612 results about "End point detection" patented technology

Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.

Methods and apparatus for film measurement and endpoint detection in a noisy environment, such as CMP processing of semiconductor wafers, are disclosed, characterized by the use of spectral analysis of intensity data derived from light reflected off the sample to estimate film thickness or detect an endpoint condition.

An apparatus for detecting the end-point of an electropolishing process of a metal layer formed on a wafer includes an end-point detector. The end-point detector is disposed adjacent the nozzle used to electropolish the wafer. In one embodiment, the end-point detector is configured to measure the optical reflectivity of the portion of the wafer being electropolished.

An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

The present invention relates to a dual-factor identity authentication method and system based on voiceprint recognition and face recognition. The authentication method comprises the steps of: detecting a user's face image; marking key points; checking face similarity by a face authentication unit; generating a password; collecting voice data and user ID; processing the voice data; checking the password by a text content checking unit; checking the voiceprint similarity by a voiceprint authentication unit. The authentication system comprises, at a client end, a face detection unit, a face key point calibration unit, a face authentication unit, a first password generation unit and a voice end point detection unit, and at a sever end, a voice recognition unit, the text content checking unit, a voiceprint feature vector extraction unit and the voiceprint authentication unit. The dual-factor identity authentication method and system have the excellent effects that voice recognition is added based on voiceprint and face recognition, and security and reliability of authentication are improved; the password is independently performed at the client end and the server end, and is not transmitted between the server end and the client end in a form of text or encrypted text, thus high security is achieved.

The present invention provides an end point detection method and system of a voice identification system, wherein the method comprises the steps of training an acoustics identification model based on a long/short term memory neural network; primarily identifying a voice end point of a to-be-identified voice signal by a preset voice end point detection algorithm; extracting the voice characteristic information of the to-be-identified voice signal frame by frame, and inputting the voice characteristic information in the acoustics identification model to enable the acoustics identification model to generate an acoustics identification result of the to-be-identified voice signal according to the voice characteristic information; adjusting the primarily identified voice end point according to the acoustics identification result. The end point detection method of the voice identification system of the embodiment of the present invention provides an end point detection mode of adjusting the primarily identified voice end point by the acoustics identification result, thereby positioning the voice end point of the to-be-identified voice signal accurately, improving the voice end point detection accuracy, and further being able to improve the voice identification accuracy, and improving the performance of the voice identification system.

A system and method for detecting an endpoint during a chemical mechanical polishing process is disclosed that includes illuminating a first portion of a surface of a wafer with a first broad beam of light. A first reflected spectrum data is received. The first reflected spectrum of data corresponds to a first spectra of light reflected from the first illuminated portion of the surface of the wafer. A second portion of the surface of the wafer with a second broad beam of light. A second reflected spectrum data is received. The second reflected spectrum of data corresponds to a second spectra of light reflected from the second illuminated portion of the surface of the wafer. The first reflected spectrum data is normalized and the second reflected spectrum data is normalized. An endpoint is determined based on a difference between the normalized first spectrum data and the normalized second spectrum data.

A method for performing a network handoff between different network communication providers for a wireless endpoint includes: calculating a first cost value for a first network detected by the wireless endpoint according to a first cost function calculation, calculating a second cost value for a second network detected by the wireless endpoint according to a second cost function calculation, utilizing a cost function based wavelet predictor to determine a network handoff time according to at least one of the first and second cost functions, and executing the network handoff between the first network and the second network at the network handoff time, wherein the cost function based wavelet predictor is for predicting future trends of various network characteristics.

Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window. Although deposition material may be deposited onto portions of the folded radiation path, in many applications, the deposition material will be sufficiently reflective to permit the emission spectra to be detected by a spectrometer or other suitable detector without significant signal loss. The etching or resputtering may be terminated when the detector detects that an underlying layer has been reached or when some other suitable process point has been reached.

The invention relates to a method for extracting and identifying characteristics of an electro-ocular signal, which is characterized by comprising three stages, namely pretreatment of the electro-ocular signal, extraction of characteristic parameters of the electro-ocular signal and mode identification of the electro-ocular signal, wherein in the pretreatment stage, endpoint detection and bandpass filtering on the electro-ocular signal are carried out; in the characteristic parameter extraction stage, frame separation and windowing on the electro-ocular signal are carried out, and an electro-ocular characteristic parameter sequence changed along with time after converting the continuous electro-ocular signal into a plurality of sections of short-time electro-ocular signals is extracted; and in the mode identification stage, similarity comparison between the input electro-ocular characteristic parameter sequence and each template of a template base sequentially through a dynamic time normalization method is carried out so as to judge the corresponding eye movement of the operator. The method has the characteristics of high identification accuracy of the electro-ocular signal, certain antijamming capacity, strong application value and the like.

