Chemical-mechanical polishing solution
A chemical mechanical and polishing liquid technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of limited removal rate and micro-scratches on the original surface of the wafer, achieve good smoothness and flatness, and solve the problem of micro-scratches , solve the effect of limited removal rate
Inactive Publication Date: 2010-06-23
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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- Abstract
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Problems solved by technology
[0003] The technical problem to be solved by the present invention is to overcome the defects that the existing chemical mechanical polishing liquid containing traditional spherical monodisperse silica sol particles or powdery silicon oxide abrasives has a limited removal rate or easily causes micro-scratches on the original surface of the wafer, and provides A chemical mechanical polishing fluid with high removal rate and good surface finish and flatness after polishing
Method used
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Embodiment 1～11
[0022] Table 1 has provided the formula of chemical mechanical polishing liquid embodiment 1~11 of the present invention, by the component listed in table 1 and content thereof, percentage is mass percentage and simply mixes evenly, and supplements polishing liquid content with deionized water to The mass percentage is 100%, and then the pH of the polishing liquid is adjusted to the listed value with a pH regulator to obtain various chemical mechanical polishing liquids.
[0023]
[0024]
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[0026]
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Abstract
The invention discloses chemical-mechanical polishing solution, which has good effect on polishing dielectric materials and higher rate of removing dielectric materials and simultaneously contains dimer dumbbell shaped and/or poly chain shaped silica sol ground particles. The particles have regular shapes. The wafer after polishing has better surface finish and flatness and can meet the requirements for the surfaces of the dielectric materials under various technological conditions.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] Abrasive particles of polishing fluid in chemical mechanical planarization (CMP) technology are one of the key components, and different abrasive particles have different effects. Among the factors affecting polishing performance, abrasive particles often play a decisive role. Its performance includes various indicators, such as particle size distribution, shape, aggregation state and solid content in polishing liquid of abrasive particles. The surface roughness of the wafer, the surface contaminant particles, and the removal rate of various materials will have different effects. Traditional abrasive silica sol particles are spherical particles and are monodisperse (single polymerization, see attached figure 1 ), the removal rate of various materials, especially dielectric materials, is limited, and the only way to speed up the removal is to increase the co...
Claims
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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 宋伟红姚颖
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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