54results about "Polishing compositions" patented technology

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

The invention relates to the field of solar cell manufacturing, and particularly discloses a polishing additive for solving the black core problem in the BC cell pre-rough polishing process and a use method of the polishing additive. 0.1-5% of a defoaming agent; 0.1 to 0.5 percent of pH (Potential of Hydrogen) regulator; and the balance of deionized water. According to the method, the accelerant, the defoaming agent and the pH regulator in a specific ratio are combined, so that the oxidation reaction on the surface of the silicon wafer is more uniform and controllable; the accelerant accelerates formation and dissolution of a surface oxide layer, and generation of black cores is effectively avoided; the synergistic effect of the defoaming agent ensures that bubbles generated by the reaction can be quickly desorbed, the problem of uneven local corrosion caused by bubble retention is prevented, the surface of the polished silicon wafer is completely free of black nuclei, and ideal surface conditions are provided for subsequent processes.

The invention discloses a monocrystalline silicon wafer alkali polishing additive and a preparation method and application thereof, and the alkali polishing additive comprises the following components by mass content: 0.5-4% of a reaction accelerator, 2-5% of a corrosion and scale inhibitor, 1.5-3% of a chelating agent, 1-3% of a pH regulator, 1-5% of a surfactant, 3-10% of a cosolvent and the balance of water according to the total mass of 100%. The alkali polishing additive is obvious in performance gain, good in etching selectivity and small in silicon wafer weight loss; the back polishing effect can be improved, the reflectivity of the silicon wafer is high, and the photoelectric conversion efficiency of a photovoltaic cell is improved; the anti-crystallization performance is excellent, and the environment is protected.

A pad for performing abrasive-free chemical planarization of a polycrystalline silicon (polysilicon) surface, the pad comprising a polymer layer incorporating a functional group reactive with polysilicon to remove silicon from the polysilicon surface.

Compositions and methods that impart a hydrophobic finish to surfaces, such as, for example, automotive surfaces. The compositions comprise an amino functional silicone emulsion, an amphoteric surfactant, and, a non-ionic surfactant.

The invention relates to a silicon material high-flatness CMP (chemical mechanical polishing) processing mode, which belongs to the technical field of semiconductors, and comprises the following operation steps of: 1, before a CMP mechanical polishing process, optimizing the structure and the material of polishing cloth, and manufacturing the polishing cloth by using a material with better elasticity and wear resistance, so that the stability and the durability of the polishing cloth in the polishing process can be improved; and secondly, in the CMP mechanical polishing process, polishing parameters are adjusted to improve flatness, increase polishing pressure and improve the material removal rate, but the polishing rotating speed and time need to be adjusted at the same time so as to prevent the surface roughness from being increased. And thirdly, the formula of the polishing solution is optimized, the chemical reaction rate and the material removal rate in the polishing process are adjusted, and therefore higher flatness is achieved. The structure, the material, the mechanical action and the chemical action of the polishing cloth are deeply analyzed, and a new perspective is provided for understanding physical and chemical mechanisms in the polishing process.

A method using silicon dioxide improves the cathodic anticorrosion effect of ground coats, preferably of a zinc primer, based on epoxy-functional polymers and at least one metal particle.

The invention relates to the technical field of chemical engineering and equipment, and discloses a continuous feeding reaction device for lignin photodegradation, which comprises a reaction tube, an LED light source array and a transducer arranged outside the reaction tube, and a rotating shaft arranged inside the reaction tube and driven by a rotation driving mechanism. A composite scraping mechanism is mounted on the rotating shaft and is used for forcibly scraping reaction liquid on the inner wall of the reaction tube to form a thin film. The transducer is used for generating an ultrasonic standing wave field to drive photocatalyst particles to form a high-density array; the LED light source array works in a pulse mode, and the triggering time of light pulses of the LED light source array is matched with the time when the density of the catalyst array reaches a peak value. Through the synergistic effect of dynamic film scraping self-cleaning, the sound field tissue catalyst and pulsed light synchronous irradiation, the problems of light shielding, easy blockage and slow mass transfer in a high-viscosity dark multiphase system are solved, and the reaction efficiency and stability are improved.

