33results about "Polishing compositions" patented technology

The invention relates to the field of solar cell manufacturing, and particularly discloses a polishing additive for solving the black core problem in the BC cell pre-rough polishing process and a use method of the polishing additive. 0.1-5% of a defoaming agent; 0.1 to 0.5 percent of pH (Potential of Hydrogen) regulator; and the balance of deionized water. According to the method, the accelerant, the defoaming agent and the pH regulator in a specific ratio are combined, so that the oxidation reaction on the surface of the silicon wafer is more uniform and controllable; the accelerant accelerates formation and dissolution of a surface oxide layer, and generation of black cores is effectively avoided; the synergistic effect of the defoaming agent ensures that bubbles generated by the reaction can be quickly desorbed, the problem of uneven local corrosion caused by bubble retention is prevented, the surface of the polished silicon wafer is completely free of black nuclei, and ideal surface conditions are provided for subsequent processes.

The invention discloses a monocrystalline silicon wafer alkali polishing additive and a preparation method and application thereof, and the alkali polishing additive comprises the following components by mass content: 0.5-4% of a reaction accelerator, 2-5% of a corrosion and scale inhibitor, 1.5-3% of a chelating agent, 1-3% of a pH regulator, 1-5% of a surfactant, 3-10% of a cosolvent and the balance of water according to the total mass of 100%. The alkali polishing additive is obvious in performance gain, good in etching selectivity and small in silicon wafer weight loss; the back polishing effect can be improved, the reflectivity of the silicon wafer is high, and the photoelectric conversion efficiency of a photovoltaic cell is improved; the anti-crystallization performance is excellent, and the environment is protected.

Compositions and methods that impart a hydrophobic finish to surfaces, such as, for example, automotive surfaces. The compositions comprise an amino functional silicone emulsion, an amphoteric surfactant, and, a non-ionic surfactant.

The invention relates to the technical field of chemical engineering and equipment, and discloses a continuous feeding reaction device for lignin photodegradation, which comprises a reaction tube, an LED light source array and a transducer arranged outside the reaction tube, and a rotating shaft arranged inside the reaction tube and driven by a rotation driving mechanism. A composite scraping mechanism is mounted on the rotating shaft and is used for forcibly scraping reaction liquid on the inner wall of the reaction tube to form a thin film. The transducer is used for generating an ultrasonic standing wave field to drive photocatalyst particles to form a high-density array; the LED light source array works in a pulse mode, and the triggering time of light pulses of the LED light source array is matched with the time when the density of the catalyst array reaches a peak value. Through the synergistic effect of dynamic film scraping self-cleaning, the sound field tissue catalyst and pulsed light synchronous irradiation, the problems of light shielding, easy blockage and slow mass transfer in a high-viscosity dark multiphase system are solved, and the reaction efficiency and stability are improved.

The invention discloses a green and environment-friendly processing method of low-emission rice, relates to the technical field of rice processing, and solves the problems of large emission of dust and wastewater, high energy consumption and low resource utilization rate in traditional processing. The method comprises the steps of raw grain pretreatment and purification, graded low-temperature grinding, biodegradable additive polishing, by-product resource recycling, tail gas multi-stage purification, wastewater treatment circulation and process regulation and control in combination with a multi-parameter optimization model. Results show that dust emission, wastewater reuse rate and unit energy consumption are reduced, byproduct utilization rate is increased, no chemical additive is left, rice safety is guaranteed, and the method is suitable for large-scale green processing.

The application discloses a kind of high etching rate and high flatness silicon wafer chemical polishing liquid and application, the silicon wafer chemical polishing liquid is by following mass percentage raw materials: 20-60% nitric acid, 3-15% hydrofluoric acid, 1-20% sulfuric acid, 5-30% phosphoric acid, 0.01-5% additive, the rest is water;Wherein additive is by rate stabilizer and flow regulator composition.The silicon wafer chemical polishing liquid prepared by the application can be chemically polished to silicon wafer below 35 DEG C, eliminate the residual stress and damage layer generated after polishing, reduce the risk of broken piece, and after chemical polishing treatment, the surface of silicon wafer is mirror surface, roughness (Ra) is less than 1nm, TTV is less than 0.2 μm.

