83 results about "Chemo mechanical" patented technology

The invention relates to a low-stress chemical mechanical etching process suitable for fragile materials, which belongs to the technical field of etching processing of fragile materials and comprises a precise chemical mechanical polishing machine, a polishing pad, a polishing solution conveying and managing system and end point detection equipment. The precise chemical mechanical polishing machine comprises a multi-zone pressure controllable polishing head, a high-precision rotating speed control system and a real-time thickness measuring system, a polishing pad is a polishing disc made of porous polyurethane materials, and the polishing liquid conveying and managing system comprises a multi-channel metering pump system and a stirring and temperature control unit. And the end point detection equipment comprises a surface profilometer, an atomic force microscope and a transmission electron microscope. According to the method, through fine cooperation of chemical reaction and mechanical grinding, microcrack initiation and propagation in the polishing process are effectively inhibited, surface and subsurface damage of the fragile material is remarkably reduced, the machined surface which is ultrahigh in smoothness and free of damage is obtained, and meanwhile the high material removal rate is kept.

The invention relates to a method for manufacturing a tiled donor substrate, the method comprising the following steps: a) providing an initial structure comprising a carrier substrate having a front face and a rear face, and a plurality of tiles made of a first monocrystalline material, wherein the tiles are arranged on the front face and are spaced apart from one another; b) forming a complementary layer by means of an additive manufacturing technique, wherein the complementary layer: - is arranged between the tiles, in contact with the front face of the carrier substrate; - is composed of a material, referred to as the second material, having a coefficient of thermal expansion matched to that of the first material; c) applying a mechanical and / or chemical-mechanical surface treatment to the complementary layer and to the tiles, in order to obtain the tiled donor substrate, wherein a front face of the substrate has a flat and continuous surface at which the plurality of tiles and the complementary layer are flush.

The present disclosure describes a method and apparatus to remove consumable (e.g., sacrificial) polishing pad layers from a multilayer polishing pad. For example, the method includes measuring a thickness profile of a top polishing pad layer of a multilayer polishing pad and comparing the thickness profile to a threshold. The method, in response to the thickness profile being above the threshold, rinses the top polishing pad layer of the multilayer polishing pad and removes, after the top polishing pad layer has been rinsed, the top polishing pad layer to expose an underlying polishing pad layer of the multilayer polishing pad.

A rotating substrate support for use in a substrate processing system includes a cylindrical shaped outer hub having a first end, a second end, a wall that extends from the first end to the second end, and a central opening formed through the wall. The wall includes an inner surface, an outer surface, and a flexible region. A circumferential groove is formed in the outer surface of the wall and within the flexible region and includes a gap that extends in a first direction. The inner surface of the wall defines at least a portion of an inner region of the cylindrical shaped outer hub. A first support plate is coupled to a first portion of the inner surface, and a second support plate coupled to a second portion of the inner surface. An expandable actuator is configured to change a size of the gap by adjusting a distance in the first direction between the second support plate and the first support plate.

The application belongs to the field of mechanical processing, and discloses an endpoint detection method and system for polishing of high-hard-brittle materials, which comprises the following steps: step 1, constructing a mathematical model of chemical mechanical polishing; step 2, building a test platform to collect force and torque signals; step 3, designing a circuit of an edge computing platform; step 4, performing a parameter control experiment; step 5, developing a host computer system; step 6, finally obtaining a training set of a high-hard-brittle material processing state prediction model based on force and torque signals; step 7, training the processing state prediction model; and step 8, using the trained processing state prediction model to perform endpoint detection. The application uses polishing torque to perform online real-time detection on the polishing state and uses a state feedback method, so that the polishing processing efficiency can be improved, the polishing quality and the polishing yield can be improved, and the cost can be reduced.

A chemical mechanical planarization (CMP) composition is provided that provides a tunable high Cu removal rate and a low Cu static etch rate for polishing a wide range of bulk or advanced node copper or silica through vias (TSVs). The CMP composition also provides high selectivity of Cu films over other barrier layers such as Ta, TaN, Ti, TiN, and SiN, and dielectric films such as TEOS, low-k, and ultra low-k films. The CMP composition includes an abrasive, an oxidizer, and at least two chelating agents selected from the group consisting of amino acids, amino acid derivatives, and combinations thereof, and the Cu static etch rate reducer includes, but is not limited to, organic alkyl sulfonic acids with linear or branched alkyl chains, and salts of organic alkyl sulfonic acids.

