Chemo-mechanical polishing solution

Abstract

The invention provides a chemo-mechanical polishing solution which comprises silicon dioxide grinding particles, a corrosion inhibitor, a complexing agent, an oxidant, at least one polyacrylic acid anionic surfactant and a metal surface defect improver. The polishing solution has the advantages that 1) the polishing solution is high in polishing rate to copper and low in polishing rate to tantalum, so that the polishing solution has a relatively high copper / tantalum polishing rate selection ratio; 2) the polishing solution can improve disc sinking and medium layer erosion of a polished copperwire; and 3) the polishing solution can improve the surface roughness of the polished copper, so that defects are reduced.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid. Background technique [0002] With the development of semiconductor technology and the miniaturization of electronic components, copper, as a material with good conductivity, is widely used in electronic component circuits. Due to the small resistance of copper, the transmission speed of signals between transistors in the circuit can be accelerated, and it can also provide smaller parasitic capacitance capability and smaller electromigration sensitivity. These electrical advantages make copper have good development prospects in the development of semiconductor technology. [0003] However, it is found in the copper integrated circuit manufacturing process that copper will migrate or diffuse into the transistor area of ​​the integrated circuit, thereby adversely affecting the performance of the semiconductor transistor, so the c...

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Problems solved by technology

However, the existing polishing liquid will produce dish-shaped depressions of copper wires and dielectric layer erosion after polishing, as well as defects such as copper residue and corrosion.

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