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Chemical and mechanical polishing liquid

A chemical machinery, polishing liquid technology, applied in grinding/polishing equipment, polishing compositions containing abrasives, machine tools suitable for grinding workpiece edges, etc., can solve the problems of high polishing rate, pitting, corrosion, etc., Achieve the effect of expanding the process parameter window, improving the level of planarization, and optimizing the polishing rate

Active Publication Date: 2012-02-29
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In typical chemical mechanical polishing of metals, defect levels are often high, especially if pitting, edge erosion, corrosion, etc. are present
Moreover, the polishing rate is also high, and the damage to the metal surface is relatively large, and problems such as scratches and rough surfaces are prone to occur.

Method used

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  • Chemical and mechanical polishing liquid
  • Chemical and mechanical polishing liquid
  • Chemical and mechanical polishing liquid

Examples

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Comparison scheme
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Embodiment 1

[0044] Example 2

Embodiment 2

[0046] Example 3

Embodiment 3

[0048] Example 4

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PUM

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Abstract

The present invention discloses a kind of chemical and mechanical polishing fluid, which includes at least one kind of grinding grain, one kind of chemical additive and one kind of carrier, where the chemical additive is polycarboxylic acid and / or its salt. The chemical and mechanical polishing fluid can raise the flatness of the polished metal surface, lower the metal polishing rate obviously, optimize the dielectric polishing rate and expand technological parameter window.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] With the development of microelectronics technology, the integration level of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires nearly a hundred processes in the microelectronics process, especially multi-layer wiring, lining The bottom and medium must be chemically mechanically globally planarized, and chemical mechanical polishing (CMP) has been proven to be the best planarization method. [0003] In chemical mechanical polishing methods, the polished surface of a substrate is brought into direct contact with a rotating polishing pad while pressure is applied to the backside of the substrate. During polishing, the polishing pad rotates with the operating table while maintaining a downward force on the back of the substrate, and a liquid composed of abrasives an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08J5/14B24B9/04
CPCC09G1/02H01L21/3212
Inventor 杨春晓俞昌肖正龙荆建芬
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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