To provide a polishing pad having a heat management function.SOLUTION: A polishing pad for chemical mechanical polishing includes a polishing layer and an adjacent subpad layer. The polishing layer includes a polishing surface, a polishing layer interface opposite the polishing surface, a polishing layer thickness extending from the polishing surface to the polishing layer interface, and a recess extending from the polishing layer surface toward the polishing layer interface. The depth of the recess is at least 80% of the thickness of the polishing layer. The subpad layer has a subpad interface adjacent the polishing layer interface and a bottom surface opposite the subpad interface. The subpad layer has a thermal conductivity of 1-35 Watts / m-K. The combination of deep grooves in the top layer and the thermal conductivity of the subpad layer can facilitate thermal management at the polishing interface during polishing of a substrate.SELECTED DRAWING: Figure 3

This invention discloses a method for preparing highly stable gyromagnetic ferrites, belonging to the field of magnetic material preparation technology. The method includes formulation preparation, multi-stage sand milling and granulation, molding and sintering, composite structure preparation, and precision machining steps. The formulation consists of VIII-series, IIIB-series, lanthanide-series, IVB-series, and VIIB-series metal oxides in a specific molar ratio, with rare earth nano-additives added to enhance lattice stability. Uniform slurry particle size is achieved through two-stage sand milling and spray granulation. A curved sintering process is used to control the temperature rise and oxygen content to obtain a high-density green body. A yttrium iron garnet or dysprosium iron garnet functional layer is formed on the surface of the green body by magnetron sputtering, constructing a multi-layer composite structure. Finally, a conductive modification layer is formed on the surface through integrated laser cutting and chemical mechanical polishing. The gyromagnetic ferrite material prepared by this method exhibits high saturation magnetization, low high-frequency loss, and excellent thermal stability, making it suitable for 5G communication, radar, and high-frequency microwave devices.

A method includes identifying a substrate thickness map of a substrate thinned via one or more chemical mechanical planarization (CMP) operations. The method further includes causing, based on the substrate thickness map, additional thinning of the substrate via etching of the substrate.

The invention relates to the technical field of carbon-carbon composite crucible polishing, and particularly discloses a polishing device for the inner wall of a carbon-carbon composite crucible, which comprises a base, a rotating frame is rotatably mounted at the top of the base, four rotating plates are rotatably mounted in the rotating frame, clamping mechanisms are arranged at the tops of the four rotating plates, and a fixing frame is mounted on the outer wall of the base. A movable frame is arranged outside the fixed frame, a polishing mechanism is installed in the movable frame, a notch is formed in the base, a rectangular batten is rotatably installed in the notch, and a pretreatment mechanism is arranged at the top of the rectangular batten. According to the polishing device for the inner wall of the crucible, through the arranged pretreatment mechanism, the inner wall of the crucible to be polished can be subjected to primary rough polishing treatment in advance by means of two polishing blocks before the inner wall of the crucible is polished, so that a subsequent polishing mechanism can more efficiently perform chemical mechanical polishing on the inner wall of the crucible; and when the device is used for polishing the inner walls of a large batch of crucibles, the efficiency is high, and the machining period is shortened.

The invention relates to a preparation method of a composite substrate and the composite substrate, and the method comprises the steps: providing a wafer bonding structure to be processed, the wafer bonding structure comprises a supporting substrate, a device substrate, and an insulating layer located between the supporting substrate and the device substrate, and the first surface side of the supporting substrate is provided with a cavity structure, the first surface is arranged towards the second surface of the device substrate; the device substrate is thinned to a preset thickness from the third surface of the device substrate, and the preset thickness is smaller than or equal to 10 micrometers; the thinning step comprises the substeps of thinning the device substrate by adopting a mechanical grinding process, wherein the mechanical grinding process comprises the substeps of thinning the device substrate by adopting a coarse grinding process until the thickness is greater than or equal to 120 microns; thinning the device substrate until the thickness is greater than or equal to 60 microns by adopting an accurate grinding process; thinning the device substrate to a third preset thickness by adopting a wet etching process; and reducing the thickness of the device substrate to a preset thickness by adopting a chemical mechanical grinding process. In this way, the device substrate can be thinned to be below 10 microns and is not damaged.

