37results about How to "Reduce polishing rate" patented technology

A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a 29Si-NMR spectrum being 2.0 to 3.0×1021 / g.

A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

Disclosed are aluminum oxide particles wherein primary particles have a hexahedral shape and an aspect ratio of 1-5. The average primary particle diameter of the aluminum oxide particles is preferably 0.01-0.6 [mu]m. The a-particle ratio in the aluminum oxide particles is preferably 5-70%. The average secondary particle diameter of the aluminum oxide particles is preferably 0.01-2 [mu]m, and the value obtained by dividing the 90% particle diameter of the aluminum oxide particles by the 10% particle diameter is preferably 3 or less. The aluminum oxide particles are used as abrasive grains for polishing semiconductor device substrates, hard disk substrates or display substrates.

The present invention discloses a chemical machinery polishing solution used in copper plating, which contains seat grinding granule, organanic phosphonic acid compounds, azole nitrogen compounds, oxidizer and carrier. The polishing solution provided in the invention can guaranty polishing rate of speed with little seat grinding granule dosage, and deduce defect, cullet cut, sticky dirt and otherresidue obviously at the same time, hence reduce infectant on substrate surface; appropriate copper / tantalum remove rate selection ratio is provided to satisfy copper plating polishing requirement; can prevent local and whole corrosion that generated in metal polishing process and improve product yield rate.

The invention reveals an electrolytic polishing fluid containing alcohol-based additives and its smoothened metal layer method. The said electrolytic polishing fluid contains an alcohol-based additives and acid solution. Optimization, the said alcohol-based additives can be glycerol, methanol or ethanol, the said acid solution contains phosphoric acid and organic acid additives, the organic acid additives can be acetic acid or citric acid. The invention degrades the burnishing rate of the said metal layer surface through the said alcohol-based additives forming the diffusion restraint layer on the said metal layer surface, but the rabbet and prominence of the said metal layer show the same degree of polishing inhibition in some certain concentration. Adding organic acid additive in the electrolytic polishing liquid leads to the difference of organic acid concentration of the convex and concave metal layer thereby causes greater difference of polishing rate of the convex and concave.

A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate.

The invention discloses new chemically mechanical polishing slurry for polishing metals. The polishing slurry is prepared by combining the following substances: abrasive particles, complexing agents and corrosion inhibitors. The slurry has the following positive effects: the removal rate of metals can be reduced, the metal materials can be prevented from whole and local corrosion, the defects can be obviously decreased and the surface quality can be improved.

The invention relates to a polishing solution and a polishing method of silicon carbide crystals. The polishing solution comprises the following components in percentage by weight: 6-10% of nanoscalepolycrystalline diamond, 75-87% of alkaline silica sol, 1-2% of a silane coupling agent, 1-3% of an anti-crystallization agent, 1-2% of an oxidant, and the balance of amphiphilic organic matter. The polishing solution of the invention has the advantages of good wet spreading performance, high soft layer removal rate, being not prone to crystallization, and the like, and therefore polishing for silicon carbide solves the problems of low polishing rate and poor polishing effect. In addition, as the polishing solution is used in combination with a coarse grinding fluid and a fine grinding fluid,a high-speed, high-flatness, high-gloss, low-roughness polishing effect can be achieved.

A method of polishing a peripheral portion of a substrate is provided. This method includes: causing sliding contact between the peripheral portion of the substrate and a polishing tape; and supplying a polishing liquid onto the polishing tape contacting the peripheral portion of the substrate. The polishing tape includes a base tape and a fixed abrasive formed on the base tape, and the polishing liquid is an alkaline polishing liquid containing an alkaline chemical and an additive including molecules that cause steric hindrance.

The invention discloses a preparation method for silica-based gallium arsenide material with high quality and low surface roughness. The preparation method comprises the following steps: step 1, a germanium layer is grown on a silicon substrate; step 2, the silicon substrate on which the germanium layer is grown is placed in an MOCVD (metal-organic chemical vapor deposition) reaction chamber to be subjected to annealing for the first time; step 3, a low-temperature gallium arsenide nucleating layer and a high-temperature gallium arsenide layer are grown on the germanium layer in sequence to form a sample; step 4, the sample is polished and rinsed; step 5, the sample is put in the MOCVD reaction chamber to be subjected to annealing for the second time; and step 6, a gallium arsenide cover layer is grown on the surface of the sample, and the preparation of the silica-based gallium arsenide material is finished. The preparation method for the silica-based gallium arsenide material with high quality and low surface roughness can solve the transition problem of the silicon substrate to III-V material and establishes the basis of substrate for silica-based gallium arsenide photoelectric and microelectronic devices.