Disclosed are a polyurethane for use in a polishing layer, and a polishing layer and a polishing pad using the same, the polyurethane including a terminal group represented by the following formula (I): R-(OX)n- (I) wherein R represents a monovalent hydrocarbon group having 1 to 30 carbon atoms that may be substituted with a heteroatom or may be interrupted by a heteroatom, X represents an alkylene group having 2 to 4 carbon atoms, 90 to 100% of the alkylene group being an ethylene group, and n represents a number from 8 to 120.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

This application relates to the field of automotive care chemicals, specifically disclosing a stain-removing automotive wax and its preparation method. The stain-removing automotive wax comprises the following raw materials in parts by weight: 14-18 parts of anti-fouling component, 18-23 parts of stain-removing gel, 9-11 parts of composite wax, 13-15 parts of emulsion, 10-13 parts of composite oil, 3-5 parts of emulsifier, 8-10 parts of thickener, and 5-8 parts of water; the anti-fouling component comprises fluoropropyl methylpolysiloxane-modified acrylate and titanium dioxide-modified mica powder in a mass ratio of 1:0.2-0.3. This application improves the stain-removing and anti-fouling performance of the automotive stain-removing wax, extending the service life and aesthetics of the automotive paint surface.

A pad for abrasive-free chemical planarization of a substrate includes a polymer layer configured to contact the substrate during abrasive-free chemical planarization. The polymer layer includes a plurality of reactive units covalently bonded within a polymer chain. Each reaction unit includes a functional group including one or more of a complexing agent or a hydrolytic agent for abrasive-free chemical planarization.

This invention belongs to the field of leather auxiliaries, specifically relating to a leather-specific polishing composite wax emulsion and its preparation method. The leather-specific polishing composite wax emulsion comprises the following raw materials in parts by weight: 20-25 parts intermediate wax emulsion, 30-35 parts synthetic emulsified oil, 3-6 parts organosilicon hand-feel agent, 3-7 parts oxidized polyethylene wax emulsion, 3-7 parts silicone-modified polyurethane emulsion, 0.2-0.4 parts preservative, and 20-30 parts water. This emulsion has a clear luster, a delicate, non-plastic feel, good polishing resistance, and can cover minor leather imperfections, solving the problems of existing products sticking to the polishing roller and easily scratching the leather blank, exhibiting excellent overall performance.

The invention relates to the technical field of solar cells, and particularly discloses a polishing additive for solving the problem of white spots in the pre-rough polishing process of a BC battery and a using method.The polishing additive is prepared from, by weight, 1.0%-10.0% of accelerant, 0.1%-5% of defoaming agent, 0.1%-0.5% of pH regulator, 0.01%-0.1% of surfactant and the balance deionized water; the accelerant is selected from one or a combination of more than two of sodium p-toluenesulfonate, perbenzoic acid, 2-nitroaniline, parachloronitrobenzene and sodium 2-methoxy-5-nitrophenolate; the accelerant is one or a combination of more than two of sodium p-toluenesulfonate, perbenzoic acid, 2-nitroaniline, parachloronitrobenzene and sodium 2-methoxy-5-nitrophenolate; by adopting an alcohol-free and phosphorus-free environment-friendly component design, the polishing additive obviously reduces the difficulty of subsequent sewage treatment while ensuring the efficient polishing performance, avoids the pollution of a traditional alcohol-containing and phosphorus-containing additive to the environment, effectively solves the problem that a silicon wafer is easy to generate white spots after a previous rough polishing process, and also has the advantages of simple process and low cost. And through an optimized surfactant and defoaming agent compounding technology, the surface flatness of the silicon wafer is further improved, and double breakthrough of environmental protection and performance is realized.

The invention provides a polyurethane material, a polishing material and a preparation method and application thereof. The polyurethane material is prepared from the following raw materials: copolymerized polyol, polyisocyanate, a chain extender and a catalyst, wherein the copolymerized polyol is polycarbonate-co-polyester polyol, polycarbonate-co-polyether polyol, polyester-co-polyether polyol, polysiloxane-co-polycarbonate polyol and poly (ethylene glycol); the copolymerized polyol is selected from the group consisting of polycarbonate-co-polyester polyol, polycarbonate-co-polyether polyol, polyester-co-polyether polyol, polysiloxane-co-polycarbonate polyol and poly (ethylene glycol); the polyol is selected from at least one of an epoxy olefin-co-cyclosiloxane hydrocarbon group polyol and a poly (epoxy olefin-block-siloxane hydrocarbon) group polyol, and the polyol is at least one of an epoxy olefin-co-cyclosiloxane hydrocarbon group polyol and a poly (epoxy olefin-block-siloxane hydrocarbon) group polyol. The polishing material is prepared from the raw materials including the polyurethane material, a cross-linking agent and a release agent. According to the invention, the problems of cross-linking curing and environmental protection of the polyurethane material are obviously improved, and the prepared polishing material can be used in the fields of chip, photoetching and wafer manufacturing.