The present disclosure relates to a polishing head for a chemical mechanical polishing tool. In one embodiment, a polishing head, includes a housing, a perforated plate coupled to the housing, a flexible membrane disposed in the housing, and a retaining ring disposed around the membrane. The perforated plate includes a plurality of apertures disposed through the perforated plate. The plurality of apertures perforate at least 20% of a perforation surface of the perforated plate. The plurality of apertures comprise a first aperture and a second aperture. The flexible membrane and the perforated plate define a chamber. The flexible membrane includes a first surface facing the perforated plate and a second surface opposite the first surface.

The application discloses a polishing method of a substrate, comprising the following steps: mechanically polishing the edge of the substrate after chamfering the edge, so that the surface roughness of the edge of the substrate is less than 10nm; chemically mechanically polishing the edge of the substrate after mechanical polishing, and the chemical mechanical polishing comprises a rough polishing step and a fine polishing step in sequence; the rough polishing step comprises: using an acidic polishing liquid to rough polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.2nm; the fine polishing step comprises: when the substrate is a silicon carbide substrate, using an alkaline polishing liquid to fine polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.1nm; when the substrate is a gallium nitride substrate, using an acidic polishing liquid to fine polish the edge of the substrate, so that the surface roughness of the edge of the substrate is less than 0.1nm. The polishing method of the substrate is used for reducing the probability of surface defects generated by the substrate, and improving the yield and quality of the substrate.

The invention relates to a chemical mechanical polishing solution for removing a polyimide film. The polishing solution comprises a grinding material, organic alkali, polyethylene glycol and water, the grinding material is aluminum oxide, and the particle size of the grinding material is 200-300 nm; the organic base is tetramethylammonium hydroxide. And the polishing pad is damping cloth during polishing. The hydroxyl free radicals promote the hydrolysis reaction of the surface of the polyimide film, and meanwhile, the polyimide film is rapidly removed through the interaction of the hard aluminum oxide abrasive and the soft damping cloth polishing pad on the polyimide film. According to the method, the surface quality of the polished polyimide film is improved, meanwhile, the removal rate is high, and the polyimide film with the smooth surface is efficiently prepared.

A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.

The present invention belongs to the technical field of substrate processing. Disclosed is a substrate processing method for improving the imaging quality of an infrared focal plane hybrid integrated chip. The infrared focal plane hybrid integrated chip is fabricated from an array die and a silicon readout integrated circuit by means of flip-chip bonding using indium bumps; and an epitaxial layer, a substrate / epitaxial layer interface and a substrate are sequentially arranged above the indium bumps along a first direction. The method comprises the following steps: step S1, thinning a substrate, and performing an adhesive and wax removal treatment; step S2, forming a protective layer on an electrode of a silicon readout integrated circuit; step S3, adhering a treated die and a dummy wafer to a glass substrate, and removing the thinned substrate by means of a chemico-mechanical polishing treatment; and step S4, removing, by means of a chemical polishing treatment, the portion of the epitaxial layer that is close to the substrate / epitaxial layer interface and has a set thickness, and performing cleaning. The technical solution has the following beneficial effects: a tellurium-zinc-cadmium substrate is removed by means of chemico-mechanical polishing, thereby reducing the loss rate and overcoming the problem of uneven corrosion; and an epitaxial material close to the substrate / epitaxial layer interface is removed by means of chemical polishing, thereby improving the imaging quality.

