263 results about "Chemo mechanical" patented technology

A method for forming a damascene with improved electrical properties and resulting structure thereof including providing at least one dielectric insulating layer overlying a first etch stop layer; forming an anti-reflectance coating (ARC) layer prior to a photolithographic patterning process; forming at least one opening extending through a thickness portion of the at least one dielectric insulating layer and first etch stop layer according to said photolithographic patterning and an etching process; blanket depositing a barrier layer including material selected from the group consisting of silicon carbide and silicon oxycarbide to line the at least one opening; blanket depositing a refractory metal liner over the barrier layer; blanket depositing at least one metal layer to fill the at least one opening; and, removing at least the at least one metal layer overlying the at least one opening level according to a chemical mechanical polish (CMP) process.

New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The methods comprise demounting a device wafer from a carrier wafer or substrate that have only been strongly bonded at their outer perimeters. The edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided.

The present invention discloses a widely wavelength tunable polychrome colloidal photonic crystal device whose optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be tuned in a continuous and fine, rapid and reversible, reproducible and predictable fashion and over a broad spectral range by a controlled expansion or contraction of the colloidal photonic lattice dimension, effected by a predetermined change in the electronic configuration of the composite material. In its preferred embodiment, the material is a composite in the form of a film or a patterned film or shape of any dimension or array of shapes of any dimension comprised of an organized array of microspheres in a matrix of a cross-linked metallopolymer network with a continuously variable redox state of charge and fluid content. The chemo-mechanical and electro-mechanical optical response of the colloidal photonic crystal-metallopolymer gel is exceptionally fast and reversible, attaining its fully swollen state from the dry shrunken state and vice versa on a sub-second time-scale. These composite materials can be inverted by removal of the constituent microspheres from the aforementioned colloidal photonic crystal metallopolymer-gel network to create a macroporous metallopolymer-gel network inverse colloidal photonic crystal film or patterned film or shape of any dimension optical Bragg diffraction stop bands and higher energy bands wavelength, width and intensity can be redox tuned in a continuous and fine, rapid and reversible, reproducible and predictable fashion and over a broad spectral range by a controlled expansion or contraction of the colloidal photonic lattice dimensions.

A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si_1-yGe_y layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly seletive etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si_1-yGe_y, and strained Si_1-yGe_y depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si_1-yGe_yC or a heavily doped layer to make electrical contacts of the SiGe/Si heterojunction diodes.

The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.

A method that includes the following effects: the ability to expand, porositize, clean, decontaminate, debride, break-down and/or destroys, or aids and accentuates the dissolution or extraction of biological structures, nerves and tissues. The methodology uses nano-technology and/or other chemistries may or may not be excited by energy sources to expand and porositize the tissue, which enhances the penetration and effectiveness and acceleration of subsequent chemical, mechanical, and/or procedural steps in the protocol or process. Furthermore, the method includes the ability to associate with and/or initiate in the reconstructive growth and healing process associated with healthy tissue after surgery and/or the ability to destroy diseased or necrotic tissues or cells. The method also includes the ability to begin, construct or stage the activation of cells and/or tissues, including the area of transplantation and use in stem or primordial cell accentuation, their attachment and/or stimulation for growth and differentiation.

The invention provides a polishing pad for chemical-mechanical polishing comprising (a) a first polishing layer comprising a polishing surface and a first aperture having a first length and first width, (b) a second layer comprising a body and a second aperture having a second length and second width, wherein the second layer is substantially coextensive with the first polishing layer and at least one of the first length and first width is smaller than the second length and second width, and (c) a substantially transparent window portion, wherein the transparent window portion is disposed within the second aperture of the second layer so as to be aligned with the first aperture of the first polishing layer and the transparent window portion is separated from the body of the second layer by a gap. The invention further provides a chemical-mechanical polishing apparatus and method of polishing a workpiece.

A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistor is made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.

A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.

Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.

The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. In another embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material is dispersed throughout the organic material and has a dimension of about 5 to 1000 nm, and wherein the transparent window has a total light transmittance of about 30% or more at at least one wavelength in the range of about 200 to 10,000 nm. In yet another embodiment, the transparent window comprises an inorganic/organic hybrid sol-gel material. In an additional embodiment, the transparent window comprises a polymer resin and a clarifying material, wherein the transparent window has a total light transmittance that is substantially higher than a window comprising only the polymeric resin.

A structure in a semiconductor device useful in determining an endpoint in a chemical-mechanical polishing process is provided. The structure comprises a dielectric layer, an anti-reflective coating, and a metal layer. The dielectric layer has an opening extending therein. The anti-reflective coating extends over at least a portion of the first dielectric layer. The metal layer extends over at least a portion of the anti-reflective coating and within the opening. Thus, during the CMP process, the metal layer is removed, exposing the anti-reflective coating but leaving the metal layer in the opening to form a metal interconnect.

Chemical mechanical polish (CMP) devices, CMP systems, methods of CMP, and methods of manufacturing CMP devices. A CMP device comprises a plurality of zones, with each zone having a matrix of fixed abrasive features disposed therein. The abrasive-containing matrix within each zone has material removal properties that differ from the material removal properties of the abrasive-containing matrixes of the other zones. The material removal property differences of the abrasive-containing matrixes of the zones may achieved by using different abrasive materials, densities, heights, or shapes, or combinations thereof, of the fixed abrasive features within the zones, or by using physical or chemical conditioning. When the novel CMP device is used to planarize a semiconductor wafer, a substantially planar surface with an improved CMP profile results.

The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*10₁₁ atoms/cm₂ or less to produce the SiC monitor wafer.

The invention provides methods for fabricating ferroelectric capacitors and ferroelectric memory devices incorporating such capacitors. The methods according to the invention each include a partial chemical mechanical polishing process by which a planarized surface may be formed on a material layer formed between a buried contact plug and a ferroelectric layer. In particular, the methods according to the invention compensate for recessed or dishing regions formed in the surface of the buried contact plug to suppress or eliminate the propagation of profile of the recessed or dishing regions through intermediate layers to the ferroelectric layer, thereby improving the ferroelectric performance.