50 results about "Chemo mechanical" patented technology

A chemical mechanical planarization (CMP) composition is provided that provides a tunable high Cu removal rate and a low Cu static etch rate for polishing a wide range of bulk or advanced node copper or silica through vias (TSVs). The CMP composition also provides high selectivity of Cu films over other barrier layers such as Ta, TaN, Ti, TiN, and SiN, and dielectric films such as TEOS, low-k, and ultra low-k films. The CMP composition includes an abrasive, an oxidizer, and at least two chelating agents selected from the group consisting of amino acids, amino acid derivatives, and combinations thereof, and the Cu static etch rate reducer includes, but is not limited to, organic alkyl sulfonic acids with linear or branched alkyl chains, and salts of organic alkyl sulfonic acids.

To provide a polishing pad having a heat management function.SOLUTION: A polishing pad for chemical mechanical polishing includes a polishing layer and an adjacent subpad layer. The polishing layer includes a polishing surface, a polishing layer interface opposite the polishing surface, a polishing layer thickness extending from the polishing surface to the polishing layer interface, and a recess extending from the polishing layer surface toward the polishing layer interface. The depth of the recess is at least 80% of the thickness of the polishing layer. The subpad layer has a subpad interface adjacent the polishing layer interface and a bottom surface opposite the subpad interface. The subpad layer has a thermal conductivity of 1-35 Watts / m-K. The combination of deep grooves in the top layer and the thermal conductivity of the subpad layer can facilitate thermal management at the polishing interface during polishing of a substrate.SELECTED DRAWING: Figure 3

This invention discloses a method for preparing highly stable gyromagnetic ferrites, belonging to the field of magnetic material preparation technology. The method includes formulation preparation, multi-stage sand milling and granulation, molding and sintering, composite structure preparation, and precision machining steps. The formulation consists of VIII-series, IIIB-series, lanthanide-series, IVB-series, and VIIB-series metal oxides in a specific molar ratio, with rare earth nano-additives added to enhance lattice stability. Uniform slurry particle size is achieved through two-stage sand milling and spray granulation. A curved sintering process is used to control the temperature rise and oxygen content to obtain a high-density green body. A yttrium iron garnet or dysprosium iron garnet functional layer is formed on the surface of the green body by magnetron sputtering, constructing a multi-layer composite structure. Finally, a conductive modification layer is formed on the surface through integrated laser cutting and chemical mechanical polishing. The gyromagnetic ferrite material prepared by this method exhibits high saturation magnetization, low high-frequency loss, and excellent thermal stability, making it suitable for 5G communication, radar, and high-frequency microwave devices.

The invention relates to the technical field of carbon-carbon composite crucible polishing, and particularly discloses a polishing device for the inner wall of a carbon-carbon composite crucible, which comprises a base, a rotating frame is rotatably mounted at the top of the base, four rotating plates are rotatably mounted in the rotating frame, clamping mechanisms are arranged at the tops of the four rotating plates, and a fixing frame is mounted on the outer wall of the base. A movable frame is arranged outside the fixed frame, a polishing mechanism is installed in the movable frame, a notch is formed in the base, a rectangular batten is rotatably installed in the notch, and a pretreatment mechanism is arranged at the top of the rectangular batten. According to the polishing device for the inner wall of the crucible, through the arranged pretreatment mechanism, the inner wall of the crucible to be polished can be subjected to primary rough polishing treatment in advance by means of two polishing blocks before the inner wall of the crucible is polished, so that a subsequent polishing mechanism can more efficiently perform chemical mechanical polishing on the inner wall of the crucible; and when the device is used for polishing the inner walls of a large batch of crucibles, the efficiency is high, and the machining period is shortened.

The invention relates to a preparation method of a composite substrate and the composite substrate, and the method comprises the steps: providing a wafer bonding structure to be processed, the wafer bonding structure comprises a supporting substrate, a device substrate, and an insulating layer located between the supporting substrate and the device substrate, and the first surface side of the supporting substrate is provided with a cavity structure, the first surface is arranged towards the second surface of the device substrate; the device substrate is thinned to a preset thickness from the third surface of the device substrate, and the preset thickness is smaller than or equal to 10 micrometers; the thinning step comprises the substeps of thinning the device substrate by adopting a mechanical grinding process, wherein the mechanical grinding process comprises the substeps of thinning the device substrate by adopting a coarse grinding process until the thickness is greater than or equal to 120 microns; thinning the device substrate until the thickness is greater than or equal to 60 microns by adopting an accurate grinding process; thinning the device substrate to a third preset thickness by adopting a wet etching process; and reducing the thickness of the device substrate to a preset thickness by adopting a chemical mechanical grinding process. In this way, the device substrate can be thinned to be below 10 microns and is not damaged.