The invention provides a manufacturing method of a zero-layer alignment mark suitable for a multi-material active region substrate. The method comprises the following steps: forming a first dielectric layer on a substrate with a zero-layer alignment mark region and a channel region; etching the zero layer alignment mark area, and forming a groove in the substrate; forming a second dielectric layer for blocking epitaxial growth on the inner surface of the groove and the channel region; chemical mechanical planarization is carried out on the second dielectric layer, so that the second dielectric layer is reserved in the groove to form a lining; and removing the first dielectric layer. According to the method, the dielectric layer lining is formed in the zero-layer alignment marked groove in advance, so that the epitaxial material in the subsequent multi-material active region process is effectively prevented from filling the groove, and the marked step morphology is ensured to be kept after being subjected to chemical mechanical planarization. According to the method, the problem that in the prior art, the zero-layer alignment mark is rubbed down, so that the alignment signal disappears is solved, and stable and clear alignment signals can be provided for the subsequent photoetching step.

The invention relates to the technical field of semiconductor material precision machining, in particular to a chemical mechanical polishing solution as well as a preparation method and application thereof. The chemical mechanical polishing solution comprises the following components in percentage by mass: 6-12% of a composite abrasive, 3-7% of a composite oxidant, 2-5% of a complexing agent, 0.5-2% of a phosphine antidote, 0.3-1.5% of a dispersion stabilizer, 0.1-1% of a pH regulator and the balance of water. The composite abrasive is a composite material of aluminum oxide and silicon dioxide; the composite oxidant comprises a sodium hypochlorite solution and a hydrogen peroxide solution. Through reasonable proportioning and synergistic effect of the composite abrasive, the composite oxidant, the complexing agent, the phosphine antidote, the dispersion stabilizer and the pH regulator, the polishing solution is not only suitable for a single substrate, but also compatible with chemical mechanical polishing of three typical third-generation semiconductor materials of indium phosphide, gallium arsenide and germanium, has good universality and process adaptability, and is suitable for industrial production. And the production cost and the process switching complexity can be reduced.

Retaining rings used in chemical mechanical processing include a thermally conductive material formed from a base material and a material filler. The material filler is between 10% and 70% by weight relative to the material of the retaining ring.

Provided are a polishing head and a CMP device that are capable of adjusting the pressure in an accommodating pocket when a wafer is being polished. The CMP device includes the polishing head. The polishing head polishes the wafer by rotating while pressing the wafer against a polishing pad 14 to which slurry is being supplied. The polishing head 20 includes: a head body 25 having an air chamber 46 to which pressurized air is supplied; a template retainer 50 having an accommodating pocket 51 for accommodating the wafer; and a membrane film 45 provided between the head body 25 and the template retainer 50 and having suction-attachment holes 48 between the air chamber 46 and the accommodating pocket 51. The template retainer 50 has discharge passages 53 for discharging pressurized air that has flowed from the air chamber 46 into the accommodating pocket 51 to an external space.

1. The name of the design product: chemical mechanical polishing equipment. 2. The use of the design product: for chemical mechanical polishing, polishing, cleaning, drying and other related operations on wafers. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view.

The invention discloses a device manufacturing process for improving a metal overturning problem, and the process comprises the steps: S1, providing a wafer which comprises a substrate, a barrier layer and an interlayer dielectric layer are formed on the substrate, a groove is formed in the edge of the wafer, and the substrate at the bottom of the groove is exposed; s2, depositing a gate metal material which is used for forming a metal gate and filling the groove with the gate material; s3, performing a chemical mechanical polishing process on the gate metal material, and stopping at the barrier layer, with the gate metal material remaining in the groove; and S4, carrying out edge etching on the wafer so as to etch and remove the residual gate metal material in the groove. According to the scheme, the problem of metal residue overturning at the edge of the wafer in the prior art can be solved.

The present invention provides precision manufacturing equipment and methods for special-shaped thin-walled deep-cavity aluminum alloy parts. The method of the present invention includes a pressure casting mold for forming part blanks, multi-station aluminum alloy part thread processing equipment for processing threaded holes in parts, and chemical mechanical polishing equipment for polishing the surface of parts. The pressure casting mold for special-shaped thin-walled deep-cavity aluminum alloy parts of the present invention can quickly form multiple part blanks at one time, and the product has good mechanical properties and high surface quality, which solves the problems of large waste loss and low yield of such parts. The multi-station aluminum alloy part thread processing equipment has a simple equipment structure and can clamp multiple parts to be processed at one time, quickly completing thread processing, solving the problems of difficult clamping and low processing efficiency in mechanical processing of such parts. The chemical mechanical polishing equipment can clamp multiple parts to be processed at one time, and the parts are in contact with the polishing pad over a large area, with high polishing efficiency and automatic control of polishing liquid supply, discharge and cleaning.

