Method for processing monocrystal silicon carbide wafer

A wafer and machining allowance technology, which is used in metal processing equipment, stone processing equipment, fine working devices, etc., and can solve problems such as the inability to take into account the quality of the crystal surface.

Inactive Publication Date: 2011-06-29
BEIJING TIANKE HEDA SEMICON CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The reason is that these methods only pay attention to one aspect of surface treatment in the later stage of crystal processing, while ignoring or failing to take into account other aspects. For example, while removing the damaged layer, it is inevitable to introduce new damage; while controlling the crystal thickness, Can not take into account the surface quality of the crystal, etc.

Method used

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  • Method for processing monocrystal silicon carbide wafer
  • Method for processing monocrystal silicon carbide wafer
  • Method for processing monocrystal silicon carbide wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Step 1: Take the 2-inch nitrogen-doped 4H-SiC single crystal wafer cut by wire cutting, and use SL-2 type cleaning agent to ultrasonically clean it for 10 minutes in 50Hz ultrasonic wave, and then ultrasonically clean it with absolute ethanol in 50Hz ultrasonic wave 10 minutes, set aside.

[0043] Step 2: Take the cleaned wafer, put it into the double-sided grinding machine, and adjust the pressure. The grinding pressure is 1 kg per piece with light pressure, 2 kg per piece with medium pressure, and 3 kg per piece with heavy pressure, and adjust each section. The number of grinding revolutions corresponding to the pressure is adjusted to 20 revolutions per minute of the grinding disc, and the flow rate of the grinding is adjusted to 30 milliliters per minute, and the grinding liquid is started to be processed. After the processing is completed, the removal amount is 15 microns, and the wafer is removed and cleaned in an ultrasonic wave with alcohol for 10 minutes, and t...

Embodiment 2

[0050] Step 1: Take the 2-inch nitrogen-doped 6H-SiC single crystal wafer cut by wire cutting, and use SL-2 type cleaning agent to ultrasonically clean it for 10 minutes in 50Hz ultrasonic wave, and then ultrasonically clean it with absolute ethanol in 50Hz ultrasonic wave 10 minutes, set aside.

[0051] Step 2: Take the cleaned wafer, put it into the double-sided grinding machine, and adjust the pressure. The grinding pressure is 1 kg per piece with light pressure, 2 kg per piece with medium pressure, and 3 kg per piece with heavy pressure, and adjust each section. The number of grinding revolutions corresponding to the pressure is adjusted to 90 revolutions per minute of the grinding disc, and the flow rate of the grinding is adjusted to 100 milliliters per minute, and the grinding liquid is started to be processed. After the processing is completed, the removal amount is 140 microns, and the chip is removed and cleaned in an ultrasonic wave with alcohol for 10 minutes, and ...

Embodiment 3

[0058] Step 1: Take the 2-inch semi-insulating 6H-SiC single crystal wafer cut by wire cutting, and use SL-2 type cleaning agent to ultrasonically clean it for 10 minutes in 50Hz ultrasonic wave, and then ultrasonically clean it with absolute ethanol in 50Hz ultrasonic wave 10 minutes, set aside.

[0059] Step 2: Take the cleaned wafer, put it into the double-sided grinding machine, and adjust the pressure. The grinding pressure is 1 kg per piece with light pressure, 2 kg per piece with medium pressure, and 3 kg per piece with heavy pressure, and adjust each section. The number of grinding revolutions corresponding to the pressure is adjusted to 50 revolutions per minute of the grinding disc, and the grinding flow rate is adjusted to 60 milliliters per minute, and the grinding liquid is started to be processed. After the processing is completed, the removal amount is 45 microns, and the chip is removed and cleaned in an ultrasonic wave with alcohol for 10 minutes, and then use...

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Abstract

The invention provides a method for obtaining the high-quality surface of monocrystal silicon carbide through mechanical grinding and chemical polishing. By adopting the method, point defects, linear defects and planar defects of the monocrystal silicon carbide surface can be removed through double-side grinding, single-side swinging arm type rough grinding, single-side swinging arm type fine grinding and single-side swinging arm type CMP (chemically mechanical polishing), and surface blemishes and damaged layers of a wafer can be eliminated to the utmost extent, so that the high-quality surface of a monocrystal silicon carbide wafer can be obtained.

Description

technical field [0001] The invention relates to a method for treating the surface of a silicon carbide single crystal, in particular to a method for mechanical processing and chemical treatment of the surface of a silicon carbide single crystal wafer. Background technique [0002] As a wide bandgap semiconductor, single crystal silicon carbide has the characteristics of high thermal conductivity and high saturation electron drift rate. With the increasing needs of high-speed and high-frequency radio technology, wide-bandgap semiconductors have attracted more and more attention. This semiconductor device can meet many advantages that ordinary silicon-based semiconductors cannot meet, such as being able to operate at higher power levels and more Work under high temperature and more severe environment. In fact, metal-semiconductor field-effect transistors and metal-oxide-semiconductor field-effect transistors manufactured on this basis have been realized. Therefore, it is mor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00B24B37/04B24B37/10B28D5/00
Inventor 张贺胡伯清黄青松王锡明陈小龙彭同华
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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