The present disclosure relates to a polishing head for a chemical mechanical polishing tool. In one embodiment, a polishing head, includes a housing, a perforated plate coupled to the housing, a flexible membrane disposed in the housing, and a retaining ring disposed around the membrane. The perforated plate includes a plurality of apertures disposed through the perforated plate. The plurality of apertures perforate at least 20% of a perforation surface of the perforated plate. The plurality of apertures comprise a first aperture and a second aperture. The flexible membrane and the perforated plate define a chamber. The flexible membrane includes a first surface facing the perforated plate and a second surface opposite the first surface.

The application discloses a polishing method of a substrate, comprising the following steps: mechanically polishing the edge of the substrate after chamfering the edge, so that the surface roughness of the edge of the substrate is less than 10nm; chemically mechanically polishing the edge of the substrate after mechanical polishing, and the chemical mechanical polishing comprises a rough polishing step and a fine polishing step in sequence; the rough polishing step comprises: using an acidic polishing liquid to rough polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.2nm; the fine polishing step comprises: when the substrate is a silicon carbide substrate, using an alkaline polishing liquid to fine polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.1nm; when the substrate is a gallium nitride substrate, using an acidic polishing liquid to fine polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.1nm. The polishing method of the substrate is used for reducing the probability of surface defects generated by the substrate, and improving the yield and quality of the substrate.

The present invention belongs to the technical field of substrate processing. Disclosed is a substrate processing method for improving the imaging quality of an infrared focal plane hybrid integrated chip. The infrared focal plane hybrid integrated chip is fabricated from an array die and a silicon readout integrated circuit by means of flip-chip bonding using indium bumps; and an epitaxial layer, a substrate / epitaxial layer interface and a substrate are sequentially arranged above the indium bumps along a first direction. The method comprises the following steps: step S1, thinning a substrate, and performing an adhesive and wax removal treatment; step S2, forming a protective layer on an electrode of a silicon readout integrated circuit; step S3, adhering a treated die and a dummy wafer to a glass substrate, and removing the thinned substrate by means of a chemico-mechanical polishing treatment; and step S4, removing, by means of a chemical polishing treatment, the portion of the epitaxial layer that is close to the substrate / epitaxial layer interface and has a set thickness, and performing cleaning. The technical solution has the following beneficial effects: a tellurium-zinc-cadmium substrate is removed by means of chemico-mechanical polishing, thereby reducing the loss rate and overcoming the problem of uneven corrosion; and an epitaxial material close to the substrate / epitaxial layer interface is removed by means of chemical polishing, thereby improving the imaging quality.

The invention provides a manufacturing method of a zero-layer alignment mark suitable for a multi-material active region substrate. The method comprises the following steps: forming a first dielectric layer on a substrate with a zero-layer alignment mark region and a channel region; etching the zero layer alignment mark area, and forming a groove in the substrate; forming a second dielectric layer for blocking epitaxial growth on the inner surface of the groove and the channel region; chemical mechanical planarization is carried out on the second dielectric layer, so that the second dielectric layer is reserved in the groove to form a lining; and removing the first dielectric layer. According to the method, the dielectric layer lining is formed in the zero-layer alignment marked groove in advance, so that the epitaxial material in the subsequent multi-material active region process is effectively prevented from filling the groove, and the marked step morphology is ensured to be kept after being subjected to chemical mechanical planarization. According to the method, the problem that in the prior art, the zero-layer alignment mark is rubbed down, so that the alignment signal disappears is solved, and stable and clear alignment signals can be provided for the subsequent photoetching step.