The application discloses a semiconductor wafer polishing material and a preparation method thereof. The preparation method comprises the following steps: step 1, preparing a first component, a second component and a third component in any sequence respectively; the first component is an isocyanate prepolymer; the second component is an amino-terminated polyamic acid, and the number average molecular weight of the amino-terminated polyamic acid is 6000-10000; the third component is a mixture of a functional filler and an amine curing agent; and step 2, pouring and forming after mixing the first component, the second component and the third component uniformly, and obtaining the semiconductor wafer polishing material through heat treatment. The whole preparation process is simple and effective, the obtained polishing pad has good polishing effect and long service life.

The invention belongs to the technical field of semiconductor polishing treatment, and provides a wet polishing auxiliary agent for a BC photovoltaic cell and a preparation method of the wet polishing auxiliary agent. The auxiliary agent is composed of a quaternary ammonium chitosan solution, a chitosan imprinted gel dispersion, a betaine chitosan imprinted gel dispersion, a silane phosphonic acid polycarboxylic acid mother liquor, a polyacrylic acid solution, a sulfate inorganic electrolyte and deionized water. The preparation method comprises the following steps: quaternizing chitosan, constructing a pre-assembly system by using grease model molecules, crosslinking sodium tripolyphosphate and geniposide, eluting a template to form imprinted gel, and grafting by using a betaine monomer to obtain the betaine imprinted gel dispersion. Meanwhile, acrylic acid, polyether monomers and monomers containing sulfonic acid and phosphonic acid are copolymerized, silane groups are introduced, and polycarboxylic acid mother liquor is prepared; all the components are mixed and filtered to obtain a finished product, the finished product can be used for wet polishing, wetting and bubble removal can be improved, surface defects are reduced, the machining uniformity is improved, and more ideal texture morphology can be obtained under the same weight reduction condition.

The application belongs to the technical field of semiconductor materials, and discloses a method for reducing the silicon impurity concentration on the surface of an indium phosphide wafer. The method comprises the following steps: rough polishing of the indium phosphide wafer, then fine polishing of the indium phosphide wafer by using a fine polishing liquid; cleaning and drying of the indium phosphide wafer after fine polishing, and then treatment of the indium phosphide wafer by using a mixed weak acid; the fine polishing liquid comprises tripolyphosphate, thiosulfate, bicarbonate and citric acid; and the mixed weak acid comprises HF acid, NH4F and H2O2. The fine polishing liquid does not contain SiO2, and by adding citric acid in the fine polishing liquid, the chemical reaction between the indium phosphide wafer and the polishing liquid is enhanced, and in the subsequent cleaning process, the corrosion effect of the mixed weak acid is combined, so that the residual Si impurities and other impurities on the surface of the indium phosphide wafer can be reduced, the micro-roughness of the indium phosphide wafer can be effectively reduced, and the surface flatness and uniformity can be improved.

This invention relates to the field of polishing technology, and in particular to a polishing composition and polishing method. The polishing composition comprises an organic compound containing both quaternary ammonium groups and alkene bonds, and water. The polishing method involves providing a silicon surface to be polished, introducing the aforementioned polishing composition between the silicon surface and the polishing surface of a polishing tool, and bringing the silicon surface into contact with and relative to the polishing surface of the polishing tool. The polishing composition of this invention exhibits a certain silicon removal rate without the addition of abrasives, and the polished silicon surface displays excellent hydrophilicity.

The invention relates to the technical field of polishing, in particular to a polishing composition and a polishing method. The polishing composition comprises a water soluble cationic polymer and water; the polishing method comprises the following steps: providing a silicon surface to be polished, introducing the polishing composition between the silicon surface and a polishing surface of a polishing tool, and enabling the silicon surface and the polishing surface of the polishing tool to be in contact and relatively move. The polishing composition provided by the invention has a certain silicon removal rate under the condition that no abrasive is added, and the polished silicon surface has excellent hydrophilicity.

