134 results about "Chemo mechanical" patented technology

The invention relates to a deep trench isolation structure and a preparation method thereof, and aims to solve the problems that the height difference of an etching stop layer is too large and the processing precision of a deep trench is insufficient in the prior art. According to the method, the sacrificial layer is deposited on the surface of the substrate after the shallow groove is machined, the sacrificial layer is used for protecting a non-target area in the deep groove machining process, and high-precision machining of the deep groove is achieved through the multi-stage etching technology. In the first stage, sacrificial layer materials in a deep groove region are removed step by step, and a target region is exposed; and in the second stage, the mask effect of the sacrificial layer is utilized to accurately etch to the target depth, and meanwhile, the side wall form is optimized. By reducing the height difference of the etching stop layer, the uniformity of the filling material is improved, and the smoothness of chemical mechanical polishing is improved. The method has the functions of mask protection and depth regulation and control, simplifies the process steps, reduces the manufacturing cost, is suitable for manufacturing high-density integrated circuits and power devices, and has excellent processing effect and industrial applicability.

The invention provides a wafer polishing method, a polishing device and processing equipment, the wafer polishing method is used for removing a target layer comprising a first layer and a second layer with similar friction coefficients, a primary polishing process comprises a first polishing stage and a second polishing stage, and the method comprises the following steps: determining first time; determining the material removal amount and the material removal rate of the wafer in the second polishing stage; calculating second time; adjusting the first time according to the second time to obtain third time; and polishing the current wafer, executing a first polishing stage according to a third time, and executing a second polishing stage according to a second time, so that the second layer reaches the target thickness. According to the polishing method, the chemical mechanical polishing efficiency and polishing precision of the specific wafer can be improved.

The invention relates to a deep and shallow trench isolation structure and process, and the process comprises the steps: providing a substrate, and depositing a multifunctional layer on the surface of the substrate; forming a first pattern on a partial region of the multifunctional layer through a photoetching technology; etching for the first time by using the first pattern, removing a part of material of the multifunctional layer and etching the substrate to form a shallow trench structure, and removing the first pattern mask; forming a second pattern on the non-etched region through the photoetching technology again; performing second etching by using the second pattern, removing the multifunctional layer in an unetched region to the surface of the substrate, and removing the second pattern mask; and under the protection effect of the multifunctional layer, carrying out third etching on the exposed region, and processing the exposed region to a designed depth to form a shallow trench structure and a deep trench structure with different depths. According to the invention, the height difference of the etching stop layer after STI etching in different areas is eliminated, so that the subsequent oxide filling and chemical mechanical polishing processes are easy to control, and the quality of the device is improved.

The invention discloses a preparation method of a refractory metal reinforced copper-based composite material EBSD sample. The method comprises the following steps: 1, carrying out linear cutting to obtain a to-be-treated original sample; 2, performing thermal inlaying on the sample; 3, mechanical grinding; 4, vibration polishing; 5, chemically and mechanically polishing; and sixthly, cleaning and blow-drying are conducted, and the refractory metal reinforced copper-based composite EBSD sample is obtained. Scratches and defects of the sample are removed through vibration polishing, and synergistic regulation and control of the corrosion rate are achieved and tiny corrosion pit defects on the surface of the sample are eliminated by means of the oxidation effect, the complexing effect and the corrosion inhibition effect of the chemical mechanical polishing solution on the two phases of the heterogeneous refractory metal reinforced copper-based composite material. The sample surface is kept in a flat, smooth and low-stress state, the sample surface quality is remarkably improved, the analysis rate of the obtained EBSD sample is high, and the method has the advantages of being practical, efficient and low in cost.

The invention relates to a low-stress chemical mechanical etching process suitable for fragile materials, which belongs to the technical field of etching processing of fragile materials and comprises a precise chemical mechanical polishing machine, a polishing pad, a polishing solution conveying and managing system and end point detection equipment. The precise chemical mechanical polishing machine comprises a multi-zone pressure controllable polishing head, a high-precision rotating speed control system and a real-time thickness measuring system, a polishing pad is a polishing disc made of porous polyurethane materials, and the polishing liquid conveying and managing system comprises a multi-channel metering pump system and a stirring and temperature control unit. And the end point detection equipment comprises a surface profilometer, an atomic force microscope and a transmission electron microscope. According to the method, through fine cooperation of chemical reaction and mechanical grinding, microcrack initiation and propagation in the polishing process are effectively inhibited, surface and subsurface damage of the fragile material is remarkably reduced, the machined surface which is ultrahigh in smoothness and free of damage is obtained, and meanwhile the high material removal rate is kept.

