602results about How to "Uniform film thickness" patented technology

The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 μm with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well.

A multilayer printed circuit board has an IC chip 20 included in a core substrate 30 in advance and a transition layer 38 provided on a pad 24 of the IC chip 20. Due to this, it is possible to electrically connect the IC chip to the multilayer printed circuit board without using lead members and a sealing resin. Also, by providing the transition layer 38 made of copper on the die pad 24, it is possible to prevent resin residues on the pad 24 and to improve connection characteristics between the pad 24 and a via hole 60 and reliability.

In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.

An aqueous electric double layer capacitor having excellent wettability with aqueous electrolytic solution, low internal resistance, excellent easiness of forming uniform, thin and wide films and mechanical strength. Activated carbon powder, a polymeric binder having a hydrophilic group and a plasticizer are fully mixed to form a film which is then dried to form an electrode. By using a polymer having a hydrophilic group as a binder, wettability between an aqueous electrolytic solution and the electrode is improved and contact resistance between an electrolysis solution and the electrode can be reduced. In addition, by adding a plasticizer, the amount of polymer binder required to form a thin type electrode can be reduced, thus providing an aqueous solution electric double layer capacitor with low internal resistance.

A film formation source of a vacuum film formation apparatus for forming thin film on the film formation surface of a substrate comprises: a material accommodating unit containing a film formation material; heating means for heating the film formation material contained within the material accommodating unit; a film formation flow control unit provided at an emission outlet of the material accommodating unit for controlling the direction of the film formation flow. The film formation flow control unit provides a strong directivity to the film formation flow with respect to the moving direction of the film formation surface relative to the film formation source.

A vapor-depositing mask is disposed adjacent a surface of a substrate disposed in a vacuum chamber, vapor-depositing beams containing an organic EL material are generated by a vapor-depositing beam generator, the vapor-depositing beams pass through openings in the vapor-depositing mask, and the organic EL material is vapor-deposited in a predetermined region on the surface of the substrate. The vapor-depositing beams are guided through a plurality of vapor-depositing beam passing pipes provided in the vapor-depositing beam generator. Alternatively, the vapor-depositing beams generated by the vapor-depositing beam generator are guided through a vapor-depositing beam direction adjusting board having a plurality of vapor-depositing beam passing holes. This enhances directional uniformity of the vapor-depositing beams, thereby enabling making each film thickness of organic EL material layers uniform and thus enhancing precision of forming patterns of the layers.

The present invention relates to a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing surface. The substrate holding apparatus comprises a top ring body for holding a substrate, an elastic pad for being brought into contact with the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further comprises a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for being brought into contact with the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus further comprises a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber.

The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

A display device includes an array of light emitting cells. Banks define each of the light emitting cells. The light emitting cells include a first light emitting cell that is located in a central region of the array and a second light emitting cell that is located in a peripheral region of the array. First and third banks border the first light emitting cell with the first bank being closer to a periphery of the array than the second bank. Second and fourth banks border the second light emitting cell with the third bank being closer to the periphery of the array than the fourth bank. An inclination angle of an innermost sidewall of the third bank that is adjacent the second light emitting cell is different than an inclination angle of an innermost sidewall of the first bank that is adjacent the first light emitting cell.

Disclosed is an organic EL display panel with an organic light emitting layer of a uniform film thickness. The organic EL display panel comprises a substrate, a line-shaped bank that is arranged on the substrate and defines line-shaped regions on the substrate, and two or more organic EL elements arranged in a row in each of the line-shaped regions. Each of the organic EL elements includes an anode arranged on the substrate, a hole injection layer arranged on the anode and comprised of a metal oxide, an organic light emitting layer arranged on the hole injection layer, and a cathode arranged on the organic light emitting layer. The hole injection layer is formed in a concave or convex shape, a part of the hole injection layer is arranged below the bank, and the organic light emitting layeris formed by coating the line-shaped regions with an organic light emitting material.

