Chemical mechanical polishing of copper-oxide damascene structures

A technology of chemical machinery and polishing slurry, which is applied in the direction of grinding/polishing equipment, grinding machine tools, and parts of grinding machine tools, etc. It can solve the basic principles of geometry and material properties, unclear friction mechanism, depression, etc. question

Inactive Publication Date: 2005-05-25
ASML US LLC +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

One problem with this phenomenological model is that the correlation between polishing rate and pattern geometry varies with pattern design, so the friction mechanism for planarization in this model is unclear
Although several semi-empirical models have been proposed, the fundamentals of dishing and overthrowing and their relationship to pattern

Method used

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  • Chemical mechanical polishing of copper-oxide damascene structures
  • Chemical mechanical polishing of copper-oxide damascene structures
  • Chemical mechanical polishing of copper-oxide damascene structures

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Embodiment Construction

[0052] In all descriptions of the present invention, the following symbolic terms are used, and these terms are defined as follows:

[0053] A f = area fraction of metal pattern

[0054] a = half of the line width of the metal pattern (m)

[0055] C 1 、C 2 、C 3 = integral constant

[0056] E = Young's modulus of cladding material (N / m 2 )

[0057] f n , F = normal force and tangential force on the wafer (N)

[0058] H = Hardness of cladding material (N / m 2 )

[0059] H' = apparent hardness of composite surface (N / m 2 )

[0060] h = thickness of material removed from wafer surface (m)

[0061] k n = Preston constant (m 2 / N)

[0062] k w = wear coefficient

[0063] P = load per unit length on high parts (N / m)

[0064] p = normal pulling force on the wafer surface (N / m 2 )

[0065] p av = Nominal pressure on wafer (N / m 2 )

[0066] p'=average pressure on high parts (N / m 2 )

[0067] q = tangential pulling force on the wafer surface (N / m 2 )

[0068] r...

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Abstract

The present invention provides a method for chemical mechanical polishing of a metallic damascene structure comprising: an insulating layer having grooves on a wafer; and a metal layer having a lower portion and a metal layer positioned within the grooves of the insulating layer Covering the lower part and the upper part of the insulating layer. The method includes: a first step of planarizing the upper portion of the metal layer; and a second step of polishing the insulating layer and the lower portion of the metal layer. In a first step, the wafer and the polishing pad are loaded together in contact mode by applying a pressure p between the wafer and the polishing pad and creating a relative velocity v to increase the metal removal rate. In a second step, in a steady state mode, the lower portions of the insulating and metal layers are polished to form individual metal lines in the grooves with minimal dishing of the metal lines and overpolishing of the insulating layer.

Description

[0001] This application claims priority to US Provisional Patent Application No. 60 / 263,813, filed January 23, 2001, the entire disclosure of which application is hereby incorporated by reference. technical field [0002] The present invention relates generally to chemical mechanical polishing (CMP) in semiconductor manufacturing. More specifically, the present invention relates to CMP of copper-oxide damascene structures to increase material removal rates and reduce copper dishing and oxide overpolishing. Background technique [0003] Continued advances in very large scale integration (ULSI) of semiconductor devices require the design and fabrication of very small devices. The metallization pattern technology for interconnection (interconnect) in the prior art is not enough to cope with the new type of integrated circuit (IC). According to calculations, for a CMOS circuit with a gate size smaller than 0.25 μm, the resistance-capacitance (RC) delay caused by the metallizati...

Claims

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Application Information

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IPC IPC(8): B24B37/04B24B49/16H01L21/304H01L21/3205H01L21/321
CPCB24B37/042B24B49/006B24B49/16H01L21/3212H01L21/304
Inventor 南纳吉·萨卡赖俊宇希拉里奥·L·奥
Owner ASML US LLC
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