The invention provides a polishing pad and a chemical mechanical polishing method, the polishing pad is in a disc shape and comprises a polishing surface and a plurality of grooves which are recessed inwards from the polishing surface of the polishing pad, and the plurality of grooves are arranged around the center of the disc-shaped polishing pad to divide a plurality of polishing areas. Each polishing area is provided with one or more through holes which are laterally through and used for fluid communication of the adjacent grooves, the distribution density of the grooves in the radial outward direction of the polishing pad has a decreasing tendency, and the number of the through holes has a decreasing tendency. According to the invention, the distribution uniformity of the polishing liquid on the polishing pad can be effectively improved, and the uniformity of a film-forming pattern in a chip is improved, so that the yield is improved.

The invention relates to a method for manufacturing a tiled donor substrate, the method comprising the following steps: a) providing an initial structure comprising a carrier substrate having a front face and a rear face, and a plurality of tiles made of a first monocrystalline material, wherein the tiles are arranged on the front face and are spaced apart from one another; b) forming a complementary layer by means of an additive manufacturing technique, wherein the complementary layer: - is arranged between the tiles, in contact with the front face of the carrier substrate; - is composed of a material, referred to as the second material, having a coefficient of thermal expansion matched to that of the first material; c) applying a mechanical and / or chemical-mechanical surface treatment to the complementary layer and to the tiles, in order to obtain the tiled donor substrate, wherein a front face of the substrate has a flat and continuous surface at which the plurality of tiles and the complementary layer are flush.

The invention provides a double-sided polishing device and a double-sided polishing method.The double-sided polishing method comprises the steps that firstly, a mechanical grinding process is executed, so that the face, away from a buried oxide layer, of a device wafer is thinned to the preset thickness, and the edge thickness difference of the device wafer meets the first preset threshold value; then executing a double-sided chemical mechanical polishing process to enable the edge thickness difference of the bonded wafer to meet a second preset threshold value; the carrier for executing the double-sided chemical mechanical polishing process comprises a lining and a substrate, the thickness difference between the lining and the substrate is 5-10 [mu] m, and the thickness of the lining is 770-780 [mu] m. By controlling the thickness of the lining and the thickness difference between the lining and the substrate of the carrier for the double-sided chemical mechanical polishing process, the edge thickness difference of the SOI wafer after the double-sided chemical mechanical polishing process meets the second preset threshold value, the edge thickness difference range of top silicon of the SOI wafer is improved, and the edge thickness uniformity of the SOI wafer is improved.

The present disclosure provides a method for preparing a material-filled protective photolithography mask, including: S1, depositing a photolithography mask material on a mask substrate to prepare a mask pattern structure; S2, filling a transparent dielectric material into the mask pattern structure; S3, annealing the mask obtained in S2; S4, chemically mechanically polishing the surface of the mask obtained in S3 to expose the mask pattern structure, thereby obtaining a material-filled protective photolithography mask. By filling the mask pattern structure with a material during the contact photolithography mask pattern processing, the present disclosure increases the contact area and strength between the mask pattern structure and the photosensitive material, thereby effectively improving the service life of the contact photolithography mask, reducing the mask processing cost, and expanding the application range of the contact photolithography technology.

This disclosure relates to a substrate treating method and a substrate treating system. The substrate treating method includes a rotating step of rotating a substrate in a horizontal posture by a holding rotator, a polishing step of performing polishing to a back face of the substrate in a chemo-mechanical grinding manner by contacting a polisher against the back face of the rotating substrate, the polisher having a resin body where abrasive grains are distributed, a heating step of heating the substrate while the polishing is performed, a resist coating step of coating a front face of the substrate, whose back face is subject to the polishing, with a resist, and an exposing step of exposing the resist with which the front face of the substrate is coated.