The invention provides a self-cleaning super-hydrophilic thin film and a preparation method thereof. The preparation method comprises the steps of using tetra-n-butyl titanate as a precursor of TiO2, using anhydrous ethyl alcohol as solvent, adding glacial acetic acid, and magnetically agitating at room temperature to obtain solution A; synchronously, taking distilled water and anhydrous ethyl alcohol, adding doping salts, and magnetically agitating the mixture to obtain solution B; slowly adding the solution B to the solution A, adding hydrochloric acid to adjust pH value to 3-5, agitating to obtain TiO2 sol, and preparing a rare-earth-doped nanometer-sized TiO2 thin film by using a film drawing machine; immersing a substrate into the sol, drawing and plating a film after glass sheet and liquid surface are stable; drying after plating a layer of film and cooling at room temperature; repeating the steps to prepare the rare earth-doped nanometer-sized TiO2 thin film with different layers; thermally treating the base plated with the TiO2 thin film, and directly using the film-plated base. The thin film of the invention overcomes the weak points that nanometer-sized powder easily aggregates and is not easily recovered, the obtained crystal form is table, and the thin film has excellent self-cleaning and hydrophilic capacities.

A bank for defining the regions in which pixels are formed has a stacked structure including: a base layer on the low level which also serves as an interlayer insulating film between the pixel forming regions; a middle bank layer on the middle level which serves to improve the fixation of an organic compound material (i.e., improve the uniformity of the film thickness of a positive hole transporting layer and an electron-transporting light emitting layer) in forming an organic EL layer; and a bank metal layer on the upper level which is made of a conductive material and serves also as a common voltage line (cathode line).

The present invention provides a color film substrate, a manufacturing method thereof, and an OLED display device. The color film substrate is provided with a first black matrix (12) and a second black matrix (14) to block light together, and the risk of color mixing of display can be reduced. A first groove (121) of the first black matrix (12) and a second groove (131) of a dam layer (13) are setto contain and limit printing ink needed for the manufacture of a color-resist layer (15) together, the surface of the first groove (121) is hydrophilic, the surface of the second groove (131) is hydrophobic, the flatness and thickness uniformity of the color-resist layer 15 can be improved, the color film substrate is applied to the OLED display device, and the display quality can be improved. The dam layer (13) and the second black matrix (14) are set to substitute support posts in the prior art, and the process can be simplified.

A crucible is a monolithic structure extending over an entire area of a vaporizing chamber and has at least one slit groove provided in the upper surface thereof. The at least one slit groove has a length from one end of the upper surface of the crucible to other end thereof. The at least one slit groove is used as a portion for containing the evaporation material (dopant material or the like). Alternatively, a crucible is a monolithic structure extending over the entire area of the vaporizing chamber and has a plurality of holes provided in the upper surface thereof. The holes are used as portions for containing the evaporation material. Further, the crucible is divided into a plurality of regions, and individual electric heaters are provided under the lower surface of the crucible for the respective regions, whereby temperature can be individually controlled for the respective regions by the electric heaters.

There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.

A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminium nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminium nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminium nitride film is formed firstly and/or lastly.

The invention provides a coating apparatus and a coating method. When a front end of a substrate G approaches a set position (start position for coating) near an area just below a resist nozzle (78), transferring of the substrate is stopped for a second inspection. An optical distance sensor (162) measures distances (Ld, Le) above and below the substrate G. Then, measured values of thickness D of the substrate and floating height Hb are compared to their set values or fiducial values [D] and [Hb]. If absolute values of [D]-D and [Hb]-Hb are within the preset range, 'normal' is obtained, other wise 'abnormal' is obtained. Thus the time for coating the substrate with a treating solution through non-revolving coating method with floating-transferring manner is shortened, the position relationship for heights of a floating table, the substrate and the nozzle is properly managed, and a coating film of the treating solution can be formed with uniform film thickness on the substrate.

A piezoelectric sounding body in which a stable high sound pressure can be obtained over a wide frequency band. The piezoelectric sounding body includes a resin film, a piezoelectric vibrating plate attached to the center of one surface of the resin film with a tackiness layer, and a case supporting the periphery of the resin film. The piezoelectric vibrating plate is formed in a rectangular shape. An adhesive is applied between the middle of each long side of the piezoelectric vibrating plate and the resin film, along each long side of the piezoelectric vibrating plate. The separation between the piezoelectric vibrating plate and the tackiness layer can be prevented during sounding, and a stable sound pressure can be obtained for a prolonged period.