The application relates to a high-precision chemical mechanical polishing method for a mask substrate based on partition pressurization, which comprises the following steps: three concentric pressurization areas are divided in a ladder form from the pressurization center of a polishing head to the outside in the contact area of the polishing head and the mask substrate, so as to build a pressure gradient which decreases from the edge to the center of the mask substrate; the polishing head presses the mask substrate on a polishing disc according to the pressure gradient, and polishing liquid is applied between the mask substrate and the polishing disc, then the polishing head drives the mask substrate and the polishing disc to generate relative motion; the polishing head is driven to drive the mask substrate and the polishing disc to generate circumferential relative motion and radial relative reciprocating motion until the set polishing time is reached and the polishing is ended. Different pressures are applied to the mask substrate by different pressurization areas, the material removal rate of different pressure receiving areas of the mask substrate is regulated, and the surface type of the substrate is accurately regulated and the PV value is significantly optimized.

The utility model provides a chemical mechanical grinding device which comprises a grinding disc, a grinding pad and a vacuum adsorption assembly. The grinding disc is provided with a central first groove and a surrounding second groove; the grinding pad is provided with a bulge which is matched with the first groove, so that accurate positioning is realized; a suction cup of the vacuum adsorption assembly is located in the second groove, connected with the vacuum pipeline through a branch pipeline and used for fixing the grinding pad. According to the device, the grinding pad is fixed in a vacuum adsorption mode, the problems that in a traditional adhesion mode, the grinding pad is not prone to being torn down and prone to being obliquely attached, and water enters the edge and fails are solved, rapid replacement, accurate positioning and stable adsorption are achieved, and the grinding effect and the equipment performance are improved. The fixing layer of the grinding pad can be made of Teflon or polyether ether copper and other materials, the number of the suction cups is not less than three, the suction cups can be uniformly or non-uniformly distributed, and the stability and the applicability are further enhanced. The grinding machine is simple in structure, convenient to operate and suitable for various grinding scenes including high-precision grinding, and therefore the grinding machine has a wide application range.

To provide a multifunctional endpoint detection window.SOLUTION: There is provided a polishing pad having a window extending through the polishing pad from a polishing surface to a backside surface of the pad. The window includes a top window material separated from a polishing material, and a bottom window. Therein a bottom window material is elastomeric and can deform into a void space adjacent to the bottom window material when the pad is under pressure during polishing. A seal between a subpad material and the top window material and / or the bottom window material or a seal between the polishing layer and the bottom window material prevents particles or liquid used in chemical mechanical polishing from passing from above the polishing layer to below a subpad layer. The pad can be used for polishing with either optical or vibrational end-point detection.SELECTED DRAWING: Figure 2B

To provide a chemical mechanical polishing (CMP) composition for polishing silicon (Si) surfaces.SOLUTION: A CMP composition includes a first polishing rate enhancer, a second polishing rate enhancer, and a silica abrasive to provide a composition that has advantageous properties such as a high Si polishing rate while maintaining low polishing debris formation.SELECTED DRAWING: None

The present invention provides a double-sided adhesive tape for adhering a polishing pad which includes an upper release film layer; a first adhesive layer; an adhesive tape substrate laminated on a lower surface of the first adhesive layer; a second adhesive layer laminated on a lower surface of the adhesive tape substrate; and a bubble discharge pattern-forming sheet layer which is laminated on a lower surface of the second adhesive layer, and includes a bubble discharge pattern formed as a protruding line on a laminated surface, and a chemical-mechanical polishing apparatus to which the adhesive tape is applied.

1. Name of the designed product: film fixing ring (2) for polishing equipment 2. Use of the designed product: film fixing in chemical mechanical polishing (CMP) equipment 3. Design points of the designed product: in shape 4. Picture or photo best indicating the design points: perspective view