The invention discloses a chemically mechanical polishing solution used for shallow-trench isolation. The polishing solution at least contains one silicon-based abrasive material, one water-soluble anionic surfactant and one pH regulator, and has higher silica removal rate and lower silicon nitride removal rate, a polished surface is smooth and clean, and the chemically mechanical polishing solution has good stability and is suitable for the chemical-mechanical planarization for the shallow-trench isolation.

A polishing device includes a polishing pad for polishing a wafer and a polishing head for holding the wafer. The polishing head has a retainer ring for retaining the wafer in the in-plane direction of the wafer, a membrane sheet for pressing the wafer against the polishing pad, and a head body for supporting the retainer ring and the membrane sheet. The retainer ring has a subordinate retainer member having a ring portion and a plurality of fins extending from the ring portion to retain the peripheral surface of the wafer. The subordinate retainer member has a thickness equal to the thickness of the wafer. The membrane sheet has a diameter larger than the wafer, and presses the wafer and the vicinity of the inner edge of the subordinate retainer member.

A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.

The invention provides a chemo-mechanical polishing solution which comprises silicon dioxide grinding particles, a corrosion inhibitor, a complexing agent, an oxidant, at least one polyacrylic acid anionic surfactant and a metal surface defect improver. The polishing solution has the advantages that 1) the polishing solution is high in polishing rate to copper and low in polishing rate to tantalum, so that the polishing solution has a relatively high copper / tantalum polishing rate selection ratio; 2) the polishing solution can improve disc sinking and medium layer erosion of a polished copperwire; and 3) the polishing solution can improve the surface roughness of the polished copper, so that defects are reduced.

This invention provides a polishing pad, which includes a substrate and a plurality of discrete abrasive blocks fixed on the substrate, wherein the abrasive blocks are of at least two kinds of heights. This invention would not reduce the polishing rate dramatically during the process for polishing a wafer by using the polishing pad in the long run. Therefore a thickness of the wafer to be polished is able to be controlled accurately, thereby improving the effect and yield of polishing the wafer. The present invention further provides a method for manufacturing the polishing pad. The polishing pad according to this invention is manufactured conveniently by using this method. Correspondingly, a method for using the polishing pad is also provided in this invention.

The invention provides a polishing pad, polishing equipment and a polishing method of a silicon wafer. The polishing pad comprises a polishing surface in contact with the silicon wafer, the polishingsurface is provided with at least one groove, the grooving positions of the grooves enable the edge of the silicon wafer to be at least partially suspended above the grooves when the silicon wafer ispolished. According to the polishing pad, the polishing equipment and the polishing method of the silicon wafer, only the polishing rate of the edge position of the silicon wafer is reduced under thecondition that the polishing rate of the whole wafer is kept basically unchanged, so that the flatness of the edge thickness of the silicon wafer is improved, and the product yield is increased.

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide, polyquaternium salt, carboxylic acid containing a benzene ring and polyvinylamine. Only when the polyquaternium salt, the carboxylic acid containing the benzene ring and the polyvinylamine are used together, the real automatic stopping function can be achieved, a blank wafer has the low polishing rate, the high polishing rate is kept when the step height of the patterned silicon wafer is high, the lower the step height is, the better the polishing speed is restrained, and the better the polishing effect is achieved. Therefore, the automatic stop function is realized.

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide grinding particles and hydroxylamine. 4-hydroxybenzoic acid or salicylhydroxamic acid can be further added into the chemical mechanical polishing solution, so that the removal rate of the patterned silicon dioxide sheet can be increased.

The present invention provides a method for chemical mechanical polishing of a metallic damascene structure comprising: an insulating layer having grooves on a wafer; and a metal layer having a lower portion and a metal layer positioned within the grooves of the insulating layer Covering the lower part and the upper part of the insulating layer. The method includes: a first step of planarizing the upper portion of the metal layer; and a second step of polishing the insulating layer and the lower portion of the metal layer. In a first step, the wafer and the polishing pad are loaded together in contact mode by applying a pressure p between the wafer and the polishing pad and creating a relative velocity v to increase the metal removal rate. In a second step, in a steady state mode, the lower portions of the insulating and metal layers are polished to form individual metal lines in the grooves with minimal dishing of the metal lines and overpolishing of the insulating layer.

The invention discloses a preparation method for silica-based gallium arsenide material with high quality and low surface roughness. The preparation method comprises the following steps: step 1, a germanium layer is grown on a silicon substrate; step 2, the silicon substrate on which the germanium layer is grown is placed in an MOCVD (metal-organic chemical vapor deposition) reaction chamber to be subjected to annealing for the first time; step 3, a low-temperature gallium arsenide nucleating layer and a high-temperature gallium arsenide layer are grown on the germanium layer in sequence to form a sample; step 4, the sample is polished and rinsed; step 5, the sample is put in the MOCVD reaction chamber to be subjected to annealing for the second time; and step 6, a gallium arsenide cover layer is grown on the surface of the sample, and the preparation of the silica-based gallium arsenide material is finished. The preparation method for the silica-based gallium arsenide material with high quality and low surface roughness can solve the transition problem of the silicon substrate to III-V material and establishes the basis of substrate for silica-based gallium arsenide photoelectric and microelectronic devices.