The invention discloses a composite structure substrate and a preparation method thereof, and an electronic device, the composite structure substrate sequentially comprises a supporting substrate, a bonding structure layer and a functional film layer, the functional film layer is obtained by performing surface treatment on a first functional layer and a second functional layer, a damage layer is formed on a first surface, far away from the supporting substrate, of the first functional layer; wherein the surface treatment comprises the following steps of: performing etching treatment on the first surface in the first functional layer to obtain the second functional layer; the etching thickness of the etching treatment is greater than the thickness of the damaged layer; and performing chemical mechanical polishing treatment on the second functional layer, removing the amorphous layer on the surface of the second functional layer, and performing thinning treatment to obtain the functional thin film layer. According to the invention, the surface treatment is converted into the functional thin film layer twice, so that better film thickness uniformity can be achieved, and the performance of the device can be improved.

The present disclosure describes a method and apparatus to remove consumable (e.g., sacrificial) polishing pad layers from a multilayer polishing pad. For example, the method includes measuring a thickness profile of a top polishing pad layer of a multilayer polishing pad and comparing the thickness profile to a threshold. The method, in response to the thickness profile being above the threshold, rinses the top polishing pad layer of the multilayer polishing pad and removes, after the top polishing pad layer has been rinsed, the top polishing pad layer to expose an underlying polishing pad layer of the multilayer polishing pad.

The invention relates to a self-stopping polishing composition and a method. A chemical mechanical polishing composition for polishing a substrate having a silica material, comprising, consisting of, or consisting essentially of: a liquid carrier; cubic ceria abrasive particles dispersed in the liquid carrier; a self-stopping agent; and a cationic polymer.

The present invention relates to a method for manufacturing a transparent ceramic three-dimensional structure using 3D printing and, specifically, to a method for manufacturing a transparent ceramic three-dimensional structure using 3D printing, the method comprising the steps of: preparing transparent ceramic particles; supplying a 3D printing slurry containing the transparent ceramic particles and a photocurable resin onto a 3D device plate and then irradiating same with light to form a printing layer, and forming a three-dimensional printing structure by repeating the process of forming the printing layer; sintering the three-dimensional printing structure; and polishing the surface of the sintered structure, wherein the maximum diameter of the transparent ceramic particles is less than or equal to the thickness of the printing layer, and the surface polishing step is a chemical-mechanical composite polishing step.

A rotating substrate support for use in a substrate processing system includes a cylindrical shaped outer hub having a first end, a second end, a wall that extends from the first end to the second end, and a central opening formed through the wall. The wall includes an inner surface, an outer surface, and a flexible region. A circumferential groove is formed in the outer surface of the wall and within the flexible region and includes a gap that extends in a first direction. The inner surface of the wall defines at least a portion of an inner region of the cylindrical shaped outer hub. A first support plate is coupled to a first portion of the inner surface, and a second support plate coupled to a second portion of the inner surface. An expandable actuator is configured to change a size of the gap by adjusting a distance in the first direction between the second support plate and the first support plate.

The application belongs to the field of mechanical processing, and discloses an endpoint detection method and system for polishing of high-hard-brittle materials, which comprises the following steps: step 1, constructing a mathematical model of chemical mechanical polishing; step 2, building a test platform to collect force and torque signals; step 3, designing a circuit of an edge computing platform; step 4, performing a parameter control experiment; step 5, developing a host computer system; step 6, finally obtaining a training set of a high-hard-brittle material processing state prediction model based on force and torque signals; step 7, training the processing state prediction model; and step 8, using the trained processing state prediction model to perform endpoint detection. The application uses polishing torque to perform online real-time detection on the polishing state and uses a state feedback method, so that the polishing processing efficiency can be improved, the polishing quality and the polishing yield can be improved, and the cost can be reduced.

A polishing slurry composition may include water and an abrasive including a cerium-based metal organic framework. The cerium-based metal organic framework may have a three-dimensional (3D) network structure including a plurality of cerium hexanuclear nanoclusters and a plurality of organic linkers. Each of the plurality of cerium hexanuclear nanoclusters may include six cerium atoms and each of the plurality of organic linkers may be connected between two corresponding cerium hexanuclear nanoclusters among the plurality of cerium hexanuclear nanoclusters. A method of manufacturing an integrated circuit (IC) device may include forming a film to be polished on a substrate, and polishing the film to be polished by performing a chemical mechanical polishing (CMP) process using the polishing slurry composition.

