Alumina particles and polishing composition containing the same
A technology of alumina particles and polishing compositions, applied in the field of polishing compositions, can solve the problems of reduced polishing rate of substrates, difficulty in removing alumina particles, decreased ease and the like
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example 1 to 17 and comparative example 1 to 6
[0056] In Examples 1 to 17 and Comparative Examples 1 to 5, aluminum compound particles represented by "A" to "P" in Table 1 were mixed with water and aluminum nitrate nonahydrate or aluminum chloride hexahydrate (polishing accelerator), Tetrasodium glutamic acid diacetate (cleaning accelerator) and hydrogen peroxide (oxidizing agent) were mixed to prepare a polishing composition. In Comparative Example 6, aluminum nitrate nonahydrate, tetrasodium glutamate diacetate, and hydrogen peroxide were mixed with water to prepare a polishing composition. The types and contents of aluminum compound particles contained in the polishing compositions of Examples and Comparative Examples and the types and contents of polishing accelerators are shown in Table 2 under the titles "Types of Aluminum Compound Particles", "Content of Aluminum Compound Particles" and "Aluminum Compound Particles". content", "type of polishing accelerator", and "content of polishing accelerator". In addition, in ...
example 21 to 24 and comparative example 21 and 22
[0070] A polishing composition was prepared by mixing any aluminum compound particles represented by "A", "B", "D", "Q", "S", and "T" in Table 1 with water. Table 4 shows the types and contents of aluminum compound particles contained in the polishing compositions of Examples and Comparative Examples and the pH values of the polishing compositions of Examples and Comparative Examples.
[0071] The surface of the acrylic resin substrate for the display panel was polished under the conditions shown in Table 5 using the polishing composition of each example and comparative example. The polishing rate was determined based on the difference in substrate weight before and after polishing. The results are shown in Table 4 in the column entitled "Polishing Rate".
[0072] The substrates polished with the polishing compositions of the respective examples and comparative examples were washed with pure water. Subsequently, the arithmetic mean roughness Ra of the substrate surface aft...
example 31 and 32 and comparative example 31
[0080] The aluminum compound particles represented by "A" and "R" in Table 1 were mixed with water and hydrochloric acid (polishing accelerator), potassium chloride (polishing accelerator), and hydrogen peroxide (oxidizing agent) to prepare a polishing composition things. Table 6 shows the types and contents of the aluminum compound particles contained in the polishing compositions of the respective examples and comparative examples, and the pH values of the polishing compositions of the respective examples and comparative examples. In addition, for each polishing composition, the hydrochloric acid content, potassium chloride content, and hydrogen peroxide content in the polishing compositions of the respective examples and comparative examples were 1.2 g / L, 18.8 g / L, and 34.2 g / L, respectively.
[0081] Using the polishing composition of each example and comparative example, the surface of the semiconductor device substrate dotted with pads composed of palladium having a si...
PUM
Property | Measurement | Unit |
---|---|---|
particle diameter | aaaaa | aaaaa |
conversion efficiency | aaaaa | aaaaa |
conversion efficiency | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com