48results about How to "Suppression of surface defects" patented technology

The invention discloses a silicon wafer polishing composition in the field of chemical mechanical polishing (CMP). The polishing composition comprises silica, a polishing interface control agent, a surfactant, a chelating agent, an alkaline compound and water, wherein the particle diameter of the silica in the polishing composition is between 1 and 200 nm; the content of the silica is between 0.05 and 50 weight percent; the polishing interface control agent is polyhydroxy cellulose ether; the content of the polishing interface control agent is between 0.001 and 10 weight percent; the content of the surfactant is between 0.001 and 1 weight percent; the content of the chelating agent is between 0.001 and 1 weight percent; the content of the alkaline compound is between 0.001 and 10 weight percent; the balance being water; and the PH value is between 8.5 and 12. The polishing interface control agent can control a polishing interface between abrasive particles and a polishing object in the chemical mechanical polishing process in order that the surface of the polished silicon wafer is more perfect. The polishing composition is in particular suitable for polishing the silicon wafer and has the advantages of rapid polishing speed, little surface defect and high planeness; and the polished silicon wafer has few metal ion contaminants and is easy to clean.

A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021 / g.

The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.

The invention relates to a chemical mechanical polishing composite of stainless steel surface polishing; the polishing composite is composed of grinding material, oxidizer, polishing accelerant, metalchelator, penetrant, and surfactant; the invention is characterized in that: aluminum oxide sol, namely hydrated alumina dispersed in acidic aqueous solution in sol state, is added, the hydrated alumina can be boehmite, fake boehmite, diaspore or gibbsite.

An aluminum alloy plate is provided which is suitable for use as members for apparatuses relating to semiconductors. The alloy plate is satisfactory in plate thickness precision and flatness and can be inhibited from having surface defects. Also provided is a process for producing the plate. An aluminum alloy comprising given components is melted (melting step), and hydrogen gas and inclusions are removed therefrom (dehydrogenation step and filtration step). This melt is cast into an ingot (casting step). According to need, the ingot is homogenized by a heat treatment (soaking step). This ingot is hot-rolled to a given thickness (hot-rolling step), cut (cutting step), and finished by smoothening the surfaces (smoothening step). According to need, the plate may be subjected to straightening (straightening step) and a heat treatment, e.g., annealing (annealing step). The aluminum alloy plate obtained has a surface flatness of 0.2 mm or less per m of rolling-direction length and has fluctuations in plate thickness within +-0.5% of a desired plate thickness.

A chemical mechanical polishing aqueous dispersion includes: (A) an amino acid, (B) abrasive grains, (C) a surfactant, (D) an oxidizing agent, and (E) ammonia, the ratio (WA / WD) of the content (WA) of the amino acid to the content (WD) of the oxidizing agent being 1.5 to 6.0, and the ratio (WE / WD) of the content (WE) of the ammonia to the content (WD) of the oxidizing agent being 0.05 to 0.6.

The present invention provides: a high-strength high-ductility hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet excellent in ductility, which improves non-plating defects and plating adhesion after severe deformation, and a method of producing the same; a high-strength and high-ductility hot-dip galvanized steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having superior appearance and workability, which suppresses the generation of non-plating defects, and a method of producing the same; and a high-strength hot-dip galvannealed steel sheet and a high-strength hot-dip galvanized steel sheet, which suppress non-plating defects and surface defects and have both corrosion resistance, in particular corrosion resistance in an environment containing chlorine ion, and high ductility, and a method of producing the same.

The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.

Systems and methods for suppressing magnetically active surface defects in superconducting quantum circuits are provided. A method includes providing one or more superconducting quantum circuits, and arranging the one or more superconducting quantum circuits in a hermetic enclosure capable of isolating the one or more superconducting circuits from ambient surroundings. The method also includes controlling an environment in the hermetic enclosure to suppress magnetically active surface defects associated with the one or more superconducting quantum circuits. In some aspects, the method further includes introducing an inert gas into the hermetic enclosure to passivate a surface of the one or more superconducting quantum circuits. In other aspects, the method further includes coating a surface of the one or more superconducting circuits with a non-magnetic encapsulation layer. In yet other aspects, the method further includes irradiating the one or more superconducting circuits using ultraviolet light.