A chemical mechanical planarization (CMP) composition is provided that provides a tunable high Cu removal rate and a low Cu static etch rate for polishing a wide range of bulk or advanced node copper or silica through vias (TSVs). The CMP composition also provides high selectivity of Cu films over other barrier layers such as Ta, TaN, Ti, TiN, and SiN, and dielectric films such as TEOS, low-k, and ultra low-k films. The CMP composition includes an abrasive, an oxidizer, and at least two chelating agents selected from the group consisting of amino acids, amino acid derivatives, and combinations thereof, and the Cu static etch rate reducer includes, but is not limited to, organic alkyl sulfonic acids with linear or branched alkyl chains, and salts of organic alkyl sulfonic acids.

To provide a polishing pad having a heat management function.SOLUTION: A polishing pad for chemical mechanical polishing includes a polishing layer and an adjacent subpad layer. The polishing layer includes a polishing surface, a polishing layer interface opposite the polishing surface, a polishing layer thickness extending from the polishing surface to the polishing layer interface, and a recess extending from the polishing layer surface toward the polishing layer interface. The depth of the recess is at least 80% of the thickness of the polishing layer. The subpad layer has a subpad interface adjacent the polishing layer interface and a bottom surface opposite the subpad interface. The subpad layer has a thermal conductivity of 1-35 Watts / m-K. The combination of deep grooves in the top layer and the thermal conductivity of the subpad layer can facilitate thermal management at the polishing interface during polishing of a substrate.SELECTED DRAWING: Figure 3

This invention discloses a method for preparing highly stable gyromagnetic ferrites, belonging to the field of magnetic material preparation technology. The method includes formulation preparation, multi-stage sand milling and granulation, molding and sintering, composite structure preparation, and precision machining steps. The formulation consists of VIII-series, IIIB-series, lanthanide-series, IVB-series, and VIIB-series metal oxides in a specific molar ratio, with rare earth nano-additives added to enhance lattice stability. Uniform slurry particle size is achieved through two-stage sand milling and spray granulation. A curved sintering process is used to control the temperature rise and oxygen content to obtain a high-density green body. A yttrium iron garnet or dysprosium iron garnet functional layer is formed on the surface of the green body by magnetron sputtering, constructing a multi-layer composite structure. Finally, a conductive modification layer is formed on the surface through integrated laser cutting and chemical mechanical polishing. The gyromagnetic ferrite material prepared by this method exhibits high saturation magnetization, low high-frequency loss, and excellent thermal stability, making it suitable for 5G communication, radar, and high-frequency microwave devices.

A method and apparatus for the additive manufacturing of three-dimensional objects are disclosed. Two or more materials are extruded simultaneously as a composite, with at least one material in liquid form and at least one material in a solid continuous strand completely encased within the liquid material. A means of curing the liquid material after extrusion hardens the composite. A part is constructed using a series of extruded composite paths. The strand material within the composite contains specific chemical, mechanical, or electrical characteristics that instill the object with enhanced capabilities not possible with only one material.

The present invention relates to the technical field of chemical mechanical polishing pads, and provides a polishing layer of a chemical mechanical polishing pad, a preparation method thereof, and an application thereof. The polishing layer prepared by the preparation method of the present invention can effectively improve the edge rate of the profile during the polishing process, and is conducive to improving the consistency of the polishing rate at various locations of the wafer. The preparation method comprises the following steps: preparing a plurality of casting materials for preparing each of the polishing layer regions; providing a mold, wherein the casting cavity of the mold comprises a plurality of casting regions adapted to each of the polishing layer regions; respectively casting the plurality of casting materials into the corresponding casting regions, and obtaining the polishing layer comprising a plurality of polishing layer regions with different densities and hardnesses through curing and post-processing.

A method includes identifying a substrate thickness map of a substrate thinned via one or more chemical mechanical planarization (CMP) operations. The method further includes causing, based on the substrate thickness map, additional thinning of the substrate via etching of the substrate.