The invention discloses a NOR flash memory device and a preparation method thereof, wherein the NOR flash memory device comprises a sequentially stacked substrate, a tunnel oxide layer, a floating gate layer, a dielectric layer and a control gate layer; at least one through the control gate layer and the floating gate via hole of the dielectric layer, the floating gate via hole is located in the active area, and is used to expose the floating gate layer to lead out the floating gate electrode; at least one active area blocking structure, the active area blocking structure is arranged on the substrate Between the dielectric layer and the chemical mechanical polishing process on the floating gate layer, it is used to reduce the wear of the floating gate layer exposed by the floating gate via hole. The technical scheme of the present invention can effectively reduce the polishing rate of the floating gate layer around it by the chemical mechanical polishing process by adding a barrier structure in the active region, increase the thickness of the floating gate layer around it, and avoid damage caused by the floating gate layer being too thin. This leads to leakage or breakdown of the NOR flash memory device, which improves the reliability of the NOR flash memory device.

The invention relates to the field ship antifouling coatings, in particular to a nanometer polysiloxane nontoxic low-surface-energy ship antifouling coating for sea ships and a preparation method thereof, which are used for solving the problem of long-term nontoxicity, antifouling and corrosion on the outer bottom surface of a ship. The nanometer polysiloxane nontoxic low-surface-energy ship antifouling coating comprises the following components in parts by weight: 50-55 parts of polysiloxane resin, 1-5 parts of nanometer slurry, 5-8 parts of dimethylbenzene, 6-10 parts of butyl ester; 2.0-3.0 parts of ethylene glycol diethyl ether acetic ester, 0.3-0.5 part of a dispersing agent, 0.3-0.5 part of an antifoaming agent, 0.1-0.3 part of a flatting agent, 0.5-0.8 part of an anti-settling agent, 0.4-0.7 part of gas phase white carbon black, 15-22 parts of a pigment and 3-6 parts of a filler. The preparation method comprises the following steps of: proportionally preparing, dispersing, and grinding till the fineness is below 30 micros to obtain a component A; and mixing the component A and the component B for curing to obtain the nontoxic long-term ship sea antifouling coating. The nanometer polysiloxane nontoxic low-surface-energy ship antifouling coating is a surface protection material with extreme low surface energy, and plays roles in preventing fouling and scaling, and marine organisms are prevented from being adhered to the antifouling coating easily.

The invention discloses an NOR flash memory device and a preparation method thereof. The NOR flash memory device comprises a substrate, a tunneling oxide layer, a floating gate layer, a dielectric layer and a control gate layer, which are stacked up in sequence; at least one floating gate via hole running through the control gate layer and the dielectric layer, wherein the floating gate via hole is arranged in an active region and is used for exposing the floating gate layer to lead out a floating gate electrode; and at least one active region blocking structure, which is arranged between thesubstrate and the dielectric layer and is used for reducing wear of the floating gate layer exposed by the floating gate via hole in the chemical mechanical polishing process of the floating gate layer. According to the technical scheme, by adding the active region blocking structure, polishing rate of the chemical mechanical polishing process for the floating gate layer around can be effectivelyreduced, the thickness of the floating gate layer around is increased, the phenomenon leakage or breakdown of the NOR flash memory device due to too thin floating gate layer can be prevented, and reliability of the NOR flash memory device is improved.

The invention provides a chemical mechanical polishing liquid for regenerated wafers and a preparation method thereof. The mass percentage composition comprises 5% to 50% of abrasive particles, 0.1% to 10% of a rate accelerator, and 0.5% to 5% of a complexing agent. , 0.1% to 2% of pH regulator, 0.001% to 1% of nonionic surfactant and 0.001% to 1% of betaine type zwitterionic surfactant, and the balance is water. The polishing liquid can effectively repair the surface damage of the regenerated wafer, remove the residual film on the surface, and maintain a high removal rate of the silicon wafer. The surface quality of the regenerated wafer after polishing is excellent, and the number of cycles is increased.

The present invention provides alumina particles including primary particles each having a hexahedral shape and an aspect ratio of 1 to 5. The alumina particles preferably have an average primary particle diameter of 0.01 to 0.6 μm. The alumina particles preferably have an α-conversion of 5% to 70%. In addition, the alumina particles preferably have an average secondary particle diameter of 0.01 to 2 μm, and the value obtained by dividing the 90% particle diameter of the alumina particles by the 10% particle diameter of the alumina particles is preferably 3 or less. The alumina particles are useful, for example, as abrasive grains in applications for polishing semiconductor device substrates, hard disk substrates, or display substrates.