Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers

a technology of chemical mechanical polishing pad and manufacturing process, which is applied in the direction of manufacturing tools, grinding devices, lapping machines, etc., can solve the problems of difficult to obtain a polishing pad, reduced or non-uniform polishing efficiency of the polishing pad, and inefficient polishing time, etc., to achieve the effect of not reducing the polishing efficiency

Inactive Publication Date: 2005-11-03
JSR CORPORATIOON
View PDF9 Cites 38 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011] Thirdly, the above objects of the present invention are attained by a method for the chemical mechanical polishing of a semiconductor wafer with the above chemical mechanical polishing pad, comprising detecting the end point of chemical mechanical polishing with an optical end-point detector through the light-transmitting member of the above chemical mechanical polishing pad of the present invention.

Problems solved by technology

Therefore, it is extremely inefficient to obtain a polishing time which differs according to the above polishing factors empirically.
However, it is apprehended that the polishing efficiency of the polishing pad is reduced or made non-uniform by forming the window.
Therefore, it is difficult to obtain a polishing pad which has a large window or an increased number of windows to ensure the detection of the end point by an optical end-point detector and which is free from the reduction of its polishing efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers
  • Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers
  • Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers

Examples

Experimental program
Comparison scheme
Effect test

example 1

1. Manufacture of Polishing Pad

[0129] 1-1. Production of Surface Treated β-cyclodextrin

[0130] 100 parts by weight of β-cyclodextrin (manufactured by Yokohama International Bio Research Laboratory Co., Ltd., trade name of Dexy Pearl β-100, average particle diameter of 20 μm) as water-soluble particles was fed to a mixer (Super Mixer SMZ-3SP of Kawata Co., Ltd.), 0.5 part by weight of γ-aminopropyltriethoxysilane (manufactured by Nippon Unica Co., Ltd., trade name of A-1100) was sprayed on the water-soluble particles for 5 minutes under agitation at 400 rpm, and the coated water-soluble particles were further stirred at 400 rpm for 2 minutes. Thereafter, the extracted particles were dried by heating in a vacuum drier set at 130° C. until the water content became 5,000 ppm or less to obtain surface treated β-cyclodextrin.

[0131] 1-2. Manufacture of Polishing Pad Having an Elliptic Hole

[0132] 66.5 vol % of 1,2-polybutadiene (manufactured by JSR Corporation, trade name of JSR RB830) ...

examples 2

Manufacture of Polishing Pad

[0152] 64 volt of 1,2-polybutadiene (manufactured by JSR Corporation, trade name of JSR RB830) and 16 volt of a styrene-butadiene elastomer (manufactured by JSR Corporation, trade name of JSR TR2827) both of which would be crosslinked to become a matrix material and 20 volt of the surface treated β-cyclodextrin produced in “1-1.” of Example 1 as a water-soluble substance were kneaded together by an extruder heated at 160° C. Thereafter, Percumyl D40 (trade name, manufactured by NOF Corporation, containing 40% by mass of dicumyl peroxide) was added in an amount of 0.4 part by mass (equivalent to 0.16 part by mass in terms of pure dicumyl peroxide) based on 100 parts by mass of the total of 1,2-polybutadiene and styrene-butadiene elastomer and further kneaded with the above kneaded product to carry out a crosslinking reaction at 160° C. in a press metal mold for 7 minutes to obtain a disk-like molded product having a diameter of 790 mm and a thickness of ...

examples 3

Manufacture of Polishing Pad

[0155] 80 volt of 1,2-polybutadiene (manufactured by JSR Corporation, trade name of JSR RB830) which would be crosslinked to become a matrix material and 20 volt of the surface treated β-cyclodextrin produced in “1-1.” of Example 1 as a water-soluble substance were kneaded together by an extruder heated at 160° C. Thereafter, Percumyl D40 was added in an amount of 0.8 part by mass (equivalent to 0.32 part by mass in terms of pure dicumyl peroxide) based on 100 parts by mass of 1,2-polybutadiene and further kneaded with the above kneaded product to carry out a crosslinking reaction at 160° C. in a press metal mold for 7 minutes to obtain a disk-like molded product having a diameter of 790 mm and a thickness of 3.2 mm. An elliptic hole (aspect ratio of 10) having a long diameter of 70 mm and a short diameter of 7 mm was formed at a position 195 mm away from the center of the pre-polishing substrate as the center thereof by an end mill of Kato Machinery Co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Fractionaaaaaaaaaa
Fractionaaaaaaaaaa
Fractionaaaaaaaaaa
Login to View More

Abstract

There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a chemical mechanical polishing pad, a manufacturing process thereof and a method of polishing a semiconductor wafer. [0002] More specifically, it relates to a chemical mechanical polishing pad capable of transmitting light without reducing its polishing efficiency, a manufacturing process thereof and a method of polishing a semiconductor wafer. [0003] The present invention is used for the polishing of a semiconductor wafer using an optical end-point detector. DESCRIPTION OF THE PRIOR ART [0004] In the polishing of a semiconductor wafer, after the purpose of polishing is accomplished, the polishing end point for terminating polishing can be determined based on a time obtained empirically. However, various materials are used to form the surface to be polished and the polishing time differs by each material. It is conceivable that the material forming the surface to be polished will change in the future. Further, the same ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B37/04B24D18/00
CPCB24D18/0009B24B37/04H01L21/304
Inventor HOSAKA, YUKIOSHIHO, HIROSHIMIYAUCHI, HIROYUKIOKAMOTO, TAKAHIROHASEFAWA, KOUKAWAHASHI, NOBUO
Owner JSR CORPORATIOON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com