The invention discloses a green and environment-friendly processing method of low-emission rice, relates to the technical field of rice processing, and solves the problems of large emission of dust and wastewater, high energy consumption and low resource utilization rate in traditional processing. The method comprises the steps of raw grain pretreatment and purification, graded low-temperature grinding, biodegradable additive polishing, by-product resource recycling, tail gas multi-stage purification, wastewater treatment circulation and process regulation and control in combination with a multi-parameter optimization model. Results show that dust emission, wastewater reuse rate and unit energy consumption are reduced, byproduct utilization rate is increased, no chemical additive is left, rice safety is guaranteed, and the method is suitable for large-scale green processing.

The application discloses a kind of high etching rate and high flatness silicon wafer chemical polishing liquid and application, the silicon wafer chemical polishing liquid is by following mass percentage raw materials: 20-60% nitric acid, 3-15% hydrofluoric acid, 1-20% sulfuric acid, 5-30% phosphoric acid, 0.01-5% additive, the rest is water;Wherein additive is by rate stabilizer and flow regulator composition.The silicon wafer chemical polishing liquid prepared by the application can be chemically polished to silicon wafer below 35 DEG C, eliminate the residual stress and damage layer generated after polishing, reduce the risk of broken piece, and after chemical polishing treatment, the surface of silicon wafer is mirror surface, roughness (Ra) is less than 1nm, TTV is less than 0.2 μm.

Disclosed are a polyurethane for use in a polishing layer, and a polishing layer and a polishing pad using the same, the polyurethane including a terminal group represented by the following formula (I): R-(OX)n- (I) wherein R represents a monovalent hydrocarbon group having 1 to 30 carbon atoms that may be substituted with a heteroatom or may be interrupted by a heteroatom, X represents an alkylene group having 2 to 4 carbon atoms, 90 to 100% of the alkylene group being an ethylene group, and n represents a number from 8 to 120.

The invention belongs to the field of semiconductors, and particularly discloses a method for improving the surface quality of a gallium arsenide wafer. According to the method, the specific polishing solution is adopted for chemically and mechanically polishing the gallium arsenide, chemical and mechanical actions in the polishing process are matched with each other, the wafer falling rate in the gallium arsenide polishing process is increased, the wafer surface roughness is reduced, and the polishing quality is improved. And the surface of the polished gallium arsenide wafer is free of obvious corrosion pits, obvious lines, polishing solution residues, scratches and other defects, and the purpose of improving the overall quality of the surface of the gallium arsenide wafer is achieved.

To provide a floor coating whitening restoration agent that can simply repair and restore the coating whitened from alcohol adhesion back to its original condition.SOLUTION: A floor coating whitening restoration agent comprises (A component) 50 wt.%-90 wt.% of an alcohol and (B component) 10 wt.%-50 wt.% of one or more selected from ethylene glycol monoalkyl ether, methoxy butanol, diethylene glycol monoalkyl ether, diethylene glycol diethyl ether, triethylene glycol dialkyl ether, propyleneglycol alkyl ether, and dipropyleneglycol alkyl ether.SELECTED DRAWING: None

The invention relates to the use of silicon dioxide to improve the cathodic corrosion protection of primer coatings, preferably a zinc primer, based on epoxy-functional polymers and at least one metal particle.

A method comprises planarizing a substrate material with a functionalized chemical planarization pad. The functionalized chemical planarization pad includes a plurality of functional groups bonded to a material of the pad. The functional groups are configured to chemically react with the substrate material such that a portion of substrate material bonds to the functional groups. The pad is regenerated by applying a regeneration solution configured to break bonds between the functional groups and substrate material bonded to the functional groups to form removed material. The removed material is complexed in a dissolved complexing agent to form dissolved material in an effluent phase.

This application relates to the field of automotive care chemicals, specifically disclosing a stain-removing automotive wax and its preparation method. The stain-removing automotive wax comprises the following raw materials in parts by weight: 14-18 parts of anti-fouling component, 18-23 parts of stain-removing gel, 9-11 parts of composite wax, 13-15 parts of emulsion, 10-13 parts of composite oil, 3-5 parts of emulsifier, 8-10 parts of thickener, and 5-8 parts of water; the anti-fouling component comprises fluoropropyl methylpolysiloxane-modified acrylate and titanium dioxide-modified mica powder in a mass ratio of 1:0.2-0.3. This application improves the stain-removing and anti-fouling performance of the automotive stain-removing wax, extending the service life and aesthetics of the automotive paint surface.