A high-strength cold-rolled steel sheet providing a product with a good surface condition after press forming, having excellent bake hardenability and anti room temperature aging property, and having a dual phase structure with a tensile strength of at least 340 MPa is provided.A high-strength cold-rolled steel sheet has a structure comprising a main phase which is a ferrite and a secondary phase which is a low temperature transformation product including a martensite and has a hardness distribution of the ferrite phase in an arbitrary cross section having a length of 10 mm in the widthwise direction of the sheet which satisfies the relationship prescribed by (Hv(max)−Hv(ave))<0.5×(Hv(ave). Hv(max) is the maximum Vickers hardness of ferrite grains in a region at a distance of from (⅛)t to (¼)t in the thickness direction from the surface when the thickness of the high-strength cold-rolled steel sheet is t, and Hv(ave) is the average Vickers hardness of ferrite grains in this region.

The present invention provides: a high-strength high-ductility hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet excellent in ductility, which improves non-plating defects and plating adhesion after severe deformation, and a method of producing the same; a high-strength and high-ductility hot-dip galvanized steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having superiorappearance and workability, which suppresses the generation of non-plating defects, and a method of producing the same; and a high-strength hot-dip galvannealed steel sheet and a high-strength hot-dip galvanized steel sheet, which suppress non-plating defects and surface defects and have both corrosion resistance, in particular corrosion resistance in an environment containing chlorine ion, and high ductility, and a method of producing the same.

In the present invention, a polishing composition contains abrasive particles, a surface adsorption agent, and water and is used to polish a polishing target comprising crystalline metallic compounds. Compared to the case where the surface adsorption agent is removed from the polishing composition, the polishing composition reduces the surface defects of the polishing target after polishing.

The n+-GaAs layer 8 of the GaAs single crystal 10 is formed by epitaxial growth, followed by epitaxially growing the Si-layer 11 in the same epitaxial growth furnace, and then the aluminum electrode 12 is formed on the Si-layer 11 as an ohmic electrode. The Si-layer 11 can suppress the formation of a surface defect level on the surface of the n+-GaAs layer 8 and can effectively prevent the formation of an unnecessary potential barrier. Since the Si-layer 11 has a smooth surface and is excellent in chemical stability, a good ohmic electrode can be obtained by forming the electrode 12 using aluminum or the like has a suitable work function to the Si-layer 11.

[Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90 / D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

The present invention provides: a high-strength high-ductility hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet excellent in ductility, which improves non-plating defects and plating adhesion after severe deformation, and a method of producing the same; a high-strength and high-ductility hot-dip galvanized steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having superior appearance and workability, which suppresses the generation of non-plating defects, and a method of producing the same; and a high-strength hot-dip galvannealed steel sheet and a high-strength hot-dip galvanized steel sheet, which suppress non-plating defects and surface defects and have both corrosion resistance, in particular corrosion resistance in an environment containing chlorine ion, and high ductility, and a method of producing the same.

The present invention provides: a high-strength high-ductility hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet excellent in ductility, which improves non-plating defects and plating adhesion after severe deformation, and a method of producing the same; a high-strength and high-ductility hot-dip galvanized steel sheet having high fatigue resistance and corrosion resistance; a high-strength hot-dip galvanized steel sheet and hot-dip galvannealed steel sheet having superior appearance and workability, which suppresses the generation of non-plating defects, and a method of producing the same; and a high-strength hot-dip galvannealed steel sheet and a high-strength hot-dip galvanized steel sheet, which suppress non-plating defects and surface defects and have both corrosion resistance, in particular corrosion resistance in an environment containing chlorine ion, and high ductility, and a method of producing the same.

An object of the present invention is to provide a black ink composition by which a recorded matter in which a fine surface defect on a recorded matter is effectively suppressed, can be obtained. For this object, the present invention is a black ink composition containing water, carbon black, and a water-soluble polyurethane resin, wherein when a content of carbon black is not less than 0.4% by weight and less than 1.5% by weight, a content of a solid matter of the water-soluble polyurethane resin is not less than 0.67-fold and not more than 2.5-fold a content of the carbon black and, when a content of the carbon black is less than 0.4% by weight, a content of a solid matter of the water-soluble polyurethane resin is not less than 7.5-fold a content of the carbon black.

[Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90 / D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

The invention provides ZnSe quantum dot-doped glass and a preparation method thereof. The ZnSe quantum dot-doped glass comprises the following components according to the molar percentage: 35-50 percent of SiO2, 0-15 percent of B2O3, 5-20 percent of Na2O, 0-10 percent of Li2O, 6-25 percent of ZnO and 4-9 percent of ZnSe. The preparation method of the ZnSe quantum dot-doped glass comprises the following steps: weighing a certain amount of raw materials according to the above molar percentage, fully and uniformly mixing, melting for 30-60 minutes at a temperature of 1300-1450 DEG C and then forming. The ZnSe quantum dot-doped glass and the preparation method thereof provided by the invention have the beneficial effects that a ZnSe quantum dot is successfully prepared in borosilicate for thefirst time, and the intrinsic luminescence wavelength of the ZnSe quantum dot is continuously adjustable within the range of 400-450 nm; the ZnSe quantum dot-doped glass prepared by the invention hasgood chemical stability and higher intrinsic luminescence and is a very promising luminescent material.