The invention relates to the technical field of carbon-carbon composite crucible polishing, and particularly discloses a polishing device for the inner wall of a carbon-carbon composite crucible, which comprises a base, a rotating frame is rotatably mounted at the top of the base, four rotating plates are rotatably mounted in the rotating frame, clamping mechanisms are arranged at the tops of the four rotating plates, and a fixing frame is mounted on the outer wall of the base. A movable frame is arranged outside the fixed frame, a polishing mechanism is installed in the movable frame, a notch is formed in the base, a rectangular batten is rotatably installed in the notch, and a pretreatment mechanism is arranged at the top of the rectangular batten. According to the polishing device for the inner wall of the crucible, through the arranged pretreatment mechanism, the inner wall of the crucible to be polished can be subjected to primary rough polishing treatment in advance by means of two polishing blocks before the inner wall of the crucible is polished, so that a subsequent polishing mechanism can more efficiently perform chemical mechanical polishing on the inner wall of the crucible; and when the device is used for polishing the inner walls of a large batch of crucibles, the efficiency is high, and the machining period is shortened.

The invention relates to a preparation method of a composite substrate and the composite substrate, and the method comprises the steps: providing a wafer bonding structure to be processed, the wafer bonding structure comprises a supporting substrate, a device substrate, and an insulating layer located between the supporting substrate and the device substrate, and the first surface side of the supporting substrate is provided with a cavity structure, the first surface is arranged towards the second surface of the device substrate; the device substrate is thinned to a preset thickness from the third surface of the device substrate, and the preset thickness is smaller than or equal to 10 micrometers; the thinning step comprises the substeps of thinning the device substrate by adopting a mechanical grinding process, wherein the mechanical grinding process comprises the substeps of thinning the device substrate by adopting a coarse grinding process until the thickness is greater than or equal to 120 microns; thinning the device substrate until the thickness is greater than or equal to 60 microns by adopting an accurate grinding process; thinning the device substrate to a third preset thickness by adopting a wet etching process; and reducing the thickness of the device substrate to a preset thickness by adopting a chemical mechanical grinding process. In this way, the device substrate can be thinned to be below 10 microns and is not damaged.

The present invention relates to a slurry composition for chemical-mechanical polishing, wherein the polishing rate for a low dielectric film is higher than the polishing rate for a silicon nitride film.

The present disclosure relates to a polishing head for a chemical mechanical polishing tool. In one embodiment, a polishing head, includes a housing, a perforated plate coupled to the housing, a flexible membrane disposed in the housing, and a retaining ring disposed around the membrane. The perforated plate includes a plurality of apertures disposed through the perforated plate. The plurality of apertures perforate at least 20% of a perforation surface of the perforated plate. The plurality of apertures comprise a first aperture and a second aperture. The flexible membrane and the perforated plate define a chamber. The flexible membrane includes a first surface facing the perforated plate and a second surface opposite the first surface.

The application discloses a polishing method of a substrate, comprising the following steps: mechanically polishing the edge of the substrate after chamfering the edge, so that the surface roughness of the edge of the substrate is less than 10nm; chemically mechanically polishing the edge of the substrate after mechanical polishing, and the chemical mechanical polishing comprises a rough polishing step and a fine polishing step in sequence; the rough polishing step comprises: using an acidic polishing liquid to rough polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.2nm; the fine polishing step comprises: when the substrate is a silicon carbide substrate, using an alkaline polishing liquid to fine polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.1nm; when the substrate is a gallium nitride substrate, using an acidic polishing liquid to fine polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.1nm. The polishing method of the substrate is used for reducing the probability of surface defects generated by the substrate, and improving the yield and quality of the substrate.

The invention relates to a chemical mechanical polishing solution for removing a polyimide film. The polishing solution comprises a grinding material, organic alkali, polyethylene glycol and water, the grinding material is aluminum oxide, and the particle size of the grinding material is 200-300 nm; the organic base is tetramethylammonium hydroxide. And the polishing pad is damping cloth during polishing. The hydroxyl free radicals promote the hydrolysis reaction of the surface of the polyimide film, and meanwhile, the polyimide film is rapidly removed through the interaction of the hard aluminum oxide abrasive and the soft damping cloth polishing pad on the polyimide film. According to the method, the surface quality of the polished polyimide film is improved, meanwhile, the removal rate is high, and the polyimide film with the smooth surface is efficiently prepared.