A pad for abrasive-free chemical planarization of a substrate includes a polymer layer configured to contact the substrate during abrasive-free chemical planarization. The polymer layer includes a plurality of reactive units covalently bonded within a polymer chain. Each reaction unit includes a functional group including one or more of a complexing agent or a hydrolytic agent for abrasive-free chemical planarization.

This invention belongs to the field of leather auxiliaries, specifically relating to a leather-specific polishing composite wax emulsion and its preparation method. The leather-specific polishing composite wax emulsion comprises the following raw materials in parts by weight: 20-25 parts intermediate wax emulsion, 30-35 parts synthetic emulsified oil, 3-6 parts organosilicon hand-feel agent, 3-7 parts oxidized polyethylene wax emulsion, 3-7 parts silicone-modified polyurethane emulsion, 0.2-0.4 parts preservative, and 20-30 parts water. This emulsion has a clear luster, a delicate, non-plastic feel, good polishing resistance, and can cover minor leather imperfections, solving the problems of existing products sticking to the polishing roller and easily scratching the leather blank, exhibiting excellent overall performance.

The chemical liquid storage includes a container and a chemical liquid, wherein the chemical liquid contains at least one of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A / B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

The invention discloses an ultra-precision machining method and equipment based on enzymatic hydrolysis reaction, the machining method comprises the following steps: taking a polymer as a tool, soaking the polymer tool and a workpiece to be machined in a catalytic enzyme solution, and enabling the polymer tool to be in contact with the workpiece for machining; the catalytic enzyme catalyzes and accelerates polymer hydrolysis to generate active groups, and the active groups and a workpiece are subjected to a dehydration condensation reaction to remove a surface material of the workpiece. According to the method, more OH active groups are generated based on enzymatic hydrolysis, material removal is achieved through hydroxyl dehydration condensation reaction, subsurface damage is avoided, and the surface quality is higher.

The invention relates to the field of solar photovoltaics, in particular to a solar photovoltaic silicon wafer polishing solution additive and a solar photovoltaic silicon wafer polishing solution. The solar photovoltaic silicon wafer polishing solution additive comprises a chelating agent and a ligand, in the solar photovoltaic silicon wafer polishing solution additive, the addition amount of the ligand is greater than 0 and less than 0.15% by mass. When the polishing solution additive for the solar photovoltaic silicon wafer is used for carrying out alkali polishing on the back surface of the silicon wafer, calcium ions and a chelating agent can form a protecting group to protect the front surface of the silicon wafer, so that borosilicate glass and pyramid suede on the front surface of the silicon wafer are protected, and PN junction damage caused by etching of the borosilicate glass and the pyramid suede on the front surface of the silicon wafer is avoided. The addition amount of the calcium salt in the solar photovoltaic silicon wafer polishing solution additive is less than 0.15% by mass; the great influence on the tower footing and weight reduction of the polished silicon wafer is avoided; and the front protection of the silicon wafer is improved.

This invention belongs to the field of catalytic degradation technology, specifically relating to the pyrolysis of lignin model compounds, and more specifically to a perovskite / CTF composite photocatalyst, its preparation method, and its application. The method involves simultaneously combining and synthesizing CTF with cesium, bismuth, and bromine sources using a molten salt method to form a Cs3Bi2Br9 / CTF composite. The molten salt method is performed at a temperature of 170–370°C, and the mass ratio of CTF to cesium source is 1–10:1. This invention, through the composite of perovskite and CTF, not only achieves photocatalytic pyrolysis of lignin but also allows for fine-tuning of the photocatalyst's electronic structure, resulting in a suitable electronic structure and improved efficiency during the photocatalytic process. + and . O2 ‑ The generation of these compounds increases the yield of aromatic monomers prepared from lignin through pyrolysis.

The invention relates to the technical field of solar cells, and particularly discloses a polishing additive for solving the problem of white spots in the pre-rough polishing process of a BC battery and a using method.The polishing additive is prepared from, by weight, 1.0%-10.0% of accelerant, 0.1%-5% of defoaming agent, 0.1%-0.5% of pH regulator, 0.01%-0.1% of surfactant and the balance deionized water; the accelerant is selected from one or a combination of more than two of sodium p-toluenesulfonate, perbenzoic acid, 2-nitroaniline, parachloronitrobenzene and sodium 2-methoxy-5-nitrophenolate; the accelerant is one or a combination of more than two of sodium p-toluenesulfonate, perbenzoic acid, 2-nitroaniline, parachloronitrobenzene and sodium 2-methoxy-5-nitrophenolate; by adopting an alcohol-free and phosphorus-free environment-friendly component design, the polishing additive obviously reduces the difficulty of subsequent sewage treatment while ensuring the efficient polishing performance, avoids the pollution of a traditional alcohol-containing and phosphorus-containing additive to the environment, effectively solves the problem that a silicon wafer is easy to generate white spots after a previous rough polishing process, and also has the advantages of simple process and low cost. And through an optimized surfactant and defoaming agent compounding technology, the surface flatness of the silicon wafer is further improved, and double breakthrough of environmental protection and performance is realized.

