinum Background technique
[0002] In the semiconductor discrete device (referred to as semiconductor device) and semiconductor integrated circuit industries, there will be various waste silicon wafers caused by device failure due to various reasons, and some of the silicon wafers have been deposited on the surface of metal aluminum, copper, silver, Platinum, gold, etc. When recycling these waste silicon wafers, the metal on the surface of these silicon wafers must be removed first, otherwise, these silicon wafers will be contaminated by metal in the subsequent processing process, which will seriously affect quality of silicon wafers. On the other hand, the precious metal silver, platinum, and gold resources on the surface of silicon wafers are very precious and must be recycled. Contents of the invention
[0003] ...