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Sapphire polishing solution and preparation method thereof

A technology for sapphire and polishing liquid, applied in the field of polishing liquid, can solve the problems of low polishing efficiency, difficult dispersion, scratching of sapphire, etc., and achieve the effects of high practical value, good dispersibility and fast polishing rate

Inactive Publication Date: 2018-08-03
HEFEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these two methods have relatively large defects. Due to its low hardness, silicon oxide has strong reactivity with sapphire, so the polishing efficiency is relatively low. Generally, the polishing rate of silicon oxide for C-oriented sapphire can only maintain At a rate of 5 microns / hour; alumina has high hardness, and the polishing rate can reach 12 microns / hour, but it is difficult to disperse into a stable, high-concentration colloidal system, resulting in scratches on the surface of sapphire

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A kind of sapphire polishing liquid, its raw material comprises by weight: 100 parts of composite abrasive, 5 parts of sodium hydroxide, 0.01 part of sodium polyacrylate, 0.001 part of JFC surfactant.

[0025] The composite abrasive is prepared by the following process: 2kg of silicon carbide with a particle size of 30nm, 10kg of silica sol with a particle size of 5nm at a concentration of 40% by mass, and 15g of sodium polyacrylate are added to a wet ball mill, and HCl is added to adjust the pH value to 2.5, ball milling for 1 hour to prepare preform A with a concentration of 50% by mass; dilute preform A with water to form a dispersion with a concentration of 2% by mass, add 0.01g of calcium nitrate at room temperature, heat up to 80°C, and stir for 0.5h , then dropwise add silicic acid with a mass percentage concentration of 2% at a rate of 2.2ml / min to grow 10nm in particle size, add sodium hydroxide to adjust the pH value to 8, and age for 1h to prepare prefabricate...

Embodiment 2

[0028] A kind of sapphire polishing liquid, its raw material comprises by weight: 100 parts of composite abrasive, 12 parts of potassium hydroxide, 1 part of sodium hexametaphosphate, 0.1 part of MOA-9 surfactant.

[0029] The composite abrasive is prepared by the following process: 2kg of a-alumina with a particle size of 200nm, 20kg of silica sol with a particle size of 50nm at a concentration of 5% by mass, and 25g of sodium hexametaphosphate are added to a wet ball mill, and HCl is added to adjust The pH value is 5.5, and the prefabricated material A with a mass percentage concentration of 15% is obtained by ball milling for 3 hours; the preformed material A is diluted with water to a dispersion liquid with a mass percentage concentration of 7%, and 0.6g of magnesium chloride is added at room temperature, and the temperature is raised to 100°C, and stirred 1h, then add dropwise at a rate of 4.2ml / min silicic acid with a mass percentage concentration of 6% to grow 20nm in pa...

Embodiment 3

[0032] A kind of sapphire polishing liquid, its raw material comprises by weight: 100 parts of composite abrasives, 6 parts of sodium hydroxide, 0.1 part of sodium citrate, 0.01 part of JFC surfactant.

[0033] The composite abrasive is prepared by the following process: 2kg of boron carbide with a particle size of 50nm, 10kg of silica sol with a particle size of 16nm and 20g of sodium citrate with a mass percent concentration of 20% are added to a wet ball mill, and HCl is added to adjust the pH value to 4.5, ball milling for 2 hours to obtain a preform A with a concentration of 33% by mass; dilute the preform A with water to a dispersion with a concentration of 5% by mass, add 0.3 g of aluminum chloride at room temperature, and heat up to Stir at 95°C for 1 hour, then dropwise add silicic acid with a mass percent concentration of 6% at a rate of 3.0ml / min, the particle size grows to 12nm, add sodium hydroxide to adjust the pH value to 9, and age for 1.5 hours to prepare prefa...

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Abstract

The invention discloses a sapphire polishing solution. The sapphire polishing solution is prepared from the following raw materials: a composite abrasive, a pH (Potential of Hydrogen) regulator, a dispersant and a surfactant, wherein the composite abrasive is prepared by adopting the following technology: adding an abrasive, silica sol and the dispersant in a wet ball mill, regulating pH value tobe 2.5 to 8.5, and carrying out ball milling, thus obtaining a prefabricated material A; adding water for diluting the prefabricated material A into a dispersing solution of which the mass percent concentration is 2 to 7 percent, adding metal salt under room temperature, rising the temperature to 80 to 100 DEG C, stirring for 0.5 to 1 hour, then dropwise adding silicic acid for promoting growth ofparticle size, regulating the pH value to be 8 to 12, and aging, thus obtaining a prefabricated material B; concentrating the prefabricated material B, thus obtaining the composite abrasive. The sapphire polishing solution disclosed by the invention has high polishing efficiency on sapphire, cannot scratch the sapphire, and is simple and convenient in preparation technology and lower in cost.

Description

technical field [0001] The invention relates to the technical field of polishing liquid, in particular to a sapphire polishing liquid and a preparation method thereof. Background technique [0002] Due to its high hardness and high corrosion resistance, sapphire is more and more widely used in LED substrates, SOS and mobile phone screen films. At present, silicon oxide is used as abrasive in the market to achieve global planarization of sapphire, and a few manufacturers use high-hardness alumina as abrasive to achieve rapid planarization. However, these two methods have relatively large defects. Due to its low hardness, silicon oxide has strong reactivity with sapphire, so the polishing efficiency is relatively low. Generally, the polishing rate of silicon oxide for C-oriented sapphire can only maintain At a rate of 5 microns / hour; alumina has high hardness, and the polishing rate can reach 12 microns / hour, but it is difficult to disperse into a stable, high-concentration c...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 汪海波杨金樊敏王菲菲鲁世斌张忠祥蒋先伟
Owner HEFEI NORMAL UNIV
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