A pad for performing abrasive-free chemical planarization of a substrate comprises a polymer layer configured to contact the substrate during the abrasive-free chemical planarization. The polymer layer comprises a plurality of reactive units covalently bonded within polymer chains. Each reactive unit comprises a functional group comprising one or more of a complexing agent or a hydrolyzing agent for performing the abrasive-free chemical planarization.

The invention relates to anti-cracking polysiloxane dielectric planarization compositions, methods, and films. The present disclosure relates to a composition for planarizing a surface of a semiconductor device, the composition comprising a catalyst, at least one solvent, and at least one polysiloxane resin, the at least one polysiloxane resin comprising a polysilsesquioxane block and a polydisiloxane block. The polydisiloxane block includes at least one selected from the group consisting of an aryl group or an alkyl group having a substituted or unsubstituted carbon.

The present disclosure discloses a backside polishing additive for reducing alkali consumption, and a preparation method and a use thereof. The backside polishing additive includes components in percentages by mass as follows: 0.01% to 0.5% of a catalyst containing a nitrobenzene structure, 0.1% to 1% of a defoaming agent, 0.5% to 1.5% of a preservative, and the balance of water. The additive of the present disclosure enables a polishing reaction at a required alkali concentration or consumption lower than the conventional additive. Therefore, the present additive has more significant alkali-reducing capability than the conventional additive. Additionally, the silicon wafer obtained through the use of the additive of the present disclosure to conduct the alkali polishing reaction has a surface with a good flatness of the tower base and a high reflectivity, indicating a superior polishing effect, and resulting in a significant enhancement of the cell efficiency.

Described herein are dirt-repelling compositions and methods of use thereof. The compositions provide improved shine and color, as well as a non-oily finish. The compositions are durable and will prevent, for example, dirt and dust from sticking on an automotive surface.

The invention relates to a hydrophobic treatment composition for organic vehicle glazing comprising a dispersion of solid paraffin wax particles in a hydroalcoholic medium comprising water and 10 to 50% by weight of a C2-C3 alcohol, relative to the total weight of the composition. The invention also relates to a method for hydrophobicizing organic vehicle glazing comprising applying said composition to the glazing, as well as hydrophobic organic vehicle glazing obtained according to said method. No Figure

An apparatus for electrolytic polishing of metal surfaces by means of solid electrolytes, comprising: a container (6); an element (1) capable of containing at least two metal parts, meaning that it contains the parts (2) so as to avoid their coming out during the electrolytic polishing process, and at the same time allowing them to have a given movement within the element (1), and imparting electrical connectivity to the parts (2) by means of a first electrode (4a); a second electrode (4b); an electrical power source (3) connected to the first electrode (4a) and to the second electrode (4b); a medium consisting of particles (5) of a solid electrolyte in a gaseous environment; and means for generating a relative movement of the particles (5) with respect to the metal parts (2) to be polished.

The invention relates to a monocrystalline silicon solar cell alkaline polishing additive and an application method thereof, and belongs to the technical field of solar cells. The invention relates to an alkali polishing additive for a monocrystalline silicon solar cell. The alkali polishing additive comprises the following substances in percentage by weight: 0.5-1% of a surfactant; 1.5 to 2% of a defoaming agent; 0.5-1% of a reaction accelerator; 0.5-1% of an inorganic salt; and the balance of deionized water. By improving a traditional scheme, effectively combining the defoaming agent and the surfactant and optimizing the components of the defoaming agent and the surfactant, the phenomenon that bubbles are adsorbed on the surface of the silicon wafer in the alkali polishing process is improved, so that the flatness of the back surface is improved while'raindrop marks' are eliminated, the situations of missing polishing and excessive polishing after alkali polishing are effectively prevented, and the service life of the silicon wafer is prolonged. The flatness of the back surface of the silicon wafer is improved, the reflectivity is higher, and the efficiency of the cell is effectively improved.

