36results about How to "Reduce polishing rate" patented technology

A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a ²⁹Si-NMR spectrum being 2.0 to 3.0×10²¹/g.

A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

The present invention discloses a chemical machinery polishing solution used in copper plating, which contains seat grinding granule, organanic phosphonic acid compounds, azole nitrogen compounds, oxidizer and carrier. The polishing solution provided in the invention can guaranty polishing rate of speed with little seat grinding granule dosage, and deduce defect, cullet cut, sticky dirt and otherresidue obviously at the same time, hence reduce infectant on substrate surface; appropriate copper /tantalum remove rate selection ratio is provided to satisfy copper plating polishing requirement; can prevent local and whole corrosion that generated in metal polishing process and improve product yield rate.

The invention reveals an electrolytic polishing fluid containing alcohol-based additives and its smoothened metal layer method. The said electrolytic polishing fluid contains an alcohol-based additives and acid solution. Optimization, the said alcohol-based additives can be glycerol, methanol or ethanol, the said acid solution contains phosphoric acid and organic acid additives, the organic acid additives can be acetic acid or citric acid. The invention degrades the burnishing rate of the said metal layer surface through the said alcohol-based additives forming the diffusion restraint layer on the said metal layer surface, but the rabbet and prominence of the said metal layer show the same degree of polishing inhibition in some certain concentration. Adding organic acid additive in the electrolytic polishing liquid leads to the difference of organic acid concentration of the convex and concave metal layer thereby causes greater difference of polishing rate of the convex and concave.

A method using an associated composition for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) is described. This method affords low dishing and local erosion levels on the metal during CMP processing of the metal-containing substrate.

The invention relates to a polishing solution and a polishing method of silicon carbide crystals. The polishing solution comprises the following components in percentage by weight: 6-10% of nanoscalepolycrystalline diamond, 75-87% of alkaline silica sol, 1-2% of a silane coupling agent, 1-3% of an anti-crystallization agent, 1-2% of an oxidant, and the balance of amphiphilic organic matter. The polishing solution of the invention has the advantages of good wet spreading performance, high soft layer removal rate, being not prone to crystallization, and the like, and therefore polishing for silicon carbide solves the problems of low polishing rate and poor polishing effect. In addition, as the polishing solution is used in combination with a coarse grinding fluid and a fine grinding fluid,a high-speed, high-flatness, high-gloss, low-roughness polishing effect can be achieved.

A method of polishing a peripheral portion of a substrate is provided. This method includes: causing sliding contact between the peripheral portion of the substrate and a polishing tape; and supplying a polishing liquid onto the polishing tape contacting the peripheral portion of the substrate. The polishing tape includes a base tape and a fixed abrasive formed on the base tape, and the polishing liquid is an alkaline polishing liquid containing an alkaline chemical and an additive including molecules that cause steric hindrance.

The invention discloses a preparation method for silica-based gallium arsenide material with high quality and low surface roughness. The preparation method comprises the following steps: step 1, a germanium layer is grown on a silicon substrate; step 2, the silicon substrate on which the germanium layer is grown is placed in an MOCVD (metal-organic chemical vapor deposition) reaction chamber to be subjected to annealing for the first time; step 3, a low-temperature gallium arsenide nucleating layer and a high-temperature gallium arsenide layer are grown on the germanium layer in sequence to form a sample; step 4, the sample is polished and rinsed; step 5, the sample is put in the MOCVD reaction chamber to be subjected to annealing for the second time; and step 6, a gallium arsenide cover layer is grown on the surface of the sample, and the preparation of the silica-based gallium arsenide material is finished. The preparation method for the silica-based gallium arsenide material with high quality and low surface roughness can solve the transition problem of the silicon substrate to III-V material and establishes the basis of substrate for silica-based gallium arsenide photoelectric and microelectronic devices.

The invention discloses a chemically mechanical polishing solution used for shallow-trench isolation. The polishing solution at least contains one silicon-based abrasive material, one water-soluble anionic surfactant and one pH regulator, and has higher silica removal rate and lower silicon nitride removal rate, a polished surface is smooth and clean, and the chemically mechanical polishing solution has good stability and is suitable for the chemical-mechanical planarization for the shallow-trench isolation.

A polishing device includes a polishing pad for polishing a wafer and a polishing head for holding the wafer. The polishing head has a retainer ring for retaining the wafer in the in-plane direction of the wafer, a membrane sheet for pressing the wafer against the polishing pad, and a head body for supporting the retainer ring and the membrane sheet. The retainer ring has a subordinate retainer member having a ring portion and a plurality of fins extending from the ring portion to retain the peripheral surface of the wafer. The subordinate retainer member has a thickness equal to the thickness of the wafer. The membrane sheet has a diameter larger than the wafer, and presses the wafer and the vicinity of the inner edge of the subordinate retainer member.

A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.

This invention provides a polishing pad, which includes a substrate and a plurality of discrete abrasive blocks fixed on the substrate, wherein the abrasive blocks are of at least two kinds of heights. This invention would not reduce the polishing rate dramatically during the process for polishing a wafer by using the polishing pad in the long run. Therefore a thickness of the wafer to be polished is able to be controlled accurately, thereby improving the effect and yield of polishing the wafer. The present invention further provides a method for manufacturing the polishing pad. The polishing pad according to this invention is manufactured conveniently by using this method. Correspondingly, a method for using the polishing pad is also provided in this invention.

The invention relates to the technical field of resin manufacturing, in particular to silicone modified acrylic resin and application. The silicone modified acrylic resin is prepared by taking a vinylpolymerization monomer as a main body and carrying out graft copolymerization on a silicon-containing monomer in the presence of a hydrophilic monomer, wherein the number-average molecular weight ofthe silicone modified acrylic resin is 10000-30000, and the glass transition temperature of the silicone modified acrylic resin is 30-45 DEG C. The silicon-containing monomer is subjected to graft copolymerization in the presence of the hydrophilic monomer by taking the vinyl polymerization monomer as a main body, and the prepared resin can be stably hydrolyzed and provides long-acting self-polishing property, so that a good and long-term antifouling agent release property is obtained.

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide grinding particles and hydroxylamine. 4-hydroxybenzoic acid or salicylhydroxamic acid can be further added into the chemical mechanical polishing solution, so that the removal rate of the patterned silicon dioxide sheet can be increased.

The present invention provides a method for chemical mechanical polishing of a metallic damascene structure comprising: an insulating layer having grooves on a wafer; and a metal layer having a lower portion and a metal layer positioned within the grooves of the insulating layer Covering the lower part and the upper part of the insulating layer. The method includes: a first step of planarizing the upper portion of the metal layer; and a second step of polishing the insulating layer and the lower portion of the metal layer. In a first step, the wafer and the polishing pad are loaded together in contact mode by applying a pressure p between the wafer and the polishing pad and creating a relative velocity v to increase the metal removal rate. In a second step, in a steady state mode, the lower portions of the insulating and metal layers are polished to form individual metal lines in the grooves with minimal dishing of the metal lines and overpolishing of the insulating layer.