A combined laser and charged particle beam system. A pulsed laser enables milling of a sample at material removal rates several orders of magnitude larger than possible for a focused ion beam. In some embodiments, a scanning electron microscope enables high resolution imaging of the sample during laser processing. In some embodiments, a focused ion beam enables more precise milling of the sample. A method and structure for deactivating the imaging detectors during laser milling enables the removal of imaging artifacts arising from saturation of the detector due to a plasma plume generated by the laser beam. In some embodiments, two types of detectors are employed: type-1 detectors provide high gain imaging during scanning of the sample with an electron or ion beam, while type-2 detectors enable lower gain imaging and endpoint detection during laser milling.

An end point detection system may compare a production image developed during processing of production semiconductor wafer with a reference image. The reference image is representative of a desired state of processing of the production semiconductor wafer. The reference image is determined by processing a reference semiconductor wafer. The reference semiconductor wafer may be part of a wafer group of similar wafers that includes the production semiconductor wafer. The end point detection system may dynamically develop the production image during processing of the production semiconductor wafer. Indication may be provided by the end point detection system when the reference image and the production image are substantially similar.

A method for constructing a magnetic write head for use in perpendicular magnetic recording, the write head having a write pole with a trailing shield that wraps around the write pole. The method allows the trailing shield to be constructed with a very well controlled trailing gap thickness and also allows the write pole to be constructed with a well controlled track width and a straight, flat trailing edge. The method includes depositing a magnetic write pole over a substrate and forming a mask structure over the write pole layer. The mask structure includes an end point detection layer that can be removed by reactive ion etching. An ion mill is performed to form a write pole by removing magnetic write pole material that is not covered by the mask layer. A layer of non-magnetic material such as alumina is deposited and is ion milled to expose the end point detection layer. The end point detection layer is then removed by reactive ion etch and a magnetic wrap around trailing shield is deposited.

The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.

A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.

A method of determining a parameter of interest during processing of a patterned substrate includes obtaining a measured net reflectance spectrum resulting from illuminating at least a portion of the patterned substrate with a light beam having a broadband spectrum, calculating a modeled net reflectance spectrum as a weighted incoherent sum of reflectances from different regions constituting the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. For wavelengths below a selected transition wavelength, a first optical model is used to calculate the reflectance from each region as a weighted coherent sum of reflected fields from thin film stacks corresponding to laterally distinct areas constituting the region. For wavelengths above the transition wavelength, a second optical model based on effective medium approximation is used to calculate the reflectance from each region.

The invention relates to an automatic rubber tapping machine for rubber tree rubber picking. The machine comprises a tapping frame and is characterized in that the tapping frame is formed by a support rod and a support arm. A cut depth location structure, a curved cutter moving structure, an automatic line feed location structure, an end point detection structure, a solar power structure and a control structure are arranged on the tapping frame. The end point detection structure is used for detecting the moving track of a cutter in the curved cutter moving structure, and the signal output end of the end point detection structure is connected with the signal input end of the control structure. The control output end of the control structure is connected with the control input ends of the cut depth location structure, the curved cutter moving structure and the automatic line feed location structure through driving mechanisms. The cut depth location structure is provided with a cutter tapping depth adjusting and locating mechanism. The curved cutter moving structure is provided with a mechanism capable of achieving arc movement, lateral movement and vertical movement simultaneously. Therefore, the automatic rubber tapping machine allowing cut depth location, end point detection limiting, automatic line feed location and the arc tapping track is formed. The automatic rubber tapping machine has the advantages of being capable of reducing labor quantity of rubber picking workers and lays a device foundation for large scale rubber automatic production and the like.

A voice endpoint detection method based on real-time decoding includes the following steps: inputting texts related to voice recognition, analyzing the texts, constructing a decoding network according to text analyzing results, inputting voice, extracting acoustic characteristics in the voice, decoding the acoustic characteristics based on the constructed decoding network to obtain a decoded voice unit sequence, conducting voice endpoint judgment on the decoded voice unit sequence to judge whether voice endpoints exist or not, dividing voice endpoints into voice starting points and voice ending points, feeding voice endpoint information to an external application system on yes judgment and continuing step2 on no judgment. The voice starting point judgment is selectable in the third step, and voice starting point is not judged if the external application system does not care about the voice starting point. The voice endpoint detection method resolves the problem that targeted detection cannot be conducted on voice cared by users due to the fact that real time performance of the traditional endpoint detection technology is not high under the condition that voice recognition texts are not determined.

An improved method of forming the buried plate regions in deep trench capacitors used in DRAM memory semiconductor circuits in which the polymer used in the deep trench is etched down to the desired depth in a reactive ion etch tool using an O2/CF4 chemistry. Since optical/interferometric etch end-point detection system can be used to monitor the etch back step in its totality, the quantity of the polymer remaining in deep trenches can be very accurately controlled, which in turn will produce a well controlled buried plate region during the out-diffusion step of the arsenic dopant contained in the arsenic doped silicon glass layer.

There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.