The present invention is a planarizing agent for forming an organic film, including an aromatic-group-containing compound having a molecular weight represented by a molecular formula of 200 to 500, wherein a blended composition that includes the planarizing agent and a preliminary composition containing an organic film-forming resin and a solvent, and having a complex viscosity of 1.0 Pa·s or more in a temperature range of 175° C. or higher has a temperature range in which a complex viscosity of the blended composition is less than 1.0 Pa·s in a temperature range of 175° C. or higher. This provides a planarizing agent for forming an organic film to yield a composition for forming an organic film having a high planarizing ability; a composition for forming an organic film containing this planarizing agent; a method for forming an organic film using this composition; and a patterning process.

The invention provides an alkali polishing additive, a polishing solution and a polishing method. The alkali polishing additive comprises the following components in percentage by weight: 0.01%-10.0% of a polishing agent, 0.05%-1.5% of a pH regulator, 0.001%-2.5% of a stabilizer, 0.05%-2.5% of a first protective agent, 0.01%-1.0% of a second protective agent, 0.001%-1.0% of a defoaming agent and the balance of water, wherein the first protective agent is a polyhydroxy compound and / or a polyamino compound, and the second protective agent is a compound containing boron hydroxyl-B-OH; the pH value of the alkali polishing additive is not more than 3.5. According to the alkali polishing additive disclosed by the invention, two specific protective agents are combined and used, so that the alkali polishing additive disclosed by the invention can be used for etching a polycrystalline silicon layer and protecting a BSG / PSG layer in a high-temperature and strong-alkali environment, the alkali polishing process of a BC battery can be efficiently treated, the etching time is shortened, and the production efficiency is improved.

Pressure sensitive adhesive electrolytes (PSAE) prepared by two steps of polymerization, e.g., (a) UV slurry preparation and (b) curing by UV web polymerization or UV polymerization, a mixture comprising at least the following components: 4-86% by weight of acrylate monomers (a1) from (meth) acrylates having 4-44 carbon atoms and containing at least one oxygen atom, 0.5-50% by weight of acrylate monomers (a2) from (meth) acrylates having 4-44 carbon atoms and containing at least one oxygen atom, the invention relates to a composition comprising at least one polymer derived from a (meth) acrylic ester or amide having 4 to 25 carbon atoms and containing at least one nitrogen atom, 0.005 to 10% by weight of at least one initiator, preferably a thermal initiator and / or a photoinitiator, particularly preferably at least one photoinitiator, 0 to 35% by weight of a conductive salt, 2 to 60% by weight of an ionic liquid, and the balance of water. Wherein the ionic liquid is preferably a room temperature ionic liquid (RTIL), optionally, other additives such as plasticizers, antioxidants, tackifiers, chain transfer agents, fillers, corrosion inhibitors, oxygen scavengers, additional monomers, for example from 0 to 50% by weight, where optionally, one or more of the components is at least partially, e.g. Completely, at least partially, e.g., at least partially, at least partially, e.g., at least partially, at least partially, e.g., at least partially, at least partially, e.g., at least partially, at least partially, e.g., at least partially, at least partially, e.g., at least partially, at least partially, at least partially, the addition is only during or after the polymerization. By means of such PSAE conductivity according to the invention, an ionic conductivity of greater than 10 <-6 > S / cm to at least 10 <-3 > S / cm as measured in test B can be achieved, and the PSAE is suitable for applications such as electrochromic cells / dimming films and PSAs with electrical debonding functionality. In particular, by such PSAE conductivity according to the invention, an ionic conductivity of greater than 10 <-8 > S / cm to at least 10 <-3 > S / cm as measured by test B and a peel adhesion of up to about 9 N / cm as measured by test A can be achieved.

The invention belongs to the technical field of solar cells, and particularly discloses an additive for removing a TOPCon cell winding plating mark and a use method of the additive. The invention relates to an additive for removing a TOPCon battery wound plating mark, which comprises the following components in percentage by mass: 4 to 6 percent of polishing agent, 0.02 to 0.04 percent of protective agent, 0.2 to 0.4 percent of complexing agent, 2 to 4 percent of defoaming agent, 0.1 to 0.2 percent of hydroxamic acid compound, 0.1 to 1 percent of piperazinyl silane compound, 0.5 to 1.5 percent of sugar alcohol and the balance of deionized water, the additive disclosed by the invention not only can completely remove the winding plating mark without winding plating mark residue, but also can protect the BSG layer from being corroded, so that the yield and the efficiency of the battery are ensured.