The invention relates to the technical field of semiconductor material precision machining, in particular to a chemical mechanical polishing solution as well as a preparation method and application thereof. The chemical mechanical polishing solution comprises the following components in percentage by mass: 6-12% of a composite abrasive, 3-7% of a composite oxidant, 2-5% of a complexing agent, 0.5-2% of a phosphine antidote, 0.3-1.5% of a dispersion stabilizer, 0.1-1% of a pH regulator and the balance of water. The composite abrasive is a composite material of aluminum oxide and silicon dioxide; the composite oxidant comprises a sodium hypochlorite solution and a hydrogen peroxide solution. Through reasonable proportioning and synergistic effect of the composite abrasive, the composite oxidant, the complexing agent, the phosphine antidote, the dispersion stabilizer and the pH regulator, the polishing solution is not only suitable for a single substrate, but also compatible with chemical mechanical polishing of three typical third-generation semiconductor materials of indium phosphide, gallium arsenide and germanium, has good universality and process adaptability, and is suitable for industrial production. And the production cost and the process switching complexity can be reduced.

Retaining rings used in chemical mechanical processing include a thermally conductive material formed from a base material and a material filler. The material filler is between 10% and 70% by weight relative to the material of the retaining ring.

Provided are a polishing head and a CMP device that are capable of adjusting the pressure in an accommodating pocket when a wafer is being polished. The CMP device includes the polishing head. The polishing head polishes the wafer by rotating while pressing the wafer against a polishing pad 14 to which slurry is being supplied. The polishing head 20 includes: a head body 25 having an air chamber 46 to which pressurized air is supplied; a template retainer 50 having an accommodating pocket 51 for accommodating the wafer; and a membrane film 45 provided between the head body 25 and the template retainer 50 and having suction-attachment holes 48 between the air chamber 46 and the accommodating pocket 51. The template retainer 50 has discharge passages 53 for discharging pressurized air that has flowed from the air chamber 46 into the accommodating pocket 51 to an external space.

1. The name of the design product: chemical mechanical polishing equipment. 2. The use of the design product: for chemical mechanical polishing, polishing, cleaning, drying and other related operations on wafers. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The application relates to a high-precision chemical mechanical polishing method for a mask substrate based on partition pressurization, which comprises the following steps: three concentric pressurization areas are divided in a ladder form from the pressurization center of a polishing head to the outside in the contact area of the polishing head and the mask substrate, so as to build a pressure gradient which decreases from the edge to the center of the mask substrate; the polishing head presses the mask substrate on a polishing disc according to the pressure gradient, and polishing liquid is applied between the mask substrate and the polishing disc, then the polishing head drives the mask substrate and the polishing disc to generate relative motion; the polishing head is driven to drive the mask substrate and the polishing disc to generate circumferential relative motion and radial relative reciprocating motion until the set polishing time is reached and the polishing is ended. Different pressures are applied to the mask substrate by different pressurization areas, the material removal rate of different pressure receiving areas of the mask substrate is regulated, and the surface type of the substrate is accurately regulated and the PV value is significantly optimized.

The utility model provides a chemical mechanical grinding device which comprises a grinding disc, a grinding pad and a vacuum adsorption assembly. The grinding disc is provided with a central first groove and a surrounding second groove; the grinding pad is provided with a bulge which is matched with the first groove, so that accurate positioning is realized; a suction cup of the vacuum adsorption assembly is located in the second groove, connected with the vacuum pipeline through a branch pipeline and used for fixing the grinding pad. According to the device, the grinding pad is fixed in a vacuum adsorption mode, the problems that in a traditional adhesion mode, the grinding pad is not prone to being torn down and prone to being obliquely attached, and water enters the edge and fails are solved, rapid replacement, accurate positioning and stable adsorption are achieved, and the grinding effect and the equipment performance are improved. The fixing layer of the grinding pad can be made of Teflon or polyether ether copper and other materials, the number of the suction cups is not less than three, the suction cups can be uniformly or non-uniformly distributed, and the stability and the applicability are further enhanced. The grinding machine is simple in structure, convenient to operate and suitable for various grinding scenes including high-precision grinding, and therefore the grinding machine has a wide application range.

1. Name of the designed product: film fixing ring (2) for polishing equipment 2. Use of the designed product: film fixing in chemical mechanical polishing (CMP) equipment 3. Design points of the designed product: in shape 4. Picture or photo best indicating the design points: perspective view

Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.

The present invention provides a polishing method and a substrate processing apparatus that enable effective polishing. [Solution] The polishing method comprises a rotation step of rotating the substrate W in a horizontal position; an etching step of supplying an etching solution to the back surface of the substrate W to remove a film formed on the back surface of the substrate W; and a polishing step of polishing the back surface of the substrate W by chemical mechanical grinding after removing the film from the back surface of the substrate W, by bringing a polishing tool having a resin body in which abrasive particles are dispersed into contact with the back surface of the rotating substrate W. The film is formed in the device manufacturing process. The etching step removes the film so that a portion of the film remains on the back surface of the substrate W.