Systems and methods for suppressing magnetically active surface defects in superconducting quantum circuits are provided. A method includes providing one or more superconducting quantum circuits, and arranging the one or more superconducting quantum circuits in a hermetic enclosure capable of isolating the one or more superconducting circuits from ambient surroundings. The method also includes controlling an environment in the hermetic enclosure to suppress magnetically active surface defects associated with the one or more superconducting quantum circuits. In some aspects, the method further includes introducing an inert gas into the hermetic enclosure to passivate a surface of the one or more superconducting quantum circuits. In other aspects, the method further includes coating a surface of the one or more superconducting circuits with a non-magnetic encapsulation layer. In yet other aspects, the method further includes irradiating the one or more superconducting circuits using ultraviolet light.

A cerium-based abrasive that achieves a high polishing rate and suppresses the occurrence of surface defects such as scratches and pits and the deposition of the abrasive particles on the polished surface in surface polishing of glass substrates or the like, at low cost with a high production efficiency. The cerium-based abrasive includes a cubic composite rare earth oxide and a composite rare earth oxyfluoride, containing 95.0 to 99.5 mass % of total rare earth elements in terms of oxides, containing 54.5 to 95.0 mass % of cerium in terms of oxide, 4.5 to 45.0 mass % of lanthanum in terms of oxide, and 0.5 to 2.0 mass % of neodymium in terms of oxide relative to the total rare earth elements in terms of oxides, containing 0.5 to 4.0 mass % of fluorine atoms, and containing 0.001 to 0.50 mass % of sodium atoms relative to the total rare earth elements in terms of oxides.

A chemical mechanical polishing aqueous dispersion includes: (A) an amino acid, (B) abrasive grains, (C) a surfactant, (D) an oxidizing agent, and (E) ammonia, the ratio (WA / WD) of the content (WA) of the amino acid to the content (WD) of the oxidizing agent being 1.5 to 6.0, and the ratio (WE / WD) of the content (WE) of the ammonia to the content (WD) of the oxidizing agent being 0.05 to 0.6.

The present invention is a polishing agent for synthetic quartz glass substrates, which contains polishing particles and water, and which is characterized in that: the polishing particles are composite oxide particles of cerium and yttrium; and the cerium content in the polishing particles is from 71 mol% to 79 mol% (inclusive). Consequently, the present invention is able to provide a polishing agent for synthetic quartz glass substrates, which is capable of sufficiently reducing the occurrence of defects in the surface of a synthetic quartz glass substrate due to polishing without lowering the polishing rate.

The present invention is a polishing material for synthetic quarts glass substrates which comprises abrasive grains and water, characterized in that the abrasive grains comprise ceria particles as base particles and, fixed to the surfaces of the base particles, particles of a composite oxide including cerium and at least one rare-earth element selected from among trivalent rare-earth elements excluding cerium. Due to this, a polishing material for synthetic quarts glass substrates which has a high polishing rate and can be sufficiently inhibited from causing polishing defects is provided.

The present invention provides a synthetic quartz glass substrate polishing agent comprising polishing particles and water, and is characterized in that the polishing particles comprise silica particles as base particles, on the surface of which are supported particles of a composite oxide of cerium and at least one rare-earth element selected from among trivalent rare-earth elements excluding cerium. The synthetic quartz glass substrate polishing agent has a high polishing rate and is capable of reducing the occurrence of polishing defects to a sufficient degree.

Provided is a wire rod having high strength and high toughness, which suppresses the generation of surface oxide and has superior surface properties through uniform oxide formation, and to a method for manufacturing same. For this purpose, a wire rod comprising 0.005˜ to 0.02 wt. % of Sb, having superior surface properties, high strength and high toughness, and a method for manufacturing same are provided.

A steel sheet includes a predetermined chemical composition, and includes a steel microstructure represented by, in an area ratio, ferrite: 5% to 80%, a hard microstructure constituted of bainite, martensite or retained austenite or an arbitrary combination of the above: 20% to 95%, and a standard deviation of a line fraction of the hard microstructure on a line in a plane perpendicular to a thickness direction: 0.050 or less in a depth range where a depth from a surface when a thickness of a steel sheet is set as t is from 3t / 8 to t / 2.