The application relates to a polishing material, and particularly discloses a polishing material for fine polishing of silicon carbide and a preparation method of the polishing material. The polishing material for fine polishing of silicon carbide is prepared from raw materials including a carrier, a polyurethane coating and a polyethylene terephthalate film. The raw materials of the polyurethane coating include the following components in parts by weight: 80-120 parts of polyurethane resin, 40-60 parts of solvent and 1-20 parts of surfactant. The raw materials of the polyurethane resin include the following components in parts by weight: 20-35 parts of polyol composition, 0.1-1 part of chain extender, 3-9 parts of isocyanate, 60-70 parts of solvent and 0.02-0.04 part of end-capping agent. The polishing material has good oxidation resistance and a long service life.

The invention provides a polyurethane material, a polishing material and a preparation method and application thereof. The polyurethane material is prepared from the following raw materials: copolymerized polyol, polyisocyanate, a chain extender and a catalyst, wherein the copolymerized polyol is polycarbonate-co-polyester polyol, polycarbonate-co-polyether polyol, polyester-co-polyether polyol, polysiloxane-co-polycarbonate polyol and poly (ethylene glycol); the copolymerized polyol is selected from the group consisting of polycarbonate-co-polyester polyol, polycarbonate-co-polyether polyol, polyester-co-polyether polyol, polysiloxane-co-polycarbonate polyol and poly (ethylene glycol); the polyol is selected from at least one of an epoxy olefin-co-cyclosiloxane hydrocarbon group polyol and a poly (epoxy olefin-block-siloxane hydrocarbon) group polyol, and the polyol is at least one of an epoxy olefin-co-cyclosiloxane hydrocarbon group polyol and a poly (epoxy olefin-block-siloxane hydrocarbon) group polyol. The polishing material is prepared from the raw materials including the polyurethane material, a cross-linking agent and a release agent. According to the invention, the problems of cross-linking curing and environmental protection of the polyurethane material are obviously improved, and the prepared polishing material can be used in the fields of chip, photoetching and wafer manufacturing.

The application discloses a semiconductor wafer polishing material and a preparation method thereof. The preparation method comprises the following steps: step 1, preparing a first component, a second component and a third component in any sequence respectively; the first component is an isocyanate prepolymer; the second component is an amino-terminated polyamic acid, and the number average molecular weight of the amino-terminated polyamic acid is 6000-10000; the third component is a mixture of a functional filler and an amine curing agent; and step 2, pouring and forming after mixing the first component, the second component and the third component uniformly, and obtaining the semiconductor wafer polishing material through heat treatment. The whole preparation process is simple and effective, the obtained polishing pad has good polishing effect and long service life.

The invention belongs to the technical field of semiconductor polishing treatment, and provides a wet polishing auxiliary agent for a BC photovoltaic cell and a preparation method of the wet polishing auxiliary agent. The auxiliary agent is composed of a quaternary ammonium chitosan solution, a chitosan imprinted gel dispersion, a betaine chitosan imprinted gel dispersion, a silane phosphonic acid polycarboxylic acid mother liquor, a polyacrylic acid solution, a sulfate inorganic electrolyte and deionized water. The preparation method comprises the following steps: quaternizing chitosan, constructing a pre-assembly system by using grease model molecules, crosslinking sodium tripolyphosphate and geniposide, eluting a template to form imprinted gel, and grafting by using a betaine monomer to obtain the betaine imprinted gel dispersion. Meanwhile, acrylic acid, polyether monomers and monomers containing sulfonic acid and phosphonic acid are copolymerized, silane groups are introduced, and polycarboxylic acid mother liquor is prepared; all the components are mixed and filtered to obtain a finished product, the finished product can be used for wet polishing, wetting and bubble removal can be improved, surface defects are reduced, the machining uniformity is improved, and more ideal texture morphology can be obtained under the same weight reduction condition.