A method includes forming a lower source / drain region, forming a upper source / drain region over the lower source / drain region, forming a contact etch stop layer over the upper source / drain region, and forming an inter-layer dielectric over the contact etch stop layer. The method further includes recessing the inter-layer dielectric to form a first recess, forming a first hard mask in the first recess, and forming a second hard mask in the first recess and over the first hard mask. A dummy gate stack aside of the second hard mask is removed to form a second recess, and a sacrificial material is deposited into the second recess. A chemical mechanical polish (CMP) process is performed on the sacrificial material, wherein remaining portion of the sacrificial material is left in the second recess to form a sacrificial region. Tn the CMP process, the second hard mask acts as a CMP stop layer.

The invention discloses high-polishing mirror surface die steel and a preparation process thereof, and belongs to the field of die steel materials. The steel is characterized by comprising the following chemical components in percentage by weight: 15.5-16.0% of Cr, 0.95-1.10% of V and 0.03-0.05% of Ce-La composite rare earth in a specific ratio, and the contents of S and O are strictly controlled. Through vacuum induction melting and electroslag remelting duplex smelting, multidirectional forging and composite heat treatment including subzero treatment and three-stage gradient tempering, an ideal structure which takes high dislocation martensite as a matrix and dispersively distributes nanoscale (Cr, Fe, V) 7C3 carbide and superfine spherical rare earth oxysulfide is finally obtained. After precise grinding, electrolytic polishing and chemical mechanical polishing, the die steel can achieve the ultrahigh mirror surface effect that the surface roughness Ra is smaller than or equal to 0.008 micron while maintaining the high hardness of 52-56 HRC and excellent wear resistance, and is suitable for high-end optical and exterior part dies.

The invention discloses a microcrystalline glass substrate with metalized through holes and a preparation method of the microcrystalline glass substrate, and belongs to the field of electronic device adapter plate manufacturing. The substrate comprises a microcrystal glass plate base material and a through hole vertically penetrating through the upper and lower planes of the microcrystal glass plate base material, and a metalized conductive structure is formed in the through hole. The preparation method comprises the following steps: performing irradiation modification on a selected area of a microcrystalline glass thin plate by adopting CO2 pulse laser to convert microcrystals in the thin plate into an amorphous phase, and then selectively and efficiently etching a laser modified columnar area in a corrosive liquid to form a through hole; the inner wall of the through hole is activated by SnCl2 in the later period, chemical nickel plating is conducted, annealing is conducted to form a seed layer so that the through hole can be filled through electro-coppering, and finally chemical mechanical polishing is used for removing metal on the surface of the microcrystal thin plate to complete preparation. According to the invention, the problem of processing the through hole of the microcrystalline glass is solved, and meanwhile, the palladium-free activation process is adopted, so that the cost is remarkably reduced, and an ideal substrate solution is provided for electronic packaging with high performance, high reliability and high cost performance.

This invention relates to the field of precision machining technology for semiconductor materials, and in particular to a chemical mechanical polishing (CMP) slurry, its preparation method, and its application. The CMP slurry comprises the following components by mass percentage: 6-12% composite abrasive, 3-7% composite oxidant, 2-5% complexing agent, 0.5-2% phosphine detoxifier, 0.3-1.5% dispersant stabilizer, 0.1-1% pH adjuster, and water as the balance. The composite abrasive is a composite material of alumina and silicon dioxide. The composite oxidant includes sodium hypochlorite solution and hydrogen peroxide solution. This invention, through the rational proportioning and synergistic effect of the composite abrasive, composite oxidant, complexing agent, phosphine detoxifier, dispersant stabilizer, and pH adjuster, is not only suitable for single substrates but also compatible with the CMP polishing of three typical third-generation semiconductor materials: indium phosphide, gallium arsenide, and germanium. It exhibits good versatility and process adaptability, helping to reduce production costs and process changeover complexity.

Method for manufacturing a microelectronic device. This description relates to a method for manufacturing a microelectronic device comprising the following steps: a) providing a substrate (100), a cavity (150) being formed from a first main face (101) of the substrate (100), the bottom (151) of the cavity (150) being made of a first material, the first main face (101) being made of a second material, b) performing selective epitaxy of a third material in the cavity (150), to form an epitaxial structure (200) filling and overflowing the cavity (150) by a thickness called the overflow, c) depositing an encapsulation layer (300) of a fourth material on the substrate (100) and the epitaxial structure (200), d) performing a CMP thinning step to remove the encapsulation layer (300) and the portion of the epitaxial material overflowing from the first main face (101).the thickness of the deposited encapsulation layer (300) being between 20 and 200% of the overflow thickness. Figure for the abbreviation: Fig. 1C,

A device comprises a substrate) of a first material with a surface, which is modified by depositing a bi-layer nanoparticle film. The film includes a nanoparticle layer of a second material on top of and in contact with surface, and a nanoparticle layer of a third material on top of and in contact with the nanoparticle layer of the second material. The nanoparticles of the third material adhere to the nanoparticles of the second material. The substrate region adjoining surface comprises an admixture of the second material in the first material. A fourth material contacts and chemically / mechanically bonds to the nanoparticle layer of the third material.

Methods of forming chemical-mechanical polishing / planarization pad conditioner bodies made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si / SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping / polishing with abrasive.

The present invention provides a detergent composition which enables thorough removal of a polishing agent, metal microparticles, and an anti-corrosion agent during washing of a semiconductor substrate as well as long-term maintaining of flatness of a metal wiring surface after washing, and which has excellent long-term quality stability, and a polishing composition capable of suppressing scratches on an object to be polished, such as a semiconductor substrate, and reducing filter clogging.　Provided are a detergent composition, which contains an alkanol hydroxylamine compound represented by formula (1) and has a pH of 10 to 13, and a chemical-mechanical polishing composition containing the detergent composition and a polishing agent. (In formula (1), Ra1 and Ra2 indicate alkyl groups which are the same or different, have a carbon number of 1 to 10, and have 1 to 3 hydrogen atoms or hydroxyl groups. Note, however, that Ra1 and Ra2 are not simultaneously hydrogen atoms, and the total number of the hydroxyl groups had by Ra1 and Ra2 is not zero.)

The present invention provides a cleaning composition comprising water; one or more organic acids; at least two surfactants, wherein a first type of surfactant is a diphenyldisulfone surfactant and a second type of surfactant has a surface tension of less than 50 dynes / cm at a concentration of 0.01 wt % in water, and the second type of surfactant is not a surfactant of the first type; and optionally a fluorine compound, a polymer, a corrosion inhibitor, a biological preservative, and a pH adjuster.

The application discloses a metal large-diameter thin plate part machining method and relates to the technical field of grinding and polishing. The method realizes efficient and low-stress thinning by electrochemical grinding of the thin plate, and converts the irregular surface shape of the workpiece into a central symmetric surface shape. Then, the surface shape error is controlled by a chemical mechanical grinding method with surface shape prediction capability, so that the surface shape error of the thin plate is reduced, over-processing is avoided, and resources are saved. In addition, only a general single-side grinding and polishing machine is needed, and the work disc diameter d1 and the thin plate diameter d2 satisfy d2 < d1 <= 2d2, so that the large-diameter thin plate part obtains micron-level surface shape precision, and the equipment cost is reduced. Finally, the electrochemical mechanical polishing realizes high surface quality machining of the thin plate, and on the basis that the surface shape precision is not obviously deteriorated, the surface quality of the machined surface is greatly improved. The application overcomes the problem that the metal large-diameter thin plate is sensitive to force and thermal load, and realizes high surface shape precision and high surface quality machining of the metal large-diameter thin plate.

The application discloses a square carrier head and a chemical mechanical polishing system, and relates to the technical field of semiconductor manufacturing. The square carrier head comprises a coupling disc, a square base connected concentrically to the coupling disc, a loading assembly connected below the square base and used for loading a substrate to be polished, a square retaining ring arranged below the square base and located at the outer circumferential side of the loading assembly, and an adjusting piece slidingly connected to the square base and vertically embedded in the corner of the square retaining ring. A floating assembly is arranged above the adjusting piece to push the adjusting piece to move up and down. The bottom surface of the adjusting piece abuts against the outer side area of the four corners of the substrate to drive the deformation of a polishing pad, so that the load of the corner of the substrate is changed to adjust the material removal rate of the corner of the substrate.

1. Name of the design product: film fixing ring (1). 2. Use of the design product: film fixing in chemical mechanical polishing (CMP) equipment. 3. Design points of the design product: in shape. 4. Picture or photo